Untitled
Abstract: No abstract text available
Text: STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current • VCE sat = 1.55 V (typ.) @ IC = 30 A
|
Original
|
STGW30H65FB,
STGWT30H65FB
O-247
DocID025849
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current 3 2 • VCE sat = 1.55 V (typ.) @ IC = 30 A
|
Original
|
STGFW30H65FB,
STGW30H65FB,
STGWT30H65FB
O-247
DocID025849
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current 3 2 • VCE sat = 1.55 V (typ.) @ IC = 30 A
|
Original
|
STGFW30H65FB,
STGW30H65FB,
STGWT30H65FB
O-247
DocID025849
|
PDF
|