Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DOUBLE SILICON NPN PHOTOTRANSISTOR Search Results

    DOUBLE SILICON NPN PHOTOTRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    DOUBLE SILICON NPN PHOTOTRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MIT-4A11B

    Abstract: IR phototransistor
    Text: SUBMINIATURE PHOTOINTERRUPTER MIT-4A11B Description The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter. Package Dimensions


    Original     		MIT-4A11B MIT-4A11B IR phototransistor PDF

    OIER2

    Abstract: double Phototransistor
    Text: OIER2 Reflective sensor _ General Description The OIER2 reflective sensor consists in a red emitting diode and a double NPN silicon phototransistor. The components together are mounted side by side in a plastic black SMD housing. The black package avoids


    Original     		PDF

    OIER3

    Abstract: reflective sensor 4 pin
    Text: OIER3 Reflective sensor _ General Description The OIER3 reflective sensor consists in an infrared emitting diode and a double NPN silicon phototransistor. The components together are mounted side by side in a plastic black SMD housing. The black package avoids


    Original     		PDF

    NTE3086

    Abstract: No abstract text available
    Text: NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability.


    Original     		NTE3086 NTE3086 100mW PDF

    Untitled

    Abstract: No abstract text available
    Text:  !" Reflective sensor EEEEEEEEEEEEEEEECFCA93298C The OIER3 reflective sensor consists in an infrared emitting diode and a double NPN silicon phototransistor. The components together are mounted side by side in a plastic black SMD housing. The black package avoids


    Original     		12234556667832897A8B5C PDF

    Untitled

    Abstract: No abstract text available
    Text:  !" Reflective sensor EEEEEEEEEEEEEEEECFCA93298C The OIER2 reflective sensor consists in a red emitting diode and a double NPN silicon phototransistor. The components together are mounted side by side in a plastic black SMD housing. The black package avoids


    Original     		12234556667832897A8B5C PDF

    Untitled

    Abstract: No abstract text available
    Text: Clairex Technologies, Incorporated ® CLT335 PRELIMINARY DATA NPN Silicon Phototransistor December, 1997 features • • absolute maximum ratings Ta=25°C unless otherwise stated. 12° acceptance angle custom aspheric lensed TO-18 package transistor base is not bonded


    OCR Scan     		CLT335 850nm 250mW 100pA 850nm. 21427T? PDF

    double Silicon NPN Phototransistor

    Abstract: TO-18 TRANSISTOR glass lens phototransistor led 5mm texas transistor t05 CLE435 CLT435 NPN Silicon Phototransistor
    Text: CLT435 PRELIMINARY DATA Clairex* Technologies, incorporated NPN Silicon Phototransistor December, 1997 features • • absolute maximum ratings Ta=25°C unless otherwise stated. 12° acceptance angle custom aspheric lensed TO-18 transistor base is not bonded


    OCR Scan     		CLT435 660nm 100MA 660nm 000113t) double Silicon NPN Phototransistor TO-18 TRANSISTOR glass lens phototransistor led 5mm texas transistor t05 CLE435 NPN Silicon Phototransistor PDF

    phototransistor, 850nm

    Abstract: double Silicon NPN Phototransistor CLT335 TO-18Package
    Text: Clairex Technologies, Incorporated CLT335 PRELIMINARY DATA NPN Silicon Phototransistor features • • • • absolute maximum ratings Ta=25°C unless otherwise stated. 12° acceptance angle custom aspheric lensed TO-18 package transistor base is not bonded


    OCR Scan     		CLT335 850nm CLT335 CLE335IRED. 850nm. phototransistor, 850nm double Silicon NPN Phototransistor TO-18Package PDF

    Untitled

    Abstract: No abstract text available
    Text: CLT435 PRELIMINARY DATA NPN Silicon Phototransistor Clairex® Technologies, Incorporated December, 1997 features • • absolute maximum ratings Ta=25°C unless otherwise stated. 12° acceptance angle custom aspheric lensedTO -18 package transistor base is not bonded


    OCR Scan     		CLT435 660nm 100pA 660nm PDF

    CLE335

    Abstract: CLT335 double Silicon NPN Phototransistor phototransistor, 850nm
    Text: Clairex CLT335  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.025 (0.64)


    Original     		CLT335 850nm. CLE335 CLT335 double Silicon NPN Phototransistor phototransistor, 850nm PDF

    double Silicon NPN Phototransistor

    Abstract: CLE135 CLT135
    Text: Clairex CLT135  Technologies, Inc. NPN Silicon Phototransistor July, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.025 (0.64)


    Original     		CLT135 940nm double Silicon NPN Phototransistor CLE135 CLT135 PDF

    660nm 250mw

    Abstract: CLE435 CLT435 double Silicon NPN Phototransistor
    Text: CLT435 Clairex  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.190 4.83 0.176 (4.47) 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.060 (1.52) max


    Original     		CLT435 660nm. 660nm 250mw CLE435 CLT435 double Silicon NPN Phototransistor PDF

    Clairex

    Abstract: Aspheric Lens convex lens CLE335 CLT335 phototransistor, 850nm source LED 850nm LED 850nm TO-18
    Text: Clairex CLT335  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) N/C BASE EMITTER 0.100 (2.54) dia 0.025 (0.64)


    Original     		CLT335 850nm. Clairex Aspheric Lens convex lens CLE335 CLT335 phototransistor, 850nm source LED 850nm LED 850nm TO-18 PDF

    Untitled

    Abstract: No abstract text available
    Text: CLT335  Clairex Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.025 (0.64)


    Original     		CLT335 850nm. PDF

    660nm 250mw

    Abstract: CLE435 CLT435
    Text: CLT435 Clairex  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.190 4.83 0.176 (4.47) 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.060 (1.52)


    Original     		CLT435 660nm. 660nm 250mw CLE435 CLT435 PDF

    Untitled

    Abstract: No abstract text available
    Text: CLT435 Clairex  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.190 4.83 0.176 (4.47) 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.060 (1.52) max


    Original     		CLT435 660nm. PDF

    CLE335

    Abstract: CLT335
    Text: Clairex CLT335  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.025 (0.64) max


    Original     		CLT335 850nm. CLE335 CLT335 PDF

    Untitled

    Abstract: No abstract text available
    Text: CLT130,CLT131,CLT132,CLT133 NPN Silicon Phototransistors Technologies, Inc. CLT130, CLT131, CLT132 and CLT133 are exact replacements for obsolete part numbers CLT2130, CLT2140, CLT2150 and CLT2160. 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 


    Original     		CLT130 CLT131 CLT132 CLT133 CLT130, CLT131, CLT133 CLT2130, CLT2140, PDF

    CLT2160

    Abstract: CLT130 CLT131 CLT132 CLT133 CLT2130 CLT2140 CLT2150
    Text: CLT130/CLT131/CLT132/CLT133 NPN Silicon Phototransistors Clairex  Technologies, Inc. CLT130, CLT131, CLT132 and CLT133 are exact replacements for obsolete part numbers CLT2130, CLT2140, CLT2150 and CLT2160. 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47)


    Original     		CLT130/CLT131/CLT132/CLT133 CLT130, CLT131, CLT132 CLT133 CLT2130, CLT2140, CLT2150 CLT2160. CLT130 CLT2160 CLT130 CLT131 CLT2130 CLT2140 PDF

    CLE135

    Abstract: CLT135
    Text: Clairex CLT135/CLT135A  Technologies, Inc. NPN Silicon Phototransistors July, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.025 (0.64)


    Original     		CLT135/CLT135A 940nm CLT135A CLT135 CLE135 940nm. CLT135 PDF

    CLT2160

    Abstract: CLT2140 CLT2150 CLE130 CLT130 CLT131 CLT132 CLT133 CLT2130
    Text: CLT130,CLT131,CLT132,CLT133 NPN Silicon Phototransistors 0.210 5.33 0.190 (4.83)  Technologies, Inc. CLT130, CLT131, CLT132 and CLT133 are exact replacements for obsolete part numbers CLT2130, CLT2140, CLT2150 and CLT2160. 0.190 (4.83) 0.176 (4.47)


    Original     		CLT130 CLT131 CLT132 CLT133 CLT130, CLT131, CLT133 CLT2130, CLT2140, CLT2160 CLT2140 CLT2150 CLE130 CLT2130 PDF

    CLT2160

    Abstract: CLT130 CLT131 CLT132 CLT133 CLT2130 CLT2140 CLT2150
    Text: CLT130,CLT131,CLT132,CLT133 NPN Silicon Phototransistors 0.210 5.33 0.190 (4.83)  Technologies, Inc. CLT130, CLT131, CLT132 and CLT133 are exact replacements for obsolete part numbers CLT2130, CLT2140, CLT2150 and CLT2160. 0.190 (4.83) 0.176 (4.47)


    Original     		CLT130 CLT131 CLT132 CLT133 CLT130, CLT131, CLT133 CLT2130, CLT2140, CLT2160 CLT2130 CLT2140 CLT2150 PDF

    double Silicon NPN Phototransistor

    Abstract: phototransistor npn se2460 SD2440 SE2470 sd244
    Text: SD2440 Silicon Phototransistor FEATURES • Miniature, hermetically sealed, pill style, metal can package • 48¡ acceptance angle • Wide operating temperature range - 55¡C to +125¡C • Ideal for direct mounting to printed circuit boards • Wide sensitivity ranges


    Original     		SD2440 SE2460 SE2470 SD2440 double Silicon NPN Phototransistor phototransistor npn se2460 sd244 PDF