Untitled
Abstract: No abstract text available
Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030S • Switching Application
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DP030S
-100mA/-10mA)
DN030S
DP030S
OT-23F
KST-2108-000
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DN030S
Abstract: DP030S N01 MARKING CODE marking N01
Text: DN030S NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030S • Switching Application PIN Connection
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DN030S
100mA/10mA)
DP030S
OT-23F
KSD-T5C008-000
DN030S
DP030S
N01 MARKING CODE
marking N01
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N01 marking
Abstract: T 2109 DN030S DP030S
Text: DN030S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030S • Switching Application
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PDF
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DN030S
100mA/10mA)
DP030S
OT-23F
KST-2109-000
100mA
300mA
100mA,
N01 marking
T 2109
DN030S
DP030S
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Untitled
Abstract: No abstract text available
Text: DP030S Semiconductor PNP Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = - 0.15V Typ. @IC / I B = - 100m A/ - 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DN030S
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PDF
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DP030S
DN030S
KST-2108-000
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DN030S
Abstract: DP030S kst21 kst210
Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030S • Switching Application
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Original
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PDF
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DP030S
-100mA/-10mA)
DN030S
OT-23F
KST-2108-000
-300mA
-100mA,
-10mA
DN030S
DP030S
kst21
kst210
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DN030S
Abstract: DP030S
Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN030S
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Original
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PDF
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DP030S
-100mA/-10mA)
DN030S
OT-23F
KST-2108-000
-300mA
-100mA,
-10mA
DN030S
DP030S
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Untitled
Abstract: No abstract text available
Text: DN030S NPN Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = 0.1V Typ. @I C/ I B= 100m A/ 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DP030S • Swit ching Applicat ion
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Original
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PDF
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DN030S
DP030S
KSD-T5C008-000
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