PC 13001 TRANSISTOR
Abstract: IC PC 124 STD123S STA124S
Text: STA124S Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STD123S Ordering Information Type NO. Marking STA124S Package Code 124
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STA124S
STD123S
OT-23
KST-2100-000
-100mA
-500mA,
-50mA
PC 13001 TRANSISTOR
IC PC 124
STD123S
STA124S
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FET MARKING CODE
Abstract: STK596SF capacitor Microphones kst21 marking kst
Text: STK596SF Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information
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STK596SF
OT-23F
KST-2128-001
FET MARKING CODE
STK596SF
capacitor Microphones
kst21
marking kst
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k602
Abstract: K-602 STK0602 kst21
Text: STK0602 Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • Include Zener protection for ESD ruggedness. Ordering Information
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STK0602
OT-23
KST-2136-000
k602
K-602
STK0602
kst21
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Untitled
Abstract: No abstract text available
Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030S • Switching Application
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DP030S
-100mA/-10mA)
DN030S
DP030S
OT-23F
KST-2108-000
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DP200F
Abstract: DN200F kst21
Text: DN200F Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.2V Typ. @IC/IB=1A/50 ㎃) • Suitable for low voltage large current drivers • Complementary pair with DP200F • Switching Application
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DN200F
DP200F
OT-89
KST-2125-002
DP200F
DN200F
kst21
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STK7002A
Abstract: No abstract text available
Text: STK7002A Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information
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STK7002A
OT-23
KST-2106-001
STK7002A
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N01 marking
Abstract: T 2109 DN030S DP030S
Text: DN030S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030S • Switching Application
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DN030S
100mA/10mA)
DP030S
OT-23F
KST-2109-000
100mA
300mA
100mA,
N01 marking
T 2109
DN030S
DP030S
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STC918SF
Abstract: kst tuner kst21
Text: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA
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STC918SF
29dBm
OT-23F
KST-2107-000
STC918SF
kst tuner
kst21
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transistor marking p02
Abstract: DN050S DP050S CODE P02
Text: DP050S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.08V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN050S • Switching Application
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DP050S
-100mA/-10mA)
DN050S
OT-23F
KST-2116-000
-100mA
-500mA
-100mA,
transistor marking p02
DN050S
DP050S
CODE P02
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Untitled
Abstract: No abstract text available
Text: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA
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STC918SF
29dBm
OT-23F
KST-2107-000
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Untitled
Abstract: No abstract text available
Text: DP030S Semiconductor PNP Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = - 0.15V Typ. @IC / I B = - 100m A/ - 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DN030S
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DP030S
DN030S
KST-2108-000
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transistor Marking code n03
Abstract: ic n03 DN100S DP100S marking N03 marking code N03
Text: DN100S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.15V Typ. @IC /IB =400mA/20mA) • Suitable for low voltage large current drivers • Complementary pair with DP100S • Switching Application
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DN100S
400mA/20mA)
DP100S
OT-23F
KST-2117-000
100mA
400mA,
transistor Marking code n03
ic n03
DN100S
DP100S
marking N03
marking code N03
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STA124SF
Abstract: Transistor STD123SF kst21
Text: STA124SF Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STD123SF Ordering Information Type NO. Marking STA124SF Package Code
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STA124SF
STD123SF
OT-23F
KST-2124-001
STA124SF
Transistor
STD123SF
kst21
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kst21
Abstract: STK1828SF
Text: STK1828SF Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • 2.5V Gate drive. • Low threshold voltage : Vth = 0.5~1.5V. • High speed. Ordering Information Type NO.
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STK1828SF
OT-23F
KST-2123-000
kst21
STK1828SF
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SOT-23 k702
Abstract: k702 2105 STK7002 k702 mosfet
Text: STK7002 Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information
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STK7002
OT-23
KST-2105-004
SOT-23 k702
k702
2105
STK7002
k702 mosfet
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DN100S
Abstract: DP100S p03 transistor p03 transistor 3 pin IC 2901
Text: DP100S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.25V Typ. @IC /IB =-400mA/-20mA) • Suitable for low voltage large current drivers • Complementary pair with DN100S • Switching Application
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DP100S
-400mA/-20mA)
DN100S
OT-23F
KST-2118-000
-100mA
-400mA,
-20mA
DN100S
DP100S
p03 transistor
p03 transistor 3 pin
IC 2901
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N02 Transistor
Abstract: N02 npn DN050S DP050S N02 MARKING N02
Text: DN050S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050S • Switching Application.
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DN050S
100mA/10mA)
DP050S
OT-23F
KST-2115-000
100mA
500mA
100mA,
N02 Transistor
N02 npn
DN050S
DP050S
N02 MARKING N02
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K702
Abstract: STK7002F kst21 213800-1 k702 mosfet
Text: STK7002F Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information
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STK7002F
OT-23F
KST-2138-001
K702
STK7002F
kst21
213800-1
k702 mosfet
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DN030S
Abstract: DP030S kst21 kst210
Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030S • Switching Application
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DP030S
-100mA/-10mA)
DN030S
OT-23F
KST-2108-000
-300mA
-100mA,
-10mA
DN030S
DP030S
kst21
kst210
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STJ828SF
Abstract: No abstract text available
Text: STJ828SF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch applications. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.
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STJ828SF
OT-23F
KST-2125-000
-10mA
STJ828SF
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Untitled
Abstract: No abstract text available
Text: DP100S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.25V Typ. @IC/IB=-400mA/-20mA) • Suitable for low voltage large current drivers • Complementary pair with DN100S • Switching Application
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DP100S
-400mA/-20mA)
DN100S
DP100S
OT-23F
KST-2118-000
KST-2118-000
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DN030S
Abstract: DP030S
Text: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN030S
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DP030S
-100mA/-10mA)
DN030S
OT-23F
KST-2108-000
-300mA
-100mA,
-10mA
DN030S
DP030S
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k702
Abstract: SOT-23 k702 2105 k702 mosfet marking 2105 STK7002 kst21 marking K702
Text: STK7002 Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information
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STK7002
OT-23
KST-2105-003
k702
SOT-23 k702
2105
k702 mosfet
marking 2105
STK7002
kst21
marking K702
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DN200F
Abstract: DP200F
Text: DN200F Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.3V Typ. @IC /IB =1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200F • Switching Application
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DN200F
A/50mA)
DP200F
OT-89
KST-2125-000
100mA
DN200F
DP200F
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