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    DPAK 451 Search Results

    DPAK 451 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation

    DPAK 451 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU108

    Abstract: BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •


    Original     		PDF TIP47, TIP50 MJD47* MJD50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 BU326 BU100

    2Sd331 npn transistor

    Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


    Original     		PDF 2N6040 2N6045 TIP120 TIP122 TIP125 TIP127 MJD122* MJD127* TIP73B TIP74 2Sd331 npn transistor 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326

    DPAK 451

    Abstract: MJD340
    Text: MJD340 NPN MJD350 (PNP) Preferred Device High Voltage Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. SILICON POWER TRANSISTORS


    Original     		PDF MJD340 MJD350 MJE340 MJE350 DPAK 451 MJD340

    BC 458

    Abstract: 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD31,C* PNP MJD32,C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • SILICON


    Original     		PDF MJD31 MJD32 TIP31 TIP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BC 458 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161

    TIP41 TRANSISTOR REPLACEMENT

    Abstract: TIP42 338 npn dpak BU326 TIP42 amplifier BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD41C* PNP MJD42C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • • SILICON


    Original     		PDF MJD41C* MJD42C* TIP41 TIP42 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP41 TRANSISTOR REPLACEMENT TIP42 338 npn dpak BU326 TIP42 amplifier BU108 BU100

    MJ15003 300 watts amplifier

    Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications


    Original     		PDF MJE340 MJE350 MJD340* MJD350* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15003 300 watts amplifier ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419

    Untitled

    Abstract: No abstract text available
    Text: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N40E r14525 MTD2N40E/D

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033

    2N40E

    Abstract: 2N40* Central AN569 MTD2N40E MTD2N40ET4 SMD310
    Text: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N40E r14525 MTD2N40E/D 2N40E 2N40* Central AN569 MTD2N40E MTD2N40ET4 SMD310

    2N40E

    Abstract: t2n40e
    Text: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N40E MTD2N40E/D 2N40E t2n40e

    ST T4 3580

    Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714

    MJE3055 to247

    Abstract: Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 PNP MJD3055 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix


    Original     		PDF MJD2955 MJD3055 MJE2955 MJE3055 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJE3055 to247 Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100

    Untitled

    Abstract: No abstract text available
    Text: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 1 High ruggedness electronic ignition for small


    Original     		PDF ST901T STD901T O-220

    mje15033 replacement

    Abstract: BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 PNP MJD6039 Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.


    Original     		PDF 2N6034 2N6039 MJD6036 MJD6039 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144

    ic 4510

    Abstract: ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060
    Text: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 3 1 High ruggedness electronic ignition for small


    Original     		PDF ST901T STD901T O-220 ic 4510 ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060

    equivalent transistor K 3562

    Abstract: 724 motorola NPN Transistor with heat pad MJE340 MOTOROLA 2N3055 BU108 transistor bd136 in dpak packaging 2sc15 724 motorola NPN Transistor with collector heat pad 2SD436 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD112* PNP MJD117* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.


    Original     		PDF TIP110 TIP117 MJD112* MJD117* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A equivalent transistor K 3562 724 motorola NPN Transistor with heat pad MJE340 MOTOROLA 2N3055 BU108 transistor bd136 in dpak packaging 2sc15 724 motorola NPN Transistor with collector heat pad 2SD436 BU326

    55L104

    Abstract: NTD3055L104T4G NTD3055L104G 451 MOSFET
    Text: NTD3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • • • • • • Pb−Free Packages are Available


    Original     		PDF NTD3055L104 tpv10 55L104 NTD3055L104T4G NTD3055L104G 451 MOSFET

    MTD2N40E

    Abstract: AN569 SMD310
    Text: MOTOROLA Order this document by MTD2N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET DPAK for Surface Mount Designer's MTD2N40E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.5 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTD2N40E/D MTD2N40E MTD2N40E/D* MTD2N40E AN569 SMD310

    MFW 17 SOT23

    Abstract: MFW SOT23 MFW 17 Transistor mfw 17 369A-13 AN569 MTD2N40E MFW diode MFW SOT mfw sot-23
    Text: MOTOROLA SEMICONDUCTOR w TECHNICAL Order this document by MTD2N40WD DATA Designer5TM Data Sheet TMOS E-FET TM . . High Energy Power FET DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche and switch efficiently. This


    Original     		PDF MTD2N40WD 2W609 MFW 17 SOT23 MFW SOT23 MFW 17 Transistor mfw 17 369A-13 AN569 MTD2N40E MFW diode MFW SOT mfw sot-23

    AVALANCHE TRANSISTOR 2n

    Abstract: fet dpak
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T D 2N 40E TM O S E-FET™ High E nergy P o w er FET DPAK for S u rfa c e M ount M otorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.5 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTD2N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2N40E T M O S E -F E T ™ High Energy Pow er FET DPAK for S u rfa ce Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTD2N40E/D TD2N40E

    4511 MOSFET

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T D 5N 25E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred D evk:* TM OS POWER FET 5.0 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate This adva n c ed T M O S E - F E T is designed to withstand high


    OCR Scan     		PDF MTD5N25E 4511 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD5P06V TMOS V ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TM O S PO W ER FET P-Channel Enhancement-Mode Silicon Gate TM O S V is a n ew te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce area prod u ct a bo u t o n e -h a lf th a t of sta n d a rd M O SFE Ts. This


    OCR Scan     		PDF MTD5P06V

    5252 F 1108

    Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
    Text: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92


    OCR Scan     		PDF O-126M 12IFP-8DA 24Sfc 2025R 2026R 2027R 2029R 2031T 5252 F 1108 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211