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    DPAK PACKAGE RENESAS Search Results

    DPAK PACKAGE RENESAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    DPAK PACKAGE RENESAS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dpak code

    Abstract: D-PAK dpak DPak Package Renesas PRSS0004ZD-C PRSS0004ZD-A PRSS0004ZD-B
    Text: PM486 Package name PVC Polyvinyl chloride Treatment Antistatic Magazine material Maximum storage No. Transistor/Magazine Packing form PRSS0004ZD-A DPAK(L)-(1), DPAK(L)-(1)V 80 Non dry pack PRSS0004ZD-B DPAK(L)-(2), DPAK(L)-(2)V 80 Non dry pack DPAK(S) PRSS0004ZD-C


    Original     		PDF PM486 PRSS0004ZD-A PRSS0004ZD-B PRSS0004ZD-C dpak code D-PAK dpak DPak Package Renesas PRSS0004ZD-C PRSS0004ZD-A PRSS0004ZD-B

    sc-63

    Abstract: PRSS0004ZD-C D-PAK dpak code
    Text: RENESAS Code PRSS0004ZD-C Previous Code DPAK S / DPAK(S)V MASS[Typ.] 0.28g 2.29 ± 0.5 (5.1) (5.1) 0 – 0.25 (1.2) 1.0 Max. Unit: mm 2.3 ± 0.2 0.55 ± 0.1 6.5 ± 0.3 5.6 ± 0.5 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 JEITA Package Code SC-63 2.5 ± 0.5 Package Name


    Original     		PDF PRSS0004ZD-C SC-63 sc-63 PRSS0004ZD-C D-PAK dpak code

    dpak code

    Abstract: PRSS0004ZD-B dpak
    Text: Previous Code MASS[Typ.] DPAK L -(2) / DPAK(L)-(2)V 0.42g 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 RENESAS Code PRSS0004ZD-B 1.2 ± 0.3 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 4.7 ± 0.5 JEITA Package Code ⎯ 3.1 ± 0.5 Package Name


    Original     		PDF PRSS0004ZD-B dpak code PRSS0004ZD-B dpak

    dpak code

    Abstract: D-PAK 042g PRSS0004ZD-A
    Text: Previous Code DPAK L -(1) / DPAK(L)-(1)V 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 RENESAS Code PRSS0004ZD-A MASS[Typ.] 0.42g 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.2 ± 0.3 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 16.2 ± 0.5 JEITA Package Code ⎯ 3.1 ± 0.5 Package Name


    Original     		PDF PRSS0004ZD-A dpak code D-PAK 042g PRSS0004ZD-A

    dpak code

    Abstract: PRSS0004ZD-D
    Text: JEITA Package Code ⎯ RENESAS Code PRSS0004ZD-D Previous Code DPAK L -(3)/DPAK(L)-(3)V MASS[Typ.] 0.36g Unit: mm 6.5 ± 0.5 2.3 ± 0.2 5.4 ± 0.5 1.2 ± 0.3 16.2 ± 0.5 (1.3) 1.15 ± 0.1 0.8 ± 0.1 0.6 ± 0.1 0.6 ± 0.1 4.7 ± 0.5 6.9 ± 0.5 5.5 ± 0.5 0.55 ± 0.1


    Original     		PDF PRSS0004ZD-D dpak code PRSS0004ZD-D

    Untitled

    Abstract: No abstract text available
    Text: Preliminary RJH60C9DPD Silicon N Channel IGBT Application: Inverter REJ03G1838-0100 Rev.1.00 Oct 14, 2009 Features • High breakdown-voltage • Low on-voltage • Built-in diode RENESAS Package code: PRSS0004ZD-C Package name: DPAK (S ) C 4 1. Gate 2. Collector


    Original     		PDF RJH60C9DPD PRSS0004ZD-C REJ03G1838-0100

    H5N2005DL

    Abstract: H5N2005DL-E H5N2005DS H5N2005DSTL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1104-0300 Rev.3.00 Mar 05, 2009 Features • Low on-resistance • Low drive power • High speed switching Outline RENESAS Package code: PRSS0004ZD-B Package name: DPAK(L -(2) )


    Original     		PDF H5N2005DL, H5N2005DS REJ03G1104-0300 PRSS0004ZD-B PRSS0004ZD-C H5N2005DL H5N2005DL-E H5N2005DS H5N2005DSTL-E PRSS0004ZD-B PRSS0004ZD-C

    CR5AS-12-A1

    Abstract: CR5AS12A CR5AS-12 PRSS0004ZD-D
    Text: CR5AS-12 Thyristor Medium Power Use REJ03G0346-0200 Rev.2.00 Apr.05.2005 Features • IT AV : 5 A • VDRM : 600 V • IGT : 100 µA • Lead Mounted Type • Non-Insulated Type • Glass Passivation Type Outline RENESAS Package code: PRSS0004ZD-D (Package name: DPAK(L)-(3)


    Original     		PDF CR5AS-12 REJ03G0346-0200 PRSS0004ZD-D of-900 Unit2607 CR5AS-12-A1 CR5AS12A CR5AS-12 PRSS0004ZD-D

    TRANSISTOR W2

    Abstract: PRSS0004ZG-A PRSP0014DE-B PRSS0004ZD-C HSOP-11 DPak Package Renesas
    Text: Unit:mm Reel type A Ｂ Ｃ A 330 330 330 P1 8 8.0 8.0 A0 6.9 6.8 6.5 N 100 100 74-81 W1 16.4 17.4 17-19 W2 22.4 21.4 21-23 16-mm width emboss taping Taping code Package name W202-104-XX MP-3A Z1575F, 76F EMBOSS DPAK S HSOP-11 Renesas code Previous code PRSS0004ZG-A TMP3


    Original     		PDF 16-mm W202-104-XX Z1575F, HSOP-11 PRSS0004ZG-A PRSS0004ZD-C PRSP0014DE-B FP-11DTV TRANSISTOR W2 HSOP-11 DPak Package Renesas

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    H7N1009MD

    Abstract: fuel injector mosfet RJM0305JSP HSOP20 solenoid injector injector D-PAK RJM0301JSP injector MOSFET RJM0603JSC
    Text: April 2010 Renesas Electronics Power Devices for Automotives Features Surface mounting and multi-tip built-in package Merits High efficiency and low loss, Best support for high-power control Miniaturization, Integration High avalanche destruction tolerance,


    Original     		PDF injectio009MD H7N1006MD H7N0607DS H7P0601DS 2SK3155 2SK3162 H7N1004DS O220FM HSOP20 H7N1009MD fuel injector mosfet RJM0305JSP HSOP20 solenoid injector injector D-PAK RJM0301JSP injector MOSFET RJM0603JSC

    dpak code

    Abstract: H5N2510DL H5N2510DS H5N2510DSTL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1110-0200 Previous: ADE-208-1379 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF H5N2510DL, H5N2510DS REJ03G1110-0200 ADE-208-1379) PRSS0004ZD-B PRSS0004ZD-C dpak code H5N2510DL H5N2510DS H5N2510DSTL-E PRSS0004ZD-B PRSS0004ZD-C

    H5N2005DSTL-E

    Abstract: H5N2005DL H5N2005DL-E H5N2005DS PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1104-0200 Previous: ADE-208-1373 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF H5N2005DL, H5N2005DS REJ03G1104-0200 ADE-208-1373) PRSS0004ZD-B PRSS0004ZD-C H5N2005DSTL-E H5N2005DL H5N2005DL-E H5N2005DS PRSS0004ZD-B PRSS0004ZD-C

    2SK3274

    Abstract: 2SK3274STL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: 2SK3274 L , 2SK3274 (S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1098-0300 Rev.3.00 May 15, 2006 Features • • • • Low on-resistance RDS (on) = 10 mΩ typ. 4.5 V gate drive device High speed switching Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF 2SK3274 REJ03G1098-0300 PRSS0004ZD-B PRSS0004ZD-C 2SK3274 2SK3274STL-E PRSS0004ZD-B PRSS0004ZD-C

    H7N1004DS

    Abstract: H7N0607DL H7N0607DS H7N1004DL H7N1004DSTL PRSS0004ZD-B PRSS0004ZD-C
    Text: H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 Features • Low on-resistance RDS on = 25 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF H7N1004DL, H7N1004DS REJ03G1482-0100 PRSS0004ZD-B PRSS0004ZD-C H7N0607DS H7N0607DL H7N1004DS H7N0607DL H7N0607DS H7N1004DL H7N1004DSTL PRSS0004ZD-B PRSS0004ZD-C

    H5N2505DL

    Abstract: H5N2505DL-E H5N2505DS H5N2505DSTL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1107-0300 Rev.3.00 Oct 16, 2006 Features • • • • • Low on-resistance Low drive current High speed switching Low gate change Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF H5N2505DL, H5N2505DS REJ03G1107-0300 PRSS0004ZD-B PRSS0004ZD-C H5N2505DL H5N2505DL-E H5N2505DS H5N2505DSTL-E PRSS0004ZD-B PRSS0004ZD-C

    H7N1005DL

    Abstract: H7N1005DS H7N1005DSTL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1736-0100 Rev.1.00 Sep 19, 2008 Features • Low on-resistance RDS on = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF H7N1005DL, H7N1005DS REJ03G1736-0100 PRSS0004ZD-B PRSS0004ZD-C H7N1005DL H7N1005DS H7N1005DSTL-E PRSS0004ZD-B PRSS0004ZD-C

    H7P0601DL

    Abstract: H7P0601DS H7P1002DL H7P1002DS PRSS0004ZD-B PRSS0004ZD-C h7p0601
    Text: H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Features • Low on-resistance RDS on = 85 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF H7P1002DL, H7P1002DS REJ03G1601-0100 PRSS0004ZD-B PRSS0004ZD-C H7P0601DS H7P0601DL H7P0601DL H7P0601DS H7P1002DL H7P1002DS PRSS0004ZD-B PRSS0004ZD-C h7p0601

    2SK3147

    Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: 2SK3147 L , 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0300 Rev.3.00 Aug 17, 2009 Features • Low on-resistance RDS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF 2SK3147 REJ03G1072-0300 PRSS0004ZD-B PRSS0004ZD-C 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C

    CR5AS12A

    Abstract: CR5AS-12A 20-100 general semiconductor mp3a CR3AS-12A
    Text: Preliminary Datasheet CR5AS-12A 600V - 5A - Thyristor Medium Power Use R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 Features • Non-Insulated Type  Plannar Type  IT AV : 5 A  VDRM : 600 V  IGT : 100 A Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A)


    Original     		PDF CR5AS-12A R07DS0332EJ0300 PRSS0004ZG-A PRSS0004ZD-D CR5AS12A CR5AS-12A 20-100 general semiconductor mp3a CR3AS-12A

    2SK2796STL

    Abstract: 2SK2796 2SK2796L-E 2SK2796STL-E PRSS0004ZD-A PRSS0004ZD-C
    Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1034-0500 (Previous: ADE-208-534C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004ZD-A


    Original     		PDF 2SK2796 REJ03G1034-0500 ADE-208-534C) PRSS0004ZD-A PRSS0004ZD-C 2SK2796STL 2SK2796L-E 2SK2796STL-E PRSS0004ZD-A PRSS0004ZD-C

    2SK2926L

    Abstract: 2SK2926 2SK2926STL-E 2SK2926L-E PRSS0004ZD-B PRSS0004ZD-C
    Text: 2SK2926 L , 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1040-0200 (Previous: ADE-208-535) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.042 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF 2SK2926 REJ03G1040-0200 ADE-208-535) PRSS0004ZD-B PRSS0004ZD-C 2SK2926L 2SK2926STL-E 2SK2926L-E PRSS0004ZD-B PRSS0004ZD-C