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    DQ MODEL Search Results

    DQ MODEL Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TPS6508700RSKR Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments
    TPS6508700RSKT Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments Buy

    DQ MODEL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Matsushita Miniature Relay s2 12v

    Abstract: Matsushita Miniature Relay s2 5v Matsushita Electric Works relay Matsushita relay Relay Matsushita ADQM16006 ADQM16009 ADQM16012 ADQM16024 ADQM1604H
    Text: Polarized Power Relays Miniature 60A* Polarized Power Relay *High capacity of 60 A achieved, twice the previous model. http://www.mew.co.jp/ac/e/ DQ-M Relay ASCT1B352E ’08.7 New Matsushita Electric Works, Ltd. DQ-M ADQM 60A POWER LATCHING RELAY DQ-M RELAYS (ADQM)


    Original     		ASCT1B352E 500mW Matsushita Miniature Relay s2 12v Matsushita Miniature Relay s2 5v Matsushita Electric Works relay Matsushita relay Relay Matsushita ADQM16006 ADQM16009 ADQM16012 ADQM16024 ADQM1604H PDF

    transistor cd 4400

    Abstract: No abstract text available
    Text: /3&0 /3& 6XSHU ,2 ZLWK +DUGZDUH 0RQLWRULQJ %ORFN %&#$ S S S S S S S S  9ROW 2SHUDWLRQ 6,2 %ORFN LV  9ROW 7ROHUDQW /3& ,QWHUIDFH $&3,  &RPSOLDQW DQ &RQWURO  )DQ 6SHHG &RQWURO 2XWSXWV   )DQ 7DFKRPHWHU ,QSXWV  3URJUDPPDEOH :DNHXS YHQW ,QWHUIDFH


    Original     		LPC47M192 transistor cd 4400 PDF

    1500W resistor

    Abstract: 12000W SPOT WELDERS 750W Wire wound resistor inductance
    Text: TOKEN DQ Tubular Wirewound Power Resistors Wave-type Tubular Wirewound Power Resistors Wave-Shape Ribbon-Wound Design Neutralize Inductance Parasitoid DQ Preview Ribbon-Wound Power Resistor Construction: ● A tubular ceramic has two terminals, and is wound with a resistance element consisting of a


    Original     		0000W 1500W resistor 12000W SPOT WELDERS 750W Wire wound resistor inductance PDF

    Untitled

    Abstract: No abstract text available
    Text: TOKEN DQ Tubular Wirewound Power Resistors Wave-type Tubular Wirewound Power Resistors Wave-Shape Ribbon-Wound Design Neutralize Inductance Parasitoid DQ Preview Ribbon-Wound Power Resistor Construction: ● A tubular ceramic has two terminals, and is wound with a resistance element consisting of a


    Original     		0000W PDF

    diode 31 DQ 05

    Abstract: No abstract text available
    Text: DIGITALLY CONTROLLED, 360-DEG. PIN DIODE P H A S E SH IFTER S E R IE S DQ GENERAL INFORMATION: KDI/Triangle's Series DQ digitally controlled PIN-diode phase shifters vary the phase of a micro­ wave signal in response to a TTL-compatible logic input signal.


    OCR Scan     		360-DEG. 0-to-360-deg. DB-25P diode 31 DQ 05 PDF

    NT5DS16M16BF-6K

    Abstract: NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M
    Text: NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS32M8BG NT5DS16M16BG 256Mb DDR SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions


    Original     		NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS16M16BF-6K NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M PDF

    park and clark transformation

    Abstract: 3-phase induction motors test results point of common coupling clarke transformation ac induction motor stator winding data Park transformation "external rotor" 12 poles AD2S105AP Park transformation implemented in dsp clarke transformation in power quality
    Text: a FEATURES Current Conditioning Complete Vector Transformation on Silicon Three-Phase 120° and Orthogonal 90° Signal Transformation Three-Phase Balance Diagnostic–Homopolar Output DQ Manipulation Real-Time Filtering APPLICATIONS AC Induction Motor Control


    Original     		AD2S105 AD2S105. AD2S105 44-Lead P-44A) C1938 park and clark transformation 3-phase induction motors test results point of common coupling clarke transformation ac induction motor stator winding data Park transformation "external rotor" 12 poles AD2S105AP Park transformation implemented in dsp clarke transformation in power quality PDF

    CU4R

    Abstract: UCVC ccb software
    Text: PMC-Sierra, Inc. ,V VX  W U XP EH 1 FW R HQ 2 RF XP H '    EH U 30 &     8VHU•V 0DQXDO Preliminary 3U RS UL HW DU \ DQ G FR Q R EL W V IL GH QW LD OW   & 6 7 UD II LF LH UU D ,Q F  70 30 $ DQ G IR U HQ W RP HU V· UL VH  YH U HU QD


    Original     		PM73487 PMC-980658: CU4R UCVC ccb software PDF

    MT29F16G08ABACA

    Abstract: MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F32G08AFACA MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


    Original     		MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB PDF

    MT29F16G08ABACA

    Abstract: MT29F32G08afacawp JESD47 compliant MT29F32G08AFACA MT29F16G08Abacawp MT29F32G08A MT29F64G08A MT29F64G08 DR10H NAND Flash DIE
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


    Original     		MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F32G08afacawp JESD47 compliant MT29F16G08Abacawp MT29F32G08A MT29F64G08A MT29F64G08 DR10H NAND Flash DIE PDF

    NT5DS32M16CS

    Abstract: NT5DS32M16CS-5T NT5DS64M8CS-5T DDR333 DDR400 NT5DS64M8CG X32116 NT5DS64M8CS
    Text: NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS


    Original     		NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR400) DDR333) NT5DS32M16CS NT5DS32M16CS-5T NT5DS64M8CS-5T DDR333 DDR400 NT5DS64M8CG X32116 NT5DS64M8CS PDF

    MT29F16G08ABACA

    Abstract: MT29F32G08 MT29F16G08ABACAWP 29f16g08 MT29F32G08AFACA MT29F16G08ABA MT29F32G08afacawp M72A Micron ONFI 2.2 MT29F16G08ABAC
    Text: Micron Confidential and Proprietary Advance‡ 16Gb, 32Gb Asynchronous/Synchronous NAND Features NAND Flash Memory • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane


    Original     		MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB MT29F16G08ABCCBH1 09005aef83fccd10 MT29F16G08ABACA MT29F32G08 MT29F16G08ABACAWP 29f16g08 MT29F16G08ABA MT29F32G08afacawp M72A Micron ONFI 2.2 MT29F16G08ABAC PDF

    Untitled

    Abstract: No abstract text available
    Text: NT5DS16M16CS-6KI NT5DS32M8CS-6KI NT5DS16M16CS-5TI NT5DS32M8CS-5TI 256Mb DDR SDRAM - Preliminary Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS


    Original     		NT5DS16M16CS-6KI NT5DS32M8CS-6KI NT5DS16M16CS-5TI NT5DS32M8CS-5TI 256Mb DDR333) DDR400) 110nm PDF

    NT5DS8M16FS-5TI

    Abstract: No abstract text available
    Text: NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb DDR SDRAM - Preliminary Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS


    Original     		NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb NT5DS8M16FS-5TI PDF

    DDR333

    Abstract: NT5DS32M8AT NT5DS32M8AT-6 NT5DS32M8AW NT5DS32M8AW-6 NT5DS64M4AT NT5DS64M4AT-6 NT5DS64M4AW NT5DS64M4AW-6 256mb ddr333 200 pin
    Text: NT5DS64M4AT NT5DS64M4AW NT5DS32M8AT NT5DS32M8AW 256Mb DDR333 SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions. • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS


    Original     		NT5DS64M4AT NT5DS64M4AW NT5DS32M8AT NT5DS32M8AW 256Mb DDR333 66pin DDR333 NT5DS32M8AT-6 NT5DS32M8AW NT5DS32M8AW-6 NT5DS64M4AT-6 NT5DS64M4AW NT5DS64M4AW-6 256mb ddr333 200 pin PDF

    3 phase to d-q transformation

    Abstract: park and clark transformation
    Text: Three-Phase Current Conditioner A N A LO G D E V IC E S AD2S105 FEATURES Current Conditioning Complete Vector Transformation on Silicon Three-Phase 120° and Orthogonal 90° Signal Transformation Three-Phase Balance Diagnostic-Homopolar Output DQ Manipulation


    OCR Scan     		AD2S105 44-Lead P-44A) 3 phase to d-q transformation park and clark transformation PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Three-Phase Current Conditioner AD2S105 FEATURES Current Conditioning Com plete Vector Transform ation on Silicon Three-Phase 120° and Orthogonal 90° Signal Transformation Three-Phase Balance Diagnostic-Hom opolar Output DQ M anipulation Real-Time Filtering


    OCR Scan     		AD2S105 AD2S105 Two16-BIT 00427b? 44-Lead P-44A) 0Q427bfl PDF

    NT5DS32M16CS-5T

    Abstract: NT5DS32M16CS Nanya Technology nt5ds32m16cs-6k NT5DS64M8CS-5T nt5ds64m8cg NT5DS32M16 NANYA DDR333 DDR400
    Text: NT5DS32M16CS NT5DS64M8CS/NT5DS64M8CG NT5DS128M4CS 512Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8


    Original     		NT5DS32M16CS NT5DS64M8CS/NT5DS64M8CG NT5DS128M4CS 512Mb DDR400) DDR333) NT5DS32M16CS-5T NT5DS32M16CS Nanya Technology nt5ds32m16cs-6k NT5DS64M8CS-5T nt5ds64m8cg NT5DS32M16 NANYA DDR333 DDR400 PDF

    DS1620R

    Abstract: DS1620
    Text: DS1620R DS1620R Self–Heating Temperature Sensor FEATURES PIN ASSIGNMENT • Requires no external components • Measures temperatures from –55°C to +125°C in 0.5°C increments. Fahrenheit equivalent is –67°F to 257°F in 0.9°F increments DQ 1 16


    Original     		DS1620R DS1620R DS1620 PDF

    256mb ddr333

    Abstract: No abstract text available
    Text: NT5DS64M4AT NT5DS64M4AW NT5DS32M8AT NT5DS32M8AW 256Mb DDR333 SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions. • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS


    Original     		NT5DS64M4AT NT5DS64M4AW NT5DS32M8AT NT5DS32M8AW 256Mb DDR333 DDR333 256mb ddr333 PDF

    ISO-13486

    Abstract: UV-035DQC def07 UV-035DQ AQAP110 UV-100DQC UV-005DQ OSI Optoelectronics AQAP-1 UV-001D
    Text: UV-DQ / DQC / DK SERIES new Planar Diffused UV Enhanced Photodiode OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV–DQ and UV–DQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity


    Original     		200-400nm 190nm. 320nm. Sh4072 ISO-13486 UV-035DQC def07 UV-035DQ AQAP110 UV-100DQC UV-005DQ OSI Optoelectronics AQAP-1 UV-001D PDF

    NT5DS32M16CS-5T

    Abstract: NT5DS64M8CS-5T NT5DS32M16CS nt5ds32m16cs-6k NT5DS64M8CG-5T NT5DS64M8CS-5TI NT5DS128M4CS-5T NT5DS128M4CS-6K DDR400 NT5DS64M8CG
    Text: NT5DS32M16CS NT5DS64M8CS / NT5DS64M8CG NT5DS128M4CS 512Mb DDR SDRAM Feature z DLL aligns DQ and DQS transitions with CK transitions z DDR 512M bit, Die C, based on 90nm design rules z Double data rate architecture: two data transfers per clock cycle


    Original     		NT5DS32M16CS NT5DS64M8CS NT5DS64M8CG NT5DS128M4CS 512Mb NT5DS32M16CS-5T NT5DS64M8CS-5T NT5DS32M16CS nt5ds32m16cs-6k NT5DS64M8CG-5T NT5DS64M8CS-5TI NT5DS128M4CS-5T NT5DS128M4CS-6K DDR400 NT5DS64M8CG PDF

    256mb ddr333

    Abstract: DDR333 NT5DS32M8AT NT5DS32M8AT-6 NT5DS32M8AW NT5DS32M8AW-6 NT5DS64M4AT NT5DS64M4AT-6 NT5DS64M4AW NT5DS64M4AW-6
    Text: NT5DS64M4AT NT5DS64M4AW NT5DS32M8AT NT5DS32M8AW 256Mb DDR333 SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions. • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS


    Original     		NT5DS64M4AT NT5DS64M4AW NT5DS32M8AT NT5DS32M8AW 256Mb DDR333 66pin DDR333 256mb ddr333 NT5DS32M8AT-6 NT5DS32M8AW NT5DS32M8AW-6 NT5DS64M4AT-6 NT5DS64M4AW NT5DS64M4AW-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1620R Self-Heating Temperature Sensor FEATURES PIN ASSIGNMENT • Requires no external com ponents DQ • Measures tem peratures from -5 5 °C to +125°C in 0.5°C increments. Fahrenheit equivalent is -6 7 °F to 257°F in 0.9°F increments


    OCR Scan     		DS1620R 16-PIN DS1620R PDF