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    TAA 611 T12

    Abstract: x48 chipset IDT72T6360 IDT72T6480 D25N3
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM FEATURES • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb BB324) 72T6480 drw45 TAA 611 T12 x48 chipset IDT72T6360 IDT72T6480 D25N3

    Untitled

    Abstract: No abstract text available
    Text: V826A64M24SA 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 67,108,864 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 64M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply


    Original     		PDF V826A64M24SA DDR400

    Untitled

    Abstract: No abstract text available
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 36 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM FEATURES • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb BB324) 72T6360

    Untitled

    Abstract: No abstract text available
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb BB324) 72T6480 drw45

    TAA 611 T12

    Abstract: 72T6480 BA1-B11 d25n3 BA0-C11 k4h561638f A11-C10 q35t Q35T1 A7D9
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb drw44 BB324) 72T6480 drw45 TAA 611 T12 72T6480 BA1-B11 d25n3 BA0-C11 k4h561638f A11-C10 q35t Q35T1 A7D9

    72T6480

    Abstract: dsc-6358 IDT72T6360 IDT72T6480 D2312
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM FEATURES • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb 133MHz IDT72T6480 x48in x48out x24out x12out 72T6480 dsc-6358 IDT72T6360 IDT72T6480 D2312

    IDT72T6360

    Abstract: IDT72T6480 2x16Mb
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 36 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb BB324) 72T6360 IDT72T6360 IDT72T6480 2x16Mb

    72T63

    Abstract: No abstract text available
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 36 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb BB324) 72T6360 72T63

    72T63

    Abstract: No abstract text available
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 36 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb 166MHz IDT72T6360 x36in x36out x18out x18in 72T63

    DQS7-G17

    Abstract: BA1-B11 IDT72T6360 IDT72T6480 72T6360 D10-K3 DQS5-B16
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 36 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM FEATURES • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb 166MHz IDT72T6360 x36in x36out x18out x18in DQS7-G17 BA1-B11 IDT72T6360 IDT72T6480 72T6360 D10-K3 DQS5-B16

    TAA 611 T12

    Abstract: A6C9 128M DDR SDR SDRAM samsung 0 IDT72T6360 IDT72T6480
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb BB324) 72T6480 drw45 TAA 611 T12 A6C9 128M DDR SDR SDRAM samsung 0 IDT72T6360 IDT72T6480

    TAA 611 T12

    Abstract: 17x18 BA0-C11 DQ51d DQ34-C12
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 36 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb IDT72T6360 BB324) 72T6360 TAA 611 T12 17x18 BA0-C11 DQ51d DQ34-C12

    Untitled

    Abstract: No abstract text available
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM FEATURES • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb BB324) 72T6480 drw45

    M29F800A3BT12

    Abstract: m29f800a3br 29F800A
    Text: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 M29F800A2 8M CMOS Flash Memory Organization: 524,288 words x 16 bits 1,048,576 words x 8 bits Power Supply Voltage: V q c = 3.3 V ± 0.3 V Access Time: M29F800A3—80 = 80 ns Max


    OCR Scan     		PDF M29F800A3/D M29F800A3-- M29F80QA M29F800A3-12 M29F800A3 M29F800A2 48-Pin M29F800A3U M29F800A3B M29F800A3BT12 m29f800a3br 29F800A

    ea423

    Abstract: No abstract text available
    Text: N E C E LECTRONI CS INC blE ì> m b427525 NEC 0D34317 MC-422000A 32 2,097,152 X 32-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-422000A32 is a fast-page dynamic RAM mod­ ule organized as 2,097,152 words by 32 bits and de­


    OCR Scan     		PDF b427525 0D34317 MC-422000A 32-Bit MC-422000A32 -422000A 0G34331 ea423

    intel pa28f400

    Abstract: intel 28F400 28F400 29053 intel flash A0513 28f400 interface intel 28f800 A76T intel AP-569
    Text: M f ä ilL D G M Ä Ö S Y in le l 4-MBIT (256K x 16, 512K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B, 28F400CE-T/B, 28F 004B E -T /B Intel Sm artVoltage Technology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read Operation


    OCR Scan     		PDF 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B, 28F400CE-T/B, 28F004BE-T/B x8/x16-Selectable 28F400 32-bit BV-60 TBV-80 intel pa28f400 intel 28F400 29053 intel flash A0513 28f400 interface intel 28f800 A76T intel AP-569

    Untitled

    Abstract: No abstract text available
    Text: i n y 4-MBIT 256K x 16, 512K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B, 28F400CE-T/B, 28F004BE-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation — Increased Programming Throughput


    OCR Scan     		PDF 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B, 28F400CE-T/B, 28F004BE-T/B x8/x16-Selectable 28F400 32-bit BV-60 TBV-80

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 7 V 1 8 1 1 0 /1 1 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM -HYUNDAI PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .


    OCR Scan     		PDF 486/Pentium 20ns/25ns/30ns 40MHz 00DbP77 1DH04-11-MAY95 HY67V18110/111 HY67V18110C HY67V18111C

    Untitled

    Abstract: No abstract text available
    Text: 3D7303 MONOLITHIC TRIPLE FIXED DELAY LINE SERIES 3D7303 delay devices, me. FEATURES PACKAGES All-silicon, low-power CMOS technology TTL/CMOS compatible inputs and outputs Vapor phase, IR and wave solderable Auto-insertable (DIP pkg.) Low ground bounce noise


    OCR Scan     		PDF 3D7303 3D7303) 500ns 0C-70C) 14-pin

    Untitled

    Abstract: No abstract text available
    Text: irrigl, PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — Increased Programming Throughput


    OCR Scan     		PDF 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B 28F002/400BX- 28F002/400BL-T/B AP-604 AP-617 AB-57

    Untitled

    Abstract: No abstract text available
    Text: HY6718110/111 HYUNDAI 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a


    OCR Scan     		PDF HY6718110/111 486/Pentium 15ns/20ns/25ns 50MHz 486/Pentium 4b75066 1DH03-11-MAY95 HY6718110/111 4b75DÃ

    MSC23236C

    Abstract: 80BS20
    Text: O K I Semiconductor M SC23236C/CL-XXBS20/PS20 2,097,152-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23236C/CL-xxBS20 / DS20 is a fully decoded 2,097,152-word 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 4-Mb DRAMs 1M x 4 in SOJ


    OCR Scan     		PDF MSC23236C/CL-XXBS20/PS20 152-Word 36-Bit M5C23236C/CL-xxBS20 /DS20 72-pin MSC23236C 80BS20

    Untitled

    Abstract: No abstract text available
    Text: A M D £1 Am27X1024 1 Megabit 64 K x 16-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed


    OCR Scan     		PDF Am27X1024 16-Bit) 044--44-Pin 16-038-SQ

    132-6d

    Abstract: No abstract text available
    Text: Ftaucr I nform ation SHARP LhesFiæ g^ 16M 2 M x 8 / 1 M x 1 6 Rage Mode Rash Memory FEATURES • High speed page mode read performance - Normal access time 100 ns - Page mode access time 50 ns • Page depth 16 bytes's words • High speed write performance


    OCR Scan     		PDF -18IZ DQ11C T98187 132-6d