M58BF008
Abstract: PQFP80 1A000-1BFFF 7N80
Text: M58BF008 8 Mbit 256Kb x32, Burst Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 5V for Program, Erase and Read – VDDQ = 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ CONFIGURABLE OPTIONS
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M58BF008
256Kb
LBGA80
PQFP80
40MHz
M58BF008
PQFP80
1A000-1BFFF
7N80
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SILICONIX DG201
Abstract: DG202 SILICONIX DQ202 DG201A dg201abk siliconix DG201 dg202cj siliconix
Text: SILICONIX INC 03 8254735 SILICONIX » E § Û55473S 0012145 4 03E INC 3 Slllconix Slllconix Incorporated D 12145 DG201 A/202 Quad Monolithic SPST CMOS Analoa Switches T—51—11 FEATURES BENEFITS APPLICATIONS • + 15 Volt Input Range • Wide Dynamic Range
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55473S
DG201
yDQ201A
DG202
DG201A
DG202
2S4735
T-51-11
X1000)
SILICONIX DG201
DG202 SILICONIX
DQ202
dg201abk siliconix
dg202cj siliconix
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952a
Abstract: EPR-83 KBR-480B
Text: TOSHIBA U C /U P SHE D • T0 T 7 2 4 T DDSG12Ö S2T « T 0 S 3 T O S H IB A TM P47C452A /952A C M O S 4 -B IT M IC R O C O N T R O L L E R TMP47C452AN TMP47C452AF The 4/J£452A is a high perform ance 4-bit single chip m icrocom puter based on the TLCS-47 CMOS series. And
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DDSG12Ö
P47C452A
/952A
TMP47C452AN
TMP47C452AF
TLCS-47
47C452A
TMP47C452AF
952a
EPR-83
KBR-480B
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Untitled
Abstract: No abstract text available
Text: P300A THRU P300M GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3 .0 Amperes FEATURES DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ' ♦ Typical I r less than 0.1 aA
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P300A
P300M
DQ-201
D0-201
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Untitled
Abstract: No abstract text available
Text: SRP300ATHRU SRP300K FAST SWITCHING PLASTIC RECTIFIER Reverse Voltage - 50 to 800 Volts Forward Current -3 .0 Amperes _ FEATURES_ DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability
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SRP300ATHRU
SRP300K
DQ-201
SRP300A
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Untitled
Abstract: No abstract text available
Text: GI500 THRU GI510 GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current -3 .0 Amperes FEATURES DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Typical I r less than 0.1 aA
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GI500
GI510
DQ-201
D0-201
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Untitled
Abstract: No abstract text available
Text: SB320 THRU SB360 MEDIUM CURRENT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts Forward Current - 3 .0 Amperes FEATURES DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal to silicon rectifier, majority
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SB320
SB360
DQ-201
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Untitled
Abstract: No abstract text available
Text: UG3001-UG3005 Vishay Lite-On Power Semiconductor 3.0A Ultra-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • U ltra -fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage
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UG3001-UG3005
UG3001
UG3002
UG3003
UG3005
D-74025
24-Jun-98
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diode SB560
Abstract: No abstract text available
Text: SB520-SB560 Vishay Lite-On Power Semiconductor 5.0A Schottky Barrier Rectifiers Features • Schottky barrier chip • Guard ring die construction for transient protection • High surge capability • Low power loss, high efficiency • Surge overload rating to 150A peak
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SB520-SB560
SB520
SB530
SB540
SB550
SB560
D-74025
24-Jun-98
diode SB560
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Untitled
Abstract: No abstract text available
Text: 1N5400G-1N5408G Vishay Lite-On Power Semiconductor 3.0A Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • High current capability and low forw ard voltage drop • Surge overload rating to 125A peak • Plastic m aterial - UL R ecognition flam m ability
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1N5400G-1N5408G
1N5400G
1N5401G
1N5402G
1N5403G
1N5404G
1N5405G
1N5406G
1N5407G
1N5408G
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Untitled
Abstract: No abstract text available
Text: BY396PTHRU BY399P SOFT RECOVER FAST - SWITCHING PLASTIC RECTIFIER Reverse Voltage - 100 to 800 Volts Forward Current - 3 .0 Amperes FEATURES DQ-201 AD 1.0 2 5 .4 MIN. 0.210 (5 .3) 0 . 1 9 0 (4 .8) ’ DIA. 0.3 7 5 (9 .5) 0.2 8 5 (7.2) ♦ Plastic package has Underwriters Laboratory
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BY396PTHRU
BY399P
DQ-201
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Untitled
Abstract: No abstract text available
Text: HER301 HER308 THRU HIGH EFFICIENCY RECTIFIERS DQ-201 AD FEATURES: 0.220 5.6 0.197(5.0) DIA. • Low forward voltage drop • • • • High High High High current capability reliability surge current capability speed switching MECHANICAL DATA Case : Molded plastic
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HER301
HER308
DQ-201
MIL-STD-202,
25Vdc
50/10ns/cm
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Untitled
Abstract: No abstract text available
Text: 1N5400 THRU 1 N 54 08 SILICON RECTIFIERS DQ-201 AD FEATURES: 0.210 5.3 0.190(4.8) DIA. • Low cost • • • • High surge current capability Low leakage current Low forward voltage drop Diffused junction 1.0(25.4) MIN. 0.375(9.5) 0.285(7.2) MECHANICAL DATA
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1N5400
DQ-201
MIL-STD-202,
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OC31
Abstract: No abstract text available
Text: GI850 THRU GI858 FAST SWITCHING PLASTIC RECTIFIER Reverse Voltage - 50 to 800 Volts Forward Current - 3 .0 Amperes _ FEATURES_ DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability
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GI850
GI858
DQ-201
D0-201
OC31
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80 ria 120
Abstract: marking CODE GA SR502 SR520
Text: % TAIWAN SEMICONDUCTOR SR502 - SR520 5.0 AMPS. Schottky Barrier Rectifiers DQ-201AD RoHS COMPLIANCE -TÆH- F e atures 4- ^ ^ •<> ^ Low p o w e r loss, high efficicncy. High current capability, Low VF. High re liab ility High surge current capability.
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SR502
SR520
DQ-201AD
00-2Q1AD
MlL-STD-202.
SR50X
SR52Q)
80 ria 120
marking CODE GA
SR520
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DG201ACJ
Abstract: DG201A DG201ACK ceramic injection dg202
Text: 4302271 ÜDSnEB b “ì5 • HAS DG201A, DG202 30 HARRIS S E M I C O N D U C T O R Quad SPST CMOS Analog Switches December 1993 Features Description • ±15V Input Signal Range • Logic Inputs Accept Negative Voltages The DG201A normally open and DG202 (normally closed)
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DG201A,
DG202
DG201A
DG201A
DG202
175iJ)
DQ201A,
DG201ACJ
DG201ACK
ceramic injection
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Untitled
Abstract: No abstract text available
Text: SB320THRU SB360 MEDIUM CURRENT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts Forward Current - 3.0 Amperes FEATURES C ase Style DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal to silicon rectifier, majority
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SB320THRU
SB360
DQ-201
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DG201BK
Abstract: dg201 cross DG201 DG201AK DG201CJ IH5201 IH5201CPE IH5201IJE IH5201MJE Intersil
Text: 'SSIIIL D G 2 0 1 /IH 5 2 0 1 Quad SPST CMOS Analog Switches FEATURES GENERAL DESCRIPTION • Switches Greater Than 28VP.P Signals With ± 15V Supplies • Quiescent Current Less Than 100pA • Break-Before-Make Switching t0ff= lOOnsec, ton = Typically SOOnsec
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DG201/IH5201
100pA
DG201)
IH5201
DG201/IH5201
23kii
58ktl.
DG201BK
dg201 cross
DG201
DG201AK
DG201CJ
IH5201
IH5201CPE
IH5201IJE
IH5201MJE
Intersil
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DQ501
Abstract: Nippon capacitors
Text: HB56AW1672E-5/6 128MB Buffered FP DRAM DIMM 16-Mword X 72-bit, 8k Refresh, 1 Bank Module 18 pcs of 16M X 4 components HITACHI ADE-203-857(Z) Preliminary, Rev. 0.0 Nov. 11, 1997 Description The HB56AW 1672E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been
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HB56AW1672E-5/6
128MB
16-Mword
72-bit,
ADE-203-857
HB56AW
1672E
64-Mbit
DQ501
Nippon capacitors
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CRSH3-6
Abstract: CN5823 CN5824 CN5825
Text: Schottky R ectifiers Continued lo (AMPS) 3.0 @ Ta (OC) 25 25 25 25 100 250 250 250 IFSM (AMPS) 8.0 5.0 / DQ-201 AD CASE VRRM (VOLTS) 20 CRSH3-2 CN5823 CRSH5-2 CRSH8A-2 30 CRSH3-3 CN5824 CRSH5-3 CRSH8A-3 40 CRSH3-4 CN5825 CRSH5-4 CRSH8A-4 50 CRSH3-5 CRSH5-5
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DO-201
CN5823
CN5824
CN5825
CRSH3-6
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IC MAX327
Abstract: MAX326CEE MAX326CPE MAX326CSE
Text: 19-3966. Rav 2; 7/96 / U I / I X I / M Quad, SPST, Ultra-Low Leakage, CMOS Analog Switches „Feature* ♦ 10pA Max Leakage <1pA Typ The MAX326/MAX327's low charge, injection (2pC typ) minimizes signal error. Operation from single supplies (+10V to +30V), dual supplies (±5V to ±18V), and unbal
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MAX326/MAX327
DG201A/DG202
DG211/DG212
1000pA
5000pA.
IC MAX327
MAX326CEE
MAX326CPE
MAX326CSE
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IN6817
Abstract: IN5822 SR5045 sr560 HER207 iN6818 in6819 SFa5 SR540 IN5818
Text: RECTRON LT» 24E D • T ~ 0 l-0 f 7blOS45 0D000G5 S ■ SCHOTTKY BARRIER RECTIFIERS O PERATIN G TEM P ER A T U R E RANGE 20V to 45V: -6 5 ° C to +125°C, 50V to 60V: -6 5 °C to +150' STO RAG E TEM P ER A T U R E -6 5 °C to +150°G TYPE Maximum Peak Reverse
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7blOS45
AMPERE-SCHOTTKY/DO-41
IN6817
IN5818
IN5819
SR130
HER802
HER803
HER804
HER805
IN5822
SR5045
sr560
HER207
iN6818
in6819
SFa5
SR540
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1N4007 sma
Abstract: P600I D0214AC SMA D0-214AB BY359-1500 BY228-1500 BYX90G 1N4003 1N4004 1N4007
Text: MHTEPTEKC ww w.i-t.ru ¡nfo@ i-t.ru electronics Ten: 095 739-09-95 C T a H A a p T H b ie B b in p A M M T e n b H b ie flM O A b i Kofl: iFmax [A] 1N4002 1N4003 1N4004 1N4005 1N4007 V Rmax [B] 100 200 400 600 1000 If [A] 1,0 1,0 1,0 V f npw [B] 1,1 1,1
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1N4002
1N4003
1N4004
1N4005
1N4007
1N5062
1N5399
BY133
EM516
BYX90G
1N4007 sma
P600I
D0214AC SMA
D0-214AB
BY359-1500
BY228-1500
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1N5400G
Abstract: 1N5408G 5402G 5406G
Text: is TAIWAN SEMICONDUCTOR 1N5400G -1N5408G 3.0 AMPS. Glass Passivated Rectifiers DQ-201 AD RoHS COMPLIANCE -m - 1 .0 2 5 .4 MIN. Features 4- Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability
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1N5400G
-1N5408G
MIL-STD-202,
1N5408G)
1N5408G
5402G
5406G
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