Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-458CA725 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA725 is an 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M
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MC-458CA725
72-BIT
MC-458CA725
uPD4564841
M168S-50A89
M13298EJ3V0DS00
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samsung power module
Abstract: KMM374S400BTN-G2 ADQ37 71b4
Text: KMM374S400BTN NEW JEDEC SDRAM MODULE KMM374S400BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S400BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM374S400BTN
KMM374S400BTN
4Mx72
400mil
168-pin
KMM374S400BTN-G8
KMM374S40OBTN-G0
KMM374S400BTN-G2
samsung power module
ADQ37
71b4
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARYD ecem ber 1995 Edition 2.1 FUJITSU _ P R O D U C T P R O F IL E S H E E T : MB81G83222-010/-012/-015 CMOS 2 X 128K X 3 2 SYNCHRONOUS GRAM CMOS 2 BANKS OF 131,072-WORDS x 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY Marking side The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory
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MB81G83222-010/-012/-015
072-WORDS
32-BIT
MB81G83222
32-bit
374175b
MB81G83222-010
MB81G83222-012
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 x 128K x 32 SYNCHRONOUS GRAM MB81G83222-010/-012/-015 CM OS 2 BANKS OF 131,072-W O RDS x 32-BIT SYN CH R O N O U S GRAPHIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing
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MB81G83222-010/-012/-015
32-BIT
MB81G83222
32-bit
1G83222-010/MB81G83222-012/MB81G83222-015
DIAGRAM-24
FPT-100P-M15)
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Untitled
Abstract: No abstract text available
Text: Advance information •■ II AS4LC512K32S0 3.3V 512Kx32 CMOS synchronous graphic RAM F e a tu re s • Organization Burst read, single w rite operation - 2 6 2 ,1 4 4 w ords x 3 2 bits x 2 banks LVTTL/SSTL com patible I/O • Fully synchronous 3 .3 V pow er supply
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AS4LC512K32S0
512Kx32
0-150Q
-150TQ
0-133Q
-133T
0-100Q
32S0-100T
0001-A.
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Untitled
Abstract: No abstract text available
Text: NN5283206 series CMOS 8Mbit 131,072 wordsx32bitsx2 banks Synchronous Graphic RAM Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Graphic Random Access Memory (SGRAM) organized as 131,072 words x 32 bits x 2 banks. This product features a fully synchronous operation referenced to a positive edge of clock input. The read / write
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NN5283206
wordsx32bitsx2
256words)
NNS283206
NN5283206XX
100pin
X32bits
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DQ22C
Abstract: No abstract text available
Text: IBM043612PQK 32K X 36 BURST SRAM Features • 32K x 36 Organization • 0.5|o. CMOS Technology • Registered Addresses, Data Ins and Control Signals • Asynchronous Output Enable • Synchronous Burst Mode of Operation Compati ble with i486 and Pentium™ Processors
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IBM043612PQK
66MHz
SA14-4654-02
DQ22C
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