LDM-1A
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D382G32BG2 L9D3162G32BG2 8-16 Gb, DDR3, 128M - 256M x 32 Dual Channel Integrated Module 8-16 Gb, DDR3, 128M - 256M x 64 Single Channel Integrated Module Benefits %RDUGDUHDVDYLQJVZLWKVXUIDFH Z ZL PRXQWIULHQGO\SLWFK PP
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L9D382G32BG2
L9D3162G32BG2
DDR3-133
DDR3-1333
LDS-L9D3xxxG32BG2
LDS-L9D3xxG32BG2
LDM-1A
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L9D3256M32DBG2
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D3256M32DBG2 L9D3512M32DBG2 16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module Benefits FEATURES DDR3 Integrated Module [iMOD]: x9DD 9DD4 999 x9FHQWHUWHUPLQDWHGSXVKSXOO ,2 x3DFNDJH PP[PP[PP
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L9D3256M32DBG2
L9D3512M32DBG2
256-512M
DDR3-1866
L9D3256M32DBG2x125
DDR3-1600
L9D3256M32DBG2x15
DDR3-1333
L9D3512M32DBG2x125
L9D3256M32DBG2
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DQ25A
Abstract: DQ20A DQ18A
Text: SG578288FG8SZUU April 27, 2006 Ordering Information Part Numbers Description Module Speed SG578288FG8SZDG 128Mx78 80 * (1GB), DDR2, 244-pin Mini-DIMM,Unbuffered, ECC, 2-Channel (128Mx39 (40), 512MB per Channel), 64Mx8 Based, DDR2-533-444, 36.83mm, 3Ω DQ termination, Green
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SG578288FG8SZUU
SG578288FG8SZDG
128Mx78
244-pin
128Mx39
512MB
64Mx8
DDR2-533-444,
PC2-4200
SG578288FG8SZIL
DQ25A
DQ20A
DQ18A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D3256M32DBG2 L9D3512M32DBG2 16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module Benefits FEATURES DDR3 Integrated Module [iMOD]: "‚"XDD?XDDS?3057X"/202897X1-203X ‚"3057X"egpvgt/vgtokpcvgf."rwuj1rwnn" K1Q " ‚"Rcemcig<"38oo"z"44oo"z"304oo."
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L9D3256M32DBG2
L9D3512M32DBG2
256-512M
3057X
/202897X1-203X
304oo.
493dcnnu
3022oo
LDS-L9D3xxxM32DBG2
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A17A
Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b
Text: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]
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AS9C25256M2036L
AS9C25128M2036L
256/128K
18Gbps
A17A
A15A
a17b
diode A14A
A11A
A13A
A14A
AS9C25128M2036L
AS9C25256M2036L
be0b
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DQ20A
Abstract: A17a DQ18A be2a A13B
Text: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits
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AS9C25256M2036L
18Gbps
18-bit
DQ20A
A17a
DQ18A
be2a
A13B
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Untitled
Abstract: No abstract text available
Text: 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5116180AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5116180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit
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----------------TC5116180AJ/AFT-60/70/-80
TC5116180AJ/AFT
TC5116180AJ/AFT-60/70/80
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