J32CG
Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
Text: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0
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750GX
TSI108
RS232
NC7SZ00
J32CG
61a3 mosfet
BCM5461KFB
61a3
58A6
bcm5461
60F10
L32SD
DQ27152
A26B4
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DQ2060
Abstract: DC1065 EB285 EBSA-285 R164 SA110 B20B20 A59A59 CPU-A13 CPUD22
Text: A B C D COPYRIGHT C 8 1997 DIGITAL EQUIPMENT CORPORATION 8 16 17 18 19 20 21 sht sht sht sht sht sht 7 CHK CHANGE NO. REV CPU, CPU_, a Block Address X-Bus XBUF_, have PCI +3V Stand - +2V, - - - TAG_,RST_ - - 6 bidirects this 5 is Debug Port their Serial Spare
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ebsa285
220PF
RS232
DQ2060
DC1065
EB285
EBSA-285
R164
SA110
B20B20
A59A59
CPU-A13
CPUD22
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CPU-A13
Abstract: EB285 EBSA-285 SA110 ad15 B17B17 A54A CPUD22 DQ511 DC1065
Text: 8 7 6 5 EBSA-285 SHEET SIG 4 Schematic PREFIXES 3 2 1 BAN#=EB285 21285 REV#=REVAX04 Directory EVALUATION BOARD DESCRIPTION D D C sht 1 - Schematic sht 2 - Block sht 3 CPU_, sht 4 XBUS_ Debug pick-up sht 5 FBG_,PCI_ 21285 ’Footbridge’ sht 6 BUF_ sht 7
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EBSA-285
EB285
REVAX04
SDRAM17V+
12VC1+
14C115C2+
10GND
74F14
ebsa285
CPU-A13
EBSA-285
SA110
ad15
B17B17
A54A
CPUD22
DQ511
DC1065
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Thyristor mw 134
Abstract: TRIAC BR100
Text: N AMER PHILIPS/DISCRETE b'îE ]> •! bbS3T31 DQ571S4 P h jjjp s S e m ic o n d u c t ^ _ Silicon bi-directionai trigger device D E S C R IP T IO N 3DH * A P X P re lim in a ry s p e c ific a tio n BR100/05 Q U IC K R E F E R E N C E DATA Silicon bi-directional trigger device
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DQ571S4
BR100/05
DO-35)
MLA872
GD271SS
MLA671
Thyristor mw 134
TRIAC BR100
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PBSRAM
Abstract: 80364K64 DQ571
Text: MC 8 0 3 6 4K 64 Low M o S ys Power 3.3V/2.5V 64K x 64 P B S R A M High perform ance, low pow er pipeline burst SRAM • Ultra low pow er single chip 512Kbyte Cache for green PC and battery pow ered PC 2 High perform ance • • • • 83-133M Hz Speed grades
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512Kbyte
83-133M
128-Pin
PBSRAM
80364K64
DQ571
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿ / P D 4 2 S 4 2 1 A , 4 2 4 2 1 A 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /JPD42S4210A, 424210A are 262 144 words by 16 bits dynamic CMOS RAMs with optional hyper page
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16-BIT,
/JPD42S4210A,
24210A
/PD42S4210A,
44-pin
40-pin
pag02
1PD42S4210A,
24210A.
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Untitled
Abstract: No abstract text available
Text: PH I L I P S INTERNATIONAL Data sheet status Product specification date of issue July 1990 bOE T> • 711üôab 00S710M S && IPHIN LTD351 Liquid Crystal Display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTD351 is a bargraph display. Typical applications
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00S710M
LTD351
LTD351
7110a2b
00S710b
IEC134)
LTD351R-11
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Untitled
Abstract: No abstract text available
Text: IBM11N32645B IBM11N32735B IBM11N32645C IBM11N32735C 32M x 64/72 DRAM Module Features • 168-Pin JEDEC-Standard Unbuffered 8-Byte Dual In-Line Memory Module • 32Mx64, 32Mx72 Dual Bank Extended Data Out Page Mode DIMMs • Performance: • System Performance Benefits:
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IBM11N32645B
IBM11N32735B
IBM11N32645C
IBM11N32735C
168-Pin
32Mx64,
32Mx72
104ns
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Untitled
Abstract: No abstract text available
Text: HB56UW1673EN-6A/7A Preliminary 16,777,216-Word x 72-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8BYTE DIMM HITACHI The HB56UW 1673EN belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution
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HB56UW1673EN-6A/7A
216-Word
72-Bit
168-pin
HB56UW
1673EN
64-Mbit
5165405ATT)
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