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    DQS DETECT Search Results

    DQS DETECT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TLP5212 Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler) DESAT Detection, OCP, AMC, 5000 Vrms, SO16L Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TLP5214A Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler) DESAT Detection, OCP, AMC, 5000 Vrms, SO16L Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    DQS DETECT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DDR400

    Abstract: 400st
    Text: White Electronic Designs W3E232M16S-400STCG PRELIMINARY* 2x32Mx16bit DDR SDRAM FEATURES „ Bidirectional data strobe DQS „ Double-data-rate architecture; two data transfers per clock cycle „ DQS edge-aligned with data for READs; centeraligned with data for WRITEs


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    W3E232M16S-400STCG 2x32Mx16bit 66pin 2X32M DDR266 DDR333 DDR400 400st PDF

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    Abstract: No abstract text available
    Text: ESM T M13S2561616A 2K DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition


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    M13S2561616A PDF

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    Abstract: No abstract text available
    Text: ESM T M13S128324A 2M DDR SDRAM 1M x 32 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition


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    M13S128324A PDF

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    Abstract: No abstract text available
    Text: ESM T M13S64164A 2Y DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition


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    M13S64164A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition


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    M13S2561616A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition


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    M13S2561616A PDF

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    Abstract: No abstract text available
    Text: ESMT M13L2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


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    M13L2561616A PDF

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    Abstract: No abstract text available
    Text: ESMT M13S5121632A 2R DDR SDRAM 8M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK )  DLL aligns DQ and DQS transition with CLK transition


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    M13S5121632A PDF

    DDR SDRAM

    Abstract: No abstract text available
    Text: ESMT M13S128324A 2M DDR SDRAM 1M x 32 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


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    M13S128324A DDR SDRAM PDF

    BA0L 3B

    Abstract: m13s5121632a
    Text: ESMT M13S5121632A 2R DDR SDRAM 8M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK )  DLL aligns DQ and DQS transition with CLK transition


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    M13S5121632A BA0L 3B m13s5121632a PDF

    DDR SDRAM

    Abstract: No abstract text available
    Text: ESMT M13S5121632A 2S DDR SDRAM 8M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK )  DLL aligns DQ and DQS transition with CLK transition


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    M13S5121632A DDR SDRAM PDF

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    Abstract: No abstract text available
    Text: ESMT M13S128168A 2N DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


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    M13S128168A PDF

    DDR SDRAM

    Abstract: BGA60 m13s64164a
    Text: ESMT M13S64164A 2Y DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


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    M13S64164A DDR SDRAM BGA60 m13s64164a PDF

    DDR SDRAM

    Abstract: No abstract text available
    Text: ESMT M13S128168A 2N DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK )  DLL aligns DQ and DQS transition with CLK transition


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    M13S128168A DDR SDRAM PDF

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    Abstract: No abstract text available
    Text: ESMT M13L32321A 2G DDR SDRAM 512K x 32 Bit x 2 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


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    M13L32321A PDF

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    Abstract: No abstract text available
    Text: ESMT M13S2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


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    M13S2561616A PDF

    DDR SDRAM

    Abstract: esmt m13s2561616a
    Text: ESMT M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


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    M13S2561616A DDR SDRAM esmt m13s2561616a PDF

    DDR SDRAM

    Abstract: No abstract text available
    Text: ESMT M13S64164A 2Y Automotive Grade DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


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    M13S64164A DDR SDRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S128168A 2N DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK )  DLL aligns DQ and DQS transition with CLK transition


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    M13S128168A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S2561616A 2K DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


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    M13S2561616A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S5121632A 2R DDR SDRAM 8M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK )  DLL aligns DQ and DQS transition with CLK transition


    Original
    M13S5121632A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S128168A 2N DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK )  DLL aligns DQ and DQS transition with CLK transition


    Original
    M13S128168A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S5121632A 2R DDR SDRAM 8M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK )  DLL aligns DQ and DQS transition with CLK transition


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    M13S5121632A PDF

    MT29F16G08ABACA

    Abstract: MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F32G08AFACA MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


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    MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB PDF