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    ams OSRAM Group GD-QSSPA1.14-UOVK-W4-1-350-R18

    LED OSCONIQ P 3030 BLU 449NM SMD
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    DigiKey GD-QSSPA1.14-UOVK-W4-1-350-R18 Reel 4,500 900
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    Texas Instruments TXB0108DQSR

    IC TRANSLTR BIDIRECTIONAL 20USON
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    DigiKey TXB0108DQSR Reel 3,000 3,000
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    Chip1Stop TXB0108DQSR Cut Tape 1,714
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    Win Source Electronics TXB0108DQSR 145,000
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    Silicon Laboratories Inc EFM8BB31F64G-D-QSOP24R

    IC MCU 8BIT 64KB FLASH 24QSOP
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    DigiKey EFM8BB31F64G-D-QSOP24R Reel 2,500 2,500
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    CUI Inc DQS1-3-S3-S

    DC-DC ISOLATED, 1W, 2.97~3.63 VD
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    DigiKey DQS1-3-S3-S Tube 82 1
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    Mouser Electronics DQS1-3-S3-S 82
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    CUI Inc DQS1-3-S5-S

    DC-DC ISOLATED, 1W, 2.97~3.63 VD
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    DigiKey DQS1-3-S5-S Tube 82 1
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    DQS_ Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DQS-100-1000 Synergy Microwave HYBRIDS 100 to 1000 MHz Original PDF
    DQS-100-500 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-10-100 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-10-50 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-118-174 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-15-150 Synergy Microwave 90 DEGREE HYBRID Original PDF
    DQS-15-150 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-20-100 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-20-200 Synergy Microwave 90 DEGREE HYBRID Original PDF
    DQS-20-200 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-25-250 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-30-150 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-302 Synergy Microwave QUADRATURE HYBRID MODEL Original PDF
    DQS-30-300 Synergy Microwave 90 DEGREE HYBRID Original PDF
    DQS-30-300 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-30-450 Unknown 90 degree HYBRID - WIDE BANDWIDTH (30-450 MHz) Original PDF
    DQS-30-90 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-3-32 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-40-200 Synergy Microwave Hybrid (90 degree) Original PDF
    DQS-40-400 Synergy Microwave 90 DEGREE HYBRID Original PDF

    DQS_ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NT5TU128M8DE

    Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6


    Original     		PDF NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TB256M4DE NT5TB128M8DE NT5TB64M16DG -37B/-37BI DDR2-533 DDR2-667 DDR2-800 NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE

    nt5tu128m8de-ac

    Abstract: NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG 1Gb DDR2 SDRAM Preliminary Edition Features CAS Latency and Frequency Speed Sorts -37B DDR2 -533 -3C DDR2 -667 -AD DDR2 -800 -AC DDR2 -800 Units Bin CL-tRCD-TRP 4-4-4 5-5-5 6-6-6 5-5-5 tck max. Clock Frequency 266


    Original     		PDF NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG nt5tu128m8de-ac NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG

    NT5TU32M16AG-37B

    Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
    Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8


    Original     		PDF NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG /NT5TU32M16AS 512Mb NT5TU32M16AG-37B NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af

    NT5TU32M16CG-BD

    Abstract: NT5TU32M16CG-be NT5TU64M8CE
    Text: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4


    Original     		PDF NT5TU128M4CE NT5TU64M8CE /NT5TU32M16CG 512Mb NT5TU32M16CG-BD NT5TU32M16CG-be

    ARM926EJS

    Abstract: ARM926EJ-S cdm-9 NAND FLASH Controller i2s1tx_clk
    Text: LPC3220/30/40/50 16/32-bit ARM microcontrollers; hardware floating-point coprocessor, USB On-The-Go, and EMC memory interface Rev. 01 — 6 February 2009 Preliminary data sheet 1. General description The LPC3220/30/40/50 embedded microcontrollers were designed for low power, high


    Original     		PDF LPC3220/30/40/50 16/32-bit LPC3220/30/40/50 ARM926EJ-S LPC3220 ARM926EJS cdm-9 NAND FLASH Controller i2s1tx_clk

    TAG 8926

    Abstract: Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733
    Text: MCIMX31 and MCIMX31L Multimedia Applications Processors Reference Manual MCIMX31RM Rev. 1 2/2006 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130


    Original     		PDF MCIMX31 MCIMX31L MCIMX31RM IOIS16 IOIS16/WP MCIMX31L TAG 8926 Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733

    OC48

    Abstract: SSTL-15 SSTL-18
    Text: Arria II Device Handbook Volume 3: Device Datasheet and Addendum Arria II Device Handbook Volume 3: Device Datasheet and Addendum 101 Innovation Drive San Jose, CA 95134 www.altera.com AIIGX5V3-4.0 Document last updated for Altera Complete Design Suite version:


    Original     		PDF

    W971GG6JB

    Abstract: 8X12 DDR2-667 DDR2-800 0A80
    Text: W971GG6JB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W971GG6JB W971GG6JB 8X12 DDR2-667 DDR2-800 0A80

    e500v2

    Abstract: MPC8544 JTAG connector Samsung Nexus S samsung emcp ordering information NV 15F PCI express PCB footprint MSC8101 TLC 1298 SRam program 61256 apple crypto
    Text: MPC8544E PowerQUICC III Integrated Host Processor Family Reference Manual Supports MPC8544E MPC8544 MPC8544ERM Rev. 1 10/2007 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed:


    Original     		PDF MPC8544E MPC8544E MPC8544 MPC8544ERM EL516 II--e500 e500v2 MPC8544 JTAG connector Samsung Nexus S samsung emcp ordering information NV 15F PCI express PCB footprint MSC8101 TLC 1298 SRam program 61256 apple crypto

    socket am3 pinout

    Abstract: socket AM2 pinout AM2 pinout Socket F am2 socket pin diagram am3 socket pinout am3 socket pin diagram am2 socket pinout socket AM3 pinout diagram PCIe cable pinout LX5511
    Text: Broaddown4 User Manual Issue – 2.00 draft Enterpoint Ltd. - Broaddown4 Manual – Issue 2.00 11/04/2007 Kit Contents You should receive the following items with you Broaddown4 development kit: 1 - Broaddown4 Board 2 - Programming Cable Prog2 Figure 1 - Broaddown4 Board


    Original     		PDF

    transistor b1240

    Abstract: B1240 transistor B1240 r DDR333 PAR64 PC2700 REQ64
    Text: Intel 80333 I/O Processor Datasheet Product Features • ■ ■ ■ ■ ■ ■ Integrated Intel XScale® core — 500, 667 and 800 MHz — ARM* V5TE Compliant — 32 KByte, 32-way Set Associative Instruction Cache with cache locking — 32 KByte, 32-way Set Associative Data


    Original     		PDF 32-way 128-Entry Hz/64-bit VCC33 transistor b1240 B1240 transistor B1240 r DDR333 PAR64 PC2700 REQ64

    Untitled

    Abstract: No abstract text available
    Text: External Memory Interfaces in Stratix V Devices 7 2012.12.28 SV51008 Subscribe Feedback The Stratix V devices provide an efficient architecture that allows you to fit wide external memory interfaces to support a high level of system bandwidth within the small modular I/O bank structure. The I/Os are


    Original     		PDF SV51008

    400B

    Abstract: DDR2-400 DDR2-533 DDR667 HYB18T512 HYB18T512160AF HYB18T512400AF HYB18T512800AF HYB18T512400AF5
    Text: D a t a S he et , Rev. 1.3, J a n. 2 00 5 HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2005-01 Published by Infineon Technologies AG,


    Original     		PDF HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit 09112003-SDM9-IQ3P 400B DDR2-400 DDR2-533 DDR667 HYB18T512 HYB18T512160AF HYB18T512400AF HYB18T512800AF HYB18T512400AF5

    PPC405D4

    Abstract: IBM powerpc 405gp NP4GS3 PVA c17 13n07 LP1 K09 marking a00b TDA 2040 XC5 539 405GP
    Text:  IBM PowerNP NP2G Network Processor Preliminary February 12, 2003  0.1 Copyright and Disclaimer  Copyright International Business Machines Corporation 2003 All Rights Reserved US Government Users Restricted Rights - Use, duplication or disclosure restricted by GSA ADP Schedule Contract with IBM Corp.


    Original     		PDF IBM32NP160EPXCAA133. PPC405D4 IBM powerpc 405gp NP4GS3 PVA c17 13n07 LP1 K09 marking a00b TDA 2040 XC5 539 405GP

    Untitled

    Abstract: No abstract text available
    Text: W631GU6KB 8M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GU6KB

    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC

    NT5TU256T8DY

    Abstract: 128 MB DDR2 SDRAM DDR2-667 DDR2-800 NT5TU256T8DY-3C
    Text: NT5TU512T4DY / NT5TU256T8DY 2Gb DDR2 SDRAM DDP Features • Programmable Additive Latency: 0, 1, 2, 3 and 4 CAS Latency and Frequency Speed Sorts DDR2-667 DDR2-800 DDR2-800 (-3C) (-AC) (-AD) Bin • Write Latency = Read Latency -1 Units • Programmable Burst Length: 4 and 8


    Original     		PDF NT5TU512T4DY NT5TU256T8DY DDR2-667 DDR2-800 DDR2-800 NT5TU256T8DY 128 MB DDR2 SDRAM NT5TU256T8DY-3C

    NT5TU64M16

    Abstract: NT5TU128M8BJ-3C NT5TU64M16BM nt5tu64m NT5TU128M8 128 MB DDR2 SDRAM 1GB DDR2 4 banks NT5TU256M4BJ
    Text: NT5TU256M4BJ / NT5TU128M8BJ / NT5TU64M16BM Green 1Gb DDR2 SDRAM Features CAS Latency and Frequency Speed Sorts -5A DDR2 -400 -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 Units Bin (CL-tRCD-TRP) 3-3-3 4-4-4 5-5-5 6-6-6 tck max. Clock Frequency 200 266 333 400


    Original     		PDF NT5TU256M4BJ NT5TU128M8BJ NT5TU64M16BM NT5TU64M16 NT5TU128M8BJ-3C nt5tu64m NT5TU128M8 128 MB DDR2 SDRAM 1GB DDR2 4 banks

    W631GG6KB-12

    Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
    Text: W631GG6KB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GG6KB W631GG6KB-12 W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I

    Untitled

    Abstract: No abstract text available
    Text: W9712G6KB 2M  4 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W9712G6KB

    W971GG6KB

    Abstract: W971GG6KB-3 W971GG6KB-25 W971GG6KB25
    Text: W971GG6KB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W971GG6KB W971GG6KB-3 W971GG6KB-25 W971GG6KB25

    LCMXO2-1200HC-4TG100C

    Abstract: LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC
    Text: MachXO2 Family Handbook HB1010 Version 01.0, November 2010 MachXO2 Family Handbook Table of Contents November 2010 Section I. MachXO2 Family Data Sheet Introduction Features . 1-1


    Original     		PDF HB1010 LCMXO2-1200HC-4TG100C LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC

    sandisk eMMC 4.41

    Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
    Text: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009


    Original     		PDF IMX25RMAD. MX251 MCIMX251) MX253 MCIMX253) MX255 MCIMX255) MX257 MCIMX257) MX258 sandisk eMMC 4.41 toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc

    TN1178

    Abstract: DDR3 DIMM footprint LVCMOS15 LVCMOS25 LVCMOS33 SSTL15D k2xsc
    Text: LatticeECP3 High-Speed I/O Interface June 2010 Technical Note TN1180 Introduction LatticeECP3 devices support high-speed I/O interfaces, including Double Data Rate DDR and Single Data Rate (SDR) interfaces, using the logic built into the Programmable I/O (PIO). SDR applications capture data on one


    Original     		PDF TN1180 TN1178 DDR3 DIMM footprint LVCMOS15 LVCMOS25 LVCMOS33 SSTL15D k2xsc