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    DR-B 2003 POWER SUPPLY Search Results

    DR-B 2003 POWER SUPPLY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    DR-B 2003 POWER SUPPLY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GS8321V18/32/36E-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 165-Bump FP-BGA Commercial Temp Industrial Temp Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V +10%/–10% core power supply • 1.8 V I/O supply • LBO pin for Linear or Interleaved Burst mode


    Original     		PDF GS8321V18/32/36E-250/225/200/166/150/133 165-Bump x32/x36) GS8321V18/32/36E-250/225/200/166/150/133 8321Vxx

    Untitled

    Abstract: No abstract text available
    Text: GS832118/32/36E-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 165-Bump FP-BGA Commercial Temp Industrial Temp Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply


    Original     		PDF GS832118/32/36E-250/225/200/166/150/133 165-Bump x32/x36) GS832118/32/36E-250/225/200/166/150/133 8321xx

    GS832118E-133

    Abstract: GS832118E-150 GS832118E-166 GS832118E-200 GS832118E-225 GS832118E-250 GS832132E-250
    Text: GS832118/32/36E-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 165-Bump FP-BGA Commercial Temp Industrial Temp Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply


    Original     		PDF GS832118/32/36E-250/225/200/166/150/133 165-Bump x32/x36) 8321xx GS832118E-133 GS832118E-150 GS832118E-166 GS832118E-200 GS832118E-225 GS832118E-250 GS832132E-250

    GS8321V18E-133

    Abstract: GS8321V18E-150 GS8321V18E-166 GS8321V18E-200 GS8321V18E-225
    Text: GS8321V18/32/36E-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 165-Bump FP-BGA Commercial Temp Industrial Temp Features Flow Through/Pipeline Reads • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V +10%/–10% core power supply


    Original     		PDF GS8321V18/32/36E-250/225/200/166/150/133 165-Bump 8321Vxx GS8321V18E-133 GS8321V18E-150 GS8321V18E-166 GS8321V18E-200 GS8321V18E-225

    Untitled

    Abstract: No abstract text available
    Text: GS88118B T/D /GS88132B(T/D)/GS88136B(T/D) 100-Pin TQFP & 165-bump BGA Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply


    Original     		PDF GS88118B /GS88132B /GS88136B 100-Pin 165-bump

    Untitled

    Abstract: No abstract text available
    Text: Preliminary U621708 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 70 ns Access Time ! Common data inputs and The U621708 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby


    Original     		PDF U621708 U621708 D-01109 D-01101

    U621708

    Abstract: transistor A16 ZMD AG
    Text: Preliminary U621708 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 70 ns Access Time ! Common data inputs and The U621708 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby


    Original     		PDF U621708 U621708 D-01109 D-01101 transistor A16 ZMD AG

    Untitled

    Abstract: No abstract text available
    Text: Preliminary U621708 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 70 ns Access Time ! Common data inputs and The U621708 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby


    Original     		PDF U621708 U621708 D-01109 D-01101

    8822 TRANSISTOR

    Abstract: U62H64 ZMD AG
    Text: U62H64 Automotive Fast 8K x 8 SRAM Features Description ! Fast 8192 x 8 bit static CMOS The U62H64 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a


    Original     		PDF U62H64 U62H64 D-01109 D-01101 8822 TRANSISTOR ZMD AG

    U62H1708

    Abstract: ZMD AG
    Text: Preliminary U62H1708 Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The U62H1708 is a static RAM manufactured using a CMOS process technology with the following operating modes:


    Original     		PDF U62H1708 U62H1708 D-01109 D-01101 ZMD AG

    Untitled

    Abstract: No abstract text available
    Text: Preliminary UL62H1708B Low Voltage Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The UL62H1708B is a static RAM manufactured using a CMOS process technology with the following


    Original     		PDF UL62H1708B UL62H1708B D-01109 D-01101

    8822 TRANSISTOR

    Abstract: ZMD AG
    Text: Preliminary UL62H1708B Low Voltage Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The UL62H1708B is a static RAM manufactured using a CMOS process technology with the following


    Original     		PDF UL62H1708B UL62H1708B D-01109 D-01101 8822 TRANSISTOR ZMD AG

    U6264B

    Abstract: No abstract text available
    Text: U6264B Standard 8K x 8 SRAM Features Description p 8192 x 8 bit static CMOS RAM p 70 ns Access Times p Common data inputs and The U6264B is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write


    Original     		PDF U6264B U6264B D-01109 D-01101

    Untitled

    Abstract: No abstract text available
    Text: Preliminary UL62H1708A Low Voltage Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The UL62H1708A is a static RAM manufactured using a CMOS process technology with the following


    Original     		PDF UL62H1708A UL62H1708A D-01109 D-01101

    Untitled

    Abstract: No abstract text available
    Text: Preliminary U62H1708 Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The U62H1708 is a static RAM manufactured using a CMOS process technology with the following operating modes:


    Original     		PDF U62H1708 U62H1708 D-01109 D-01101

    pulse amplifier measurement

    Abstract: ZMD AG
    Text: Preliminary UL62H1708A Low Voltage Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The UL62H1708A is a static RAM manufactured using a CMOS process technology with the following


    Original     		PDF UL62H1708A UL62H1708A D-01109 D-01101 pulse amplifier measurement ZMD AG

    U6264B

    Abstract: PDIP28 ZMD AG
    Text: U6264B Standard 8K x 8 SRAM Features Description ! 8192 x 8 bit static CMOS RAM ! 70 ns Access Times ! Common data inputs and The U6264B is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write


    Original     		PDF U6264B U6264B D-01109 D-01101 PDIP28 ZMD AG

    ZMD AG

    Abstract: No abstract text available
    Text: Preliminary UL62H1616B Low Voltage Automotive Fast 64K x 16 SRAM Features Description ! 65536 x 16 bit static CMOS RAM ! 15, 20 and 35 ns Access Time ! Common data inputs and The UL62H1616B is a static RAM manufactured using a CMOS process technology with the following


    Original     		PDF UL62H1616B UL62H1616B D-01109 D-01101 ZMD AG

    SMX3200

    Abstract: SMD CAPACITORS color code irc MR SERIES resistors PHILIps computer monitor schematic SMD Tantalum code capacitor color SMT4004 QFP-7MM-48-LD smd code capacitor color summit application note 22 R21-R23
    Text: Revision J SMT4004 Evaluation Kit Quik-Start User’s Guide SMT4004EV General Description The SMT4004EVAL kit is a fully functional evaluation board designed to demonstrate the features of the SMT4004 Nonvolatile, Quad Power Supply Controller. The EVAL board manages up to 4 unique input


    Original     		PDF SMT4004 SMT4004EV SMT4004EVAL SMX3200 SMD CAPACITORS color code irc MR SERIES resistors PHILIps computer monitor schematic SMD Tantalum code capacitor color QFP-7MM-48-LD smd code capacitor color summit application note 22 R21-R23

    BR6216B-10LL

    Abstract: BR6216B10LL "static ram 2k x 8" br6216
    Text: Static RAM, 2k x 8 bit B R 6 2 1 6 B -1 0 L L The BR6216B-10LL is a CMOS static random access memory SRAM with a memory size of 2048 words x 8 bits. Dimensions (Units : mm) BR6216B-10LL (SDIP-24) 22.9+0.3 It can be operated from a single 5-V power supply and it has inputs and outputs that


    OCR Scan     		PDF BR6216B-10LL SDIP-24 BR6216B-10LL BR6216B10LL "static ram 2k x 8" br6216

    zowc

    Abstract: CEP- 63O HD61203 & HD61202 HD61203TFIA HD61203 BS-58 HD61200 HD61203 * HD61202
    Text: H D 6 1 2 0 3 - D ot M atrix Liquid C ry stal G rap h ic D isp lay C om m on Driver D escription Features The HD61203 is a common signal driver for dot matrix liquid crystal graphic display systems. It generates the timing signals (switch signal to


    OCR Scan     		PDF HD61203- HD61203 HD61202. 04b43D D04L431 004b43S zowc CEP- 63O HD61203 & HD61202 HD61203TFIA BS-58 HD61200 HD61203 * HD61202

    HD61103A

    Abstract: HD61103 LCD Controller HD61830 HD61102
    Text: HD61103A- D o t M atrix Liquid C rystal G raphic D isplay C o m m o n D river D escription Features The HD61103A is a common signal driver for dot matrix liquid crystal graphic display systems. It generates the timing signals (switch signal to


    OCR Scan     		PDF HD61103A- HD61103A HD61102. HD61103A G04b375 HD61103 LCD Controller HD61830 HD61102

    lcd 128 64 hd61202

    Abstract: HD61202-hd61203 HD61203S Hitachi graphic LCD HD61202 hitachi hd61202 hitachi hd61203 HD61203
    Text: H D 6 1 2 0 3 - - Dot M atrix Liquid C rystal Graphic D isplay Com m on Driver Description Features The HD61203 is a common signal driver for dot matrix liquid crystal graphic display systems. It generates the timing signals (switch signal to


    OCR Scan     		PDF D61203- HD61203 HD61202. HD61203 0E819QH C0Z19OH C0Z19QH lcd 128 64 hd61202 HD61202-hd61203 HD61203S Hitachi graphic LCD HD61202 hitachi hd61202 hitachi hd61203

    fcb61c65

    Abstract: SOT117
    Text: Philips Components Data sheet status Product specification date of issue June 1990 FCB61 C65 L/LL 8 K x 8 Fast CMOS low-power static RAM FOR D ETA ILED INFORMATION SEE R ELEV A N T DATA BOOK OR DATA SHEET FEATU RES G EN ERA L DESCRIPTION • Operating supply voltage


    OCR Scan     		PDF FCB61C65L/LL FCF61C65L FCF61C65LL fcb61c65 SOT117