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    DRAM SIMM MEMORY MODULE SAMSUNG 30-PIN 16M Search Results

    DRAM SIMM MEMORY MODULE SAMSUNG 30-PIN 16M Result Highlights (5)

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    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation

    DRAM SIMM MEMORY MODULE SAMSUNG 30-PIN 16M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KMM53216000CK

    Abstract: KMM53216000CKG
    Text: DRAM MODULE KMM53216000CK/CKG 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 JUNE 1998 DRAM MODULE Revision History Version 0.0 (JUNE 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53216000CK/CKG DRAM MODULE KMM53216000CK/CKG


    Original     		PDF KMM53216000CK/CKG 16Mx32 16Mx4 KMM53216000CK/CKG 16Mx4, KMM53216000C 16Mx32bits KMM53216000CK KMM53216000CKG

    16Mx4bits

    Abstract: No abstract text available
    Text: DRAM MODULE M53211600CE0/CJ0-C 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 JUNE 1998 DRAM MODULE Revision History Version 0.0 (JUNE 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53211600CE0/CJ0-C DRAM MODULE M53211600CE0/CJ0-C


    Original     		PDF M53211600CE0/CJ0-C 16Mx32 16Mx4 M53211600CE0/CJ0-C 16Mx4, 16Mx32bits 16Mx4bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53211600BE0/BJ0-C 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.1 May 1998 DRAM MODULE M53211600BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53211600BE0/BJ0-C 16Mx32 16Mx4 M53211600BE0/BJ0-C 16Mx4, 16Mx32bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53611601BE0/BJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53611601BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53611601BE0/BJ0-C 16Mx36 16Mx4 16Mx1 M53611601BE0/BJ0-C 16Mx1,

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53232000CV/CVG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 JUNE 1999 DRAM MODULE Revision History Version 0.0 (JUNE 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232000CV/CVG DRAM MODULE KMM53232000CV/CVG


    Original     		PDF KMM53232000CV/CVG 32Mx32 16Mx4 KMM53232000CV/CVG 16Mx4, KMM53232000C 32Mx32bits 16Mx4bits

    KMM5364003CK

    Abstract: KMM5364003CKG KMM5364103CK KMM5364103CKG
    Text: KMM5364003CK/CKG KMM5364103CK/CKG DRAM MODULE 4Byte 4Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to


    Original     		PDF KMM5364003CK/CKG KMM5364103CK/CKG 4Mx36 KMM5364103CK/CKG KMM53640 KMM5364003CK KMM5364003CKG KMM5364103CK KMM5364103CKG

    KMM53616000CK

    Abstract: KMM53616000CKG
    Text: DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616000CK/CKG DRAM MODULE KMM53616000CK/CKG


    Original     		PDF KMM53616000CK/CKG 16Mx36 16Mx4 16Mx1 KMM53616000CK/CKG 16Mx1, KMM53616000C KMM53616000CK KMM53616000CKG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53611601CE0/CJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53611601CE0/CJ0-C DRAM MODULE M53611601CE0/CJ0-C


    Original     		PDF M53611601CE0/CJ0-C 16Mx36 16Mx4 16Mx1 M53611601CE0/CJ0 16Mx1, M53611601CE0/CJ0-C

    KMM53232000CK

    Abstract: KMM53232000CKG
    Text: DRAM MODULE KMM53232000CK/CKG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232000CK/CKG DRAM MODULE KMM53232000CK/CKG


    Original     		PDF KMM53232000CK/CKG 32Mx32 16Mx4 KMM53232000CK/CKG 16Mx4, KMM53232000C 32Mx32bits KMM53232000CK KMM53232000CKG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216000CV/CVG 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53216000CV/CVG DRAM MODULE KMM53216000CV/CVG


    Original     		PDF KMM53216000CV/CVG 16Mx32 16Mx4 KMM53216000CV/CVG 16Mx4, KMM53216000C 16Mx32bits 16Mx4bits

    "32Mx32" DRAM 72-pin simm

    Abstract: No abstract text available
    Text: DRAM MODULE M53213200CE0/CJ0-C 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53213200CE0/CJ0-C DRAM MODULE M53213200CE0/CJ0-C


    Original     		PDF M53213200CE0/CJ0-C 32Mx32 16Mx4 M53213200CE0/CJ0-C 16Mx4, 32Mx32bits "32Mx32" DRAM 72-pin simm

    KMM5368003CK

    Abstract: KMM5368003CKG KMM5368103CK KMM5368103CKG R/TPC 828
    Text: KMM5368003CK/CKG KMM5368103CK/CKG DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KMM5368103CK/CKG Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to


    Original     		PDF KMM5368003CK/CKG KMM5368103CK/CKG 8Mx36 KMM5368103CK/CKG KMM53680 KMM5368003CK KMM5368003CKG KMM5368103CK KMM5368103CKG R/TPC 828

    dram simm memory module samsung 30-pin 16M

    Abstract: No abstract text available
    Text: KMM5916100/T DRAM MODULES 16Mx9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59161QG/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung «1^5916100^ consist of nine KM41C16100/T DRAMs in 24-pin SOJ/TSOP II packages mounted on a 30-pin


    OCR Scan     		PDF KMM5916100/T 16Mx9 KMM59161QG/T KM41C16100/T 24-pin 30-pin KMM5916100/T KMM5916100-6 KMM5916100-7 dram simm memory module samsung 30-pin 16M

    Untitled

    Abstract: No abstract text available
    Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM594000A 130ns 150ns 180ns KMM594000A 30-pin KM41C4000AJ 20-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM584000A 84000A- 84000A-10 100ns 130ns 150ns 180ns 84000A

    KMM584000

    Abstract: KM41C4000J
    Text: KM M584000 DRAM MODULES 4 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000 is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung KMM584000 consist of eight KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF M584000 KMM584000-8 KMM584000-10 100ns 150ns 180ns KMM584000 KM41C4000J 20-pin

    594000A

    Abstract: No abstract text available
    Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 594000A consist of nine KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM594000A 94000A 41C4000AJ 20-pin 30-pin 94000A- 594000A

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM584000A 84000A 41C4000AJ 20-pin 30-pin 130ns 84000A- 150ns

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53232000BK/BKG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53232000BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53232000BK/BKG 32Mx32 16Mx4 KMM53232000BK/BKG 16Mx4, KMM53232000B 32Mx32bits KMM53232000B

    "24 pin" DRAM

    Abstract: No abstract text available
    Text: DRAM MODULE KM M53232000B K/B KG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE KM M53232000B K/B KG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF M53232000B 32Mx32 16Mx4 KMM53232000BK/BKG 16Mx4, KMM53232000B 32Mx32bits 16Mx4bits "24 pin" DRAM

    64mb 72-pin simm

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53232004BK/BKG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53232004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53232004BK/BKG 32Mx32 16Mx4 KMM53232004BK/BKG 16Mx4, 16Mx4bits KMM53232004BK cycles/64ms 64mb 72-pin simm

    dram simm memory module samsung 30-pin 16M

    Abstract: 16M 30-pin SIMM
    Text: KMM5816100/T DRAM MODULES 1 6 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816100/T is a 16M bit x 8 Dynamic RAM high density memory module. The Samsung KMM5816100/T consist of eight KM41C16000J/T DRAMs


    OCR Scan     		PDF KMM5816100/T KMM5816100-6 KMM5816100-7 KMM5816100-8 110ns 130ns 150ns KMM5816100/T KM41C16000J/T dram simm memory module samsung 30-pin 16M 16M 30-pin SIMM

    D0310

    Abstract: No abstract text available
    Text: KMM5321200BW DRAM Module ELECTRONICS KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM5321200BW is a 1M bit x 32 - KMM5321200BW 1024 cycles/16ms Ref, SOJ, Solder


    OCR Scan     		PDF KMM5321200BW KMM5321200BW/BWG 1Mx32 1Mx16 KMM5321200BW cycles/16ms KMM5321200BWG D0310

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5916000/T KMM5916000/T KM41C16000/T 24-pin 30-pin 22/uF KMM5916000-6 110ns KMM5916000-7