Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRCF123E Silicon NPN epitaxial planar type For digital circuits DRC3123E in ML3 type package • Features Package Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, mount area reduction
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2002/95/EC)
DRCF123E
DRC3123E
DRCF123E0L
150ts.
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRAF123Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF123Y DRA3123Y in ML3 type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DRAF123Y
DRCF123Y
DRA3123Y
DRAF123Y0L
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRCF123J Silicon NPN epitaxial planar type For digital circuits Complementary to DRAF123J DRC3123J in ML3 type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DRCF123J
DRAF123J
DRC3123J
DRCF123J0L
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DRCF123E
Abstract: No abstract text available
Text: DRCF123E Tentative Total pages page DRCF123E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N2 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF123E
DRCF123E
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DRCF123J
Abstract: drcf123
Text: DRCF123J Tentative Total pages page DRCF123J Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N4 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF123J
DRCF123J
drcf123
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DRA3123
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRAF123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF123J DRA3123J in ML3 type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DRAF123J
DRCF123J
DRA3123J
DRAF123J0L
DRA3123
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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MN864779
Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.
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A000021E
MN864779
MN88472
AN12947a
MN6627553
MIP3E3SMY
AN22004A
mip2E2dmy
MIP2F2* replacement
MIP2E7DMY
MIP3E50MY
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