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    DRF200G Search Results

    DRF200G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DRF200G Microsemi RF Driver IC; P(out) (W): 50; fO (MHz): 30; VDD (V): 25; RqJC (°C/Watt): 1.2; Case Style: T3B; COO: D-E Original PDF

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    ultrasound transducer circuit driver

    Abstract: TC. 12A MOSFET Drivers ultrasound transducer high power driver ultrasound transducer "RF MOSFETs" RF MOSFET Driver "30 mhz" driver Amplifier DRF200 DRF200G mosfet gate driver
    Text: DRF200G 30MHz, 12A, MOSFET Gate Driver PRELIMINARY MOSFET GATE DRIVER The DRF200 drives up to 3nF gate capacitance of RF MOSFETs to frequencies over 15MHz or 30MHz into 50Ω. The output rise and fall times are 10ns, into 50Ω, 15ns into 3nF+50Ω. The DRF200 can deliver 100W of


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    PDF DRF200G 30MHz, DRF200 15MHz 30MHz ultrasound transducer circuit driver TC. 12A MOSFET Drivers ultrasound transducer high power driver ultrasound transducer "RF MOSFETs" RF MOSFET Driver "30 mhz" driver Amplifier DRF200G mosfet gate driver

    DRF200G

    Abstract: DRF100 DRF200 ultrasound transducer
    Text: DRF200G 15V, 8A, 30MHz MOSFET Driver The DRF200 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 15MHz. It can produce output currents ≥8A RMS, while


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    PDF DRF200G 30MHz DRF200 15MHz. DRF200 15MHz 30MHz DRF200G DRF100 ultrasound transducer

    2nf capacitor

    Abstract: DRF200 DRF200G
    Text: DRF200G Evaluation Board Figure 1 shows a simplified circuit diagram for the DRF200, a High Power MOSFET Driver. The control signal is applied to the driver through pin 1 IN with a signal ground on pin 2 (SG) that forms a Kelvin Ground return. DC power in is applied at Pin 4 (+Vdd)


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    PDF DRF200G DRF200, DRF200 DRF200. 2nf capacitor

    diode sg 55

    Abstract: drf100 DRF200 DRF200G 30mhz mosfet driver
    Text: DRF200G 15V, 8A, 30MHz MOSFET Driver The DRF200 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 15MHz. It can produce output currents ≥8A RMS, while


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    PDF DRF200G 30MHz DRF200 15MHz. DRF200 15MHz 30MHz diode sg 55 drf100 DRF200G 30mhz mosfet driver

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


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    PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit