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    IXTH02N250

    Abstract: IXTV02N250S PLUS220SMD DS100187B 02N250
    Text: IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 2500V 200mA Ω 450Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF IXTH02N250 IXTV02N250S 200mA O-247 100ms 02N250 10-20-10-B IXTH02N250 IXTV02N250S PLUS220SMD DS100187B