IXFB100N50
Abstract: No abstract text available
Text: Advance Technical Information IXFB100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
|
Original
|
PDF
|
IXFB100N50Q3
250ns
PLUS264TM
100N50Q3
IXFB100N50
|
EGSM900
Abstract: GSM900 RF3140 RF3140PCBA-41X
Text: RF3140 RF3140QuadBand GSM850/GSM 900/DCS/PCS Power Amp Module QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE NOT FOR NEW DESIGNS VCC2 Pb-Free Product Package Style: Module 10 mm x 10 mm Features 10mmx10mm Package Size 3V Quad-Band GSM Handsets VREG 5
|
Original
|
PDF
|
RF3140
RF3140QuadBand
GSM850/GSM
900/DCS/PCS
GSM850/GSM900/DCS/PCS
35dBm
33dBm
GSM850/GSM900
10mmx10mm
EGSM900
GSM900
RF3140
RF3140PCBA-41X
|
PLL-02
Abstract: 26MHZ NDK toyocom Tcxo 26MHZ modulator 26MHz DCS1800 EGSM900 GP01 GP02 PCS1900 RF2716
Text: RF6001 FRACTIONAL-N RF SYNTHESIZER WITH MODULATOR AND DIGITAL IF FILTER NOT FOR NEW DESIGNS MDI/ TXQ MCK/ TXQB SSB SDI SCLK LDTO RXEN 46 TXI 47 MS/ TXIB VDD 48 DCD OSCO Part of the POLARIS TOTAL RADIO™ Solution RoHS Compliant & Pb-Free Product Package Style: QFN, 48-Pin, 7 x 7
|
Original
|
PDF
|
RF6001
48-Pin,
DS100309
PLL-02
26MHZ NDK
toyocom Tcxo 26MHZ
modulator 26MHz
DCS1800
EGSM900
GP01
GP02
PCS1900
RF2716
|
Untitled
Abstract: No abstract text available
Text: RF6001 FRACTIONAL-N RF SYNTHESIZER WITH MODULATOR AND DIGITAL IF FILTER NOT FOR NEW DESIGNS MS/ TXIB MDI/ TXQ MCK/ TXQB SSB SDI SCLK LDTO RXEN 47 TXI VDD 48 DCD OSCO Part of the POLARIS TOTAL RADIO™ Solution RoHS Compliant & Pb-Free Product Package Style: QFN, 48-Pin, 7 x 7
|
Original
|
PDF
|
RF6001
48-Pin,
DS100309
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFB100N50Q3 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
|
Original
|
PDF
|
IXFB100N50Q3
250ns
PLUS264TM
100N50Q3
|
F100K
Abstract: J24E W24B DS100309
Text: 100321 Low Power 9-Bit Inverter General Description The 100321 is a monolithic 9-bit inverter. The device contains nine inverting buffer gates with single input and output. All inputs have 50 kΩ pull-down resistors. n n n n 2000V ESD protection Pin/function compatible with 100121
|
Original
|
PDF
|
MIL-STD-883
DS100309-1
24-Pin
DS100309-3
DS100309-2
DS100309
Abso959
F100K
J24E
W24B
DS100309
|
Untitled
Abstract: No abstract text available
Text: Semiconductor 100321 Low Power 9-Bit Inverter General Description 2000V ESD protection The 100321 is a m onolithic 9-bit inverter. The device con tains nine inverting buffer gates w ith single input and output. All inputs have 50 kQ pull-dow n resistors.
|
OCR Scan
|
PDF
|
24-Pin
|