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    IXTR68P20T

    Abstract: DS100375 DS-100-375
    Text: Advance Technical Information IXTR68P20T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTR68P20T ISOPLUS247 E153432 68P20T IXTR68P20T DS100375 DS-100-375 PDF

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    Abstract: No abstract text available
    Text: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR68P20T RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTR68P20T ISOPLUS247 E153432 -100V 68P20T PDF