RF9802
Abstract: No abstract text available
Text: RF9802 QUAD BAND GPRS/LINEAR EDGE TRANSMIT MODULE Features GND RX1 RX2 RX3 19 18 17 2 16 RX4 Integrated Power Flattening Circuit for Lower Power Variation under Mismatch Conditions Amplifier Die GND 3 SP6T 15 ANTENNA ESD Protection RFIN LB 4 14 GND 13 GND
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RF9802
63mmx5
24mmx1
GSM850/EGSM900
DCS1800/PCS1900
RF716x
RF9802
RF9802SB
RF9802PCBA-41X
GSM850/EGSM900/DCS1800/PCS1900
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band 1 duplexer
Abstract: RF1196 1085MHz umts duplexer LTE duplexer
Text: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB
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RF1196SDM
RF1196
120dBm
Comp27409-9421
DS110107
band 1 duplexer
RF1196
1085MHz
umts duplexer
LTE duplexer
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Untitled
Abstract: No abstract text available
Text: 1N6263 SCHOTTKY BARRIER SWITCHING DIODE Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD-202,
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1N6263
DO-35,
MIL-STD-202,
DO-35
1N6263
DS11010
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Untitled
Abstract: No abstract text available
Text: NBB-402 NBB-402Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features Reliable, Low-Cost HBT Design 15.0dB Gain, +15.8dBm P1dB@2GHz High P1dB of
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NBB-402Cascadable
NBB-402
NBB-402
10GHz
14GHz
15GHz
20GHz
DS110103
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current feedback amplifier 4Ghz
Abstract: No abstract text available
Text: NBB-502 NBB-502Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features Reliable, Low-Cost HBT Design 19.0dB Gain, +13.0dBm P1dB@2GHz High P1dB of
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NBB-502Cascadable
NBB-502
NBB-502
10GHz
14GHz
15GHz
20GHz
DS110104
current feedback amplifier 4Ghz
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1N6263
Abstract: No abstract text available
Text: 1N6263 SCHOTTKY BARRIER SWITCHING DIODE Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance B A · · · C D Mechanical Data · · A DO-35 Case: DO-35, Glass Leads: Solderable per MIL-STD-202,
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1N6263
DO-35
DO-35,
MIL-STD-202,
DS11010
1N6263
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Untitled
Abstract: No abstract text available
Text: RF1147 BROADBAND LOW POWER SP4T SWITCH Package Style: QFN, 16-pin, 3 mm x 3 mm Features Low Frequency - 2.5 GHz Operation Very Low Insertion Loss: Cell Band 0.35 dB PCS Band 0.45 dB High Isolation: Cell Band 29 dB PCS Band 22 dB Compatible With Low Voltage
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RF1147
16-pin,
RF1147
DS110103
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Untitled
Abstract: No abstract text available
Text: NBB-312 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package: MPGA, Bowtie, 3 x 3, Ceramic Features Pin 1 Indicator Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation 50 I/O Matched for High
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NBB-312
12GHz
NBB-312
2002/95/EC
DS110103
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RFSW-2043
Abstract: RFSW2043
Text: RFSW2043 RFSW2043DC to 20Ghz SPDT pHEMT GaAs Switch DC TO 20GHz SPDT pHEMT GaAs SWITCH Package: QFN, 16 pin, 0.8mmx3mmx3mm NC A B A 16 15 14 13 NC 1 12 NC GND 2 11 GND RF2 3 10 RF1 GND 4 9 GND Features Low Insertion Loss: 2.25dB at 20GHz High Isolation: 26dB at 20GHz
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RFSW2043DC
20Ghz
RFSW2043
RFSW2043
20GHF
DS110104
RFSW-2043
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Untitled
Abstract: No abstract text available
Text: Data Sheet July 5, 2012 JRCW450U Series Power Modules; DC-DC Converters 36-75 Vdc Input; 48Vdc Output; 450W Output ORCA SERIES RoHS Compliant Applications • RF Power Amplifier Features • Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with
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JRCW450U
48Vdc
2002/95/EC
2002/95/EC
regulate1-972-244-9428)
DS09-011
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ALESIS SEMICONDUCTOR
Abstract: AL1101 FS48K 0702 DS1101-0702
Text: We make the parts that set creative people free Features General Description The AL1101 stereo ADC is a high performance 24-bit analog to digital audio converter. Dynamic range is 107dB Aweighted . The sensible pinout and easy user interface are unprecedented. The
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AL1101
24-bit
107dB
107dB
24kHz
55kHz
110mW
48kHz)
DS1101-0702
ALESIS SEMICONDUCTOR
FS48K
0702
DS1101-0702
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1N6263A
Abstract: 1N6263
Text: 1N6263 SCHOTTKY BARRIER SWITCHING DIODE Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Glass Leads: Solderable per MIL-STD-202,
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1N6263
DO-35
DO-35,
MIL-STD-202,
DS11010
1N6263A
1N6263
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Untitled
Abstract: No abstract text available
Text: 1N6263 SCHOTTKY BARRIER SWITCHING DIODE POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance B A A C D Mechanical Data • • • • • DO-35 Case: DO-35, Plastic
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1N6263
DO-35,
MIL-STD-202,
DO-35
1N6263
DS11010
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RF3194
Abstract: GSM 300
Text: RF3194QuadBand GMSK power amp module RF3194 Preliminary QUAD-BAND GMSK POWER AMP MODULE Package: Module, 5.00mmx5.00mmx1.00mm Features Power Margin for Flexible Tuning GSM850 Efficiency: 54% EGSM900 Efficiency: 56% DCS1800 Efficiency: 49%
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RF3194QuadBand
RF3194
00mmx5
00mmx1
GSM850
EGSM900
DCS1800
PCS1900
RF3194
RF3194TR13
GSM 300
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4342414
Abstract: microprocessor 80386 internal architecture 27HC1616-55 27HC1616-70
Text: & 27HC1616 Microchip 256K 16K X 16 High Speed CMOS Erasable PROM FEATURES DESCRIPTION • 16 bit configuration • High speed performance —55ns access time available • CMOS Technology for low power consumption —90mA Active current —50mA Standby current
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27HC1616
40-Pin
44-Pin
27HC1616
DS11010E-page
4342414
microprocessor 80386 internal architecture
27HC1616-55
27HC1616-70
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1N6263
Abstract: No abstract text available
Text: visHAY 1N6263 SCHOTTKY BARRIER SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance I Mechanical Data_ •
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1N6263
DO-35,
MIL-STD-202,
DO-35
1N6263
DS11010
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CIS00
Abstract: No abstract text available
Text: M ic r o 2 c h ip 7 H C 1 6 1 6 256K 16K x 16 High-Speed CMOS EPROM FEATURES PACKAGE TYPE • 16 bit configuration • High speed performance - 55 ns access time available • CMOS Technology for low power consumption - 90 mA Active current - 50 mA Standby current
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40-Pin
44-Pin
DS11010E-page
27HC1616
27HC1616
1010E-page
L1G3201
CIS00
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Untitled
Abstract: No abstract text available
Text: 1N6263 SCHOTTKY BARRIER SWITCHING DIODE Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance I T D Mechanical Data_ • • • • • DO-35 Case: D O -35, Plastic
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1N6263
DO-35
IL-STD-202,
DS11010
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Untitled
Abstract: No abstract text available
Text: Microchip 2 7 H C 1 6 1 6 256K 16K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION 16 bit configuration The Microchip Technology Inc. 27HC1616 is a CMOS High speed performance 16K x 16 (256K) Programm able Read Only Memory. — 55ns Maximum access time
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27HC1616
DS11010D-7
27HC1616
DS11010D-8
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Untitled
Abstract: No abstract text available
Text: & M ic ro c h ip 2 7 H C 1 6 1 6 256K 16K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • 16 bit configuration The Microchip Technology Inc. 27HC1616 is a CMOS 16K x 16 (256K) Programmable Read Only Memory. • High speed performance — 45ns Maximum access time
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27HC1616
40-Pin
44-Pin
DS11010C-7
27HC1616
DS11010C-8
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Untitled
Abstract: No abstract text available
Text: 27HC1616 M ic r o c h ip 256K 16K X 16 High Speed CMOS EPROM FEATURES DESCRIPTION • 16 bit configuration • High speed performance —55 ns access time available • CMOS Technology for low power consumption —90 mA Active current —50 mA Standby current
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27HC1616
40-Pin
27HC1616
DS11010E-page
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Untitled
Abstract: No abstract text available
Text: M 27HC1616 ic r o c h ip 256K 16K x 16 High-Speed CMOS EPROM PACKAGE TYPE FEATURES • 16 bit configuration DIP • High speed performance 3 Voo vpp C ce C D nc - 55 ns access time available • CMOS Technology for low power consumption Dnc 3 nc 3*13 3*12
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27HC1616
40-Pin
44-Pin
27HC1616
DS11010E-page
DS1101
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1N6263
Abstract: No abstract text available
Text: 1N6263 r w \T ^ c c I N C O R P O R A T E SC HO TTK Y BARRIER SW ITCHING DIODE D Features_ • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance B A A T C
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1N6263
DO-35,
MIL-STD-202,
1N6263
DO-35
DS11010
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Untitled
Abstract: No abstract text available
Text: MICROCHIP TECHNOLOGY INC b103201 0004037 5 • SEE D 'S '. 2 7 H C 1 6 1 6 Microchip 256K 16K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance —45ns Maximum access time • CMOS Technology for low power consumption
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b103201
40-Pin
44-Pin
Commer3-79
DS11010A-7
1Q3E01
QGG4fl44
27HC1616
27HC1616
DS11010A-8
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