2n7000
Abstract: No abstract text available
Text: 2N7000 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • E Efficient High Density Cell Design Approaching 3 Million Cells per Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current
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Original
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PDF
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2N7000
MIL-STD-202,
DS11304
2n7000
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Untitled
Abstract: No abstract text available
Text: 2N7000 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • Efficient High Density Cell Design Approaching 3 Million Cells per Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current
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Original
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PDF
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2N7000
MIL-STD-202,
DS11304
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transistor discontinued
Abstract: 2n7000 2N700 2N7002 transistor 2n7000
Text: 2N7000 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DISCONTINUED, FOR NEW DESIGN 2N700 USE A 2 E Features • · · · · · Efficient High Density Cell Design Approaching 3 Million Cells per Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current
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Original
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PDF
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2N7000
2N7002
MIL-STD-202,
300ms,
DS11304
transistor discontinued
2n7000
2N700
2N7002
transistor 2n7000
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Untitled
Abstract: No abstract text available
Text: 2N7000 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Efficient High Density Cell Design Approaching 3 Million Cells per Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current Low RDS ON Fast Switching Speed
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Original
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PDF
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2N7000
MIL-STD-202,
300ms,
DS11304
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2n7000
Abstract: No abstract text available
Text: 2N7000 visH A Y N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w i i / POWERSEMICONDUCTOR I Features Efficient High Density Cell Design Approaching 3 Million Cells per Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current
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OCR Scan
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PDF
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2N7000
MIL-STD-202,
300ns,
DS11304
2N7000
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Untitled
Abstract: No abstract text available
Text: 2N7000 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • Efficient High Density Cell Design Approaching 3 Million Cells per Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current Low R d s ON
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OCR Scan
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PDF
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2N7000
MIL-STD-202,
DS11304
|
2n7000
Abstract: No abstract text available
Text: 2N7000 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Efficient High Density Cell Design Approaching 3 Million Cells per Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current LOW R ds hM b AH TO-92 ON Fast Switching Speed
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OCR Scan
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PDF
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2N7000
MIL-STD-202,
DS11304
2N7000
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