DI9953
Abstract: No abstract text available
Text: DI9953 DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Cell Density DMOS Technology Lower On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance 8 5
|
Original
|
PDF
|
DI9953
DS11508
DI9953
|
Untitled
Abstract: No abstract text available
Text: DI9953 DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Lower On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 A 8 6 1 E Min Max A 3.94
|
Original
|
PDF
|
DI9953
DS11508
|
Untitled
Abstract: No abstract text available
Text: VISHAY DI9953 [LITER]!!' DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWE R S E MICON D UCTO R j Features High Cell Density D M O S Technology Lower O n -S ta te R esistance High Pow er and Current Capability SO-8 Fast Switching S peed Dim High Transient T oleran ce
|
OCR Scan
|
PDF
|
DI9953
DS11508
|
Untitled
Abstract: No abstract text available
Text: DI9953 DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Lower On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 llll tpTffl ,6 T- uuu L A P ÏT -M -N-
|
OCR Scan
|
PDF
|
DI9953
DS11508
|