DS1225Y
Abstract: DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY
Text: 6 0 DS1225Y DALLAS SEMICONDUCTOR 64K Nonvolatile SRAM PIN ASSIGNMENT • Directly replaces 8K x 8 volatile static RAM or EEPROM . NC 1 1 28 1 VCC À12 | 2 27 1 WE A7 0 • Data is automatically protected during power loss CO • Data retention in the absence of Vcc
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DS1225Y
28-pin
228-PIN
28-PIN
DS1225Y-200
225Y
DS1225Y-150
DS1225Y-170
DS122SY
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ds1226y
Abstract: Ram 2864 DS1225Y-100 DS1225V 2864 EEPROM DS122SY EEPROM 2864 DS1225Y 2864 EEPROM 28 PINS 2bl42
Text: DALLAS SEMICONDUCTOR CORP 3^E D Sbl413Q 00033^0 M « D A L DS1225Y DALLAS S E M IC O N D U C T O R DS1225Y 64K Nonvolatile SRAM x if f + ilb e Ÿ & t f r 's r FEATURES PIN DESCRIPTION • Data retention in the absence of Voc • Data Is automatically protected during power
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Sbl413Q
ds1225y
DS1225Y
28-pin
100ns,
120ns,
150ns,
170ns,
200ns
DS1225V
ds1226y
Ram 2864
DS1225Y-100
2864 EEPROM
DS122SY
EEPROM 2864
2864 EEPROM 28 PINS
2bl42
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IC 2864 eeprom
Abstract: DS1225Y
Text: D S 1225Y DALLAS SEMICONDUCTOR F E AT URE S D S 12 2 5 Y 64K Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM
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OCR Scan
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PDF
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1225Y
DS1225
28-pin
DS122SY
IC 2864 eeprom
DS1225Y
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