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    DS1345

    Abstract: DS1345AB DS1345Y DS1334
    Text: DS1345Y/AB PRELIMINARY DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • Built–in lithium battery provides more than 10 years of data retention • Data is automatically protected during VCC power loss • Power supply monitor resets processor when VCC


    Original     		PDF DS1345Y/AB 1024K 24rature DS13345Y/AB D1345Y/AB DS34PIN DS1345 DS1345AB DS1345Y DS1334

    "Battery Monitor"

    Abstract: 34-pin DS1345 DS1345AB DS1345Y DS9034PC
    Text: DS1345Y/AB DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Power supply monitor resets processor when VCC


    Original     		PDF DS1345Y/AB 1024K DS1345Y) DS13345Y/AB "Battery Monitor" 34-pin DS1345 DS1345AB DS1345Y DS9034PC

    DS1345

    Abstract: DS1345AB DS1345Y DS9034PC
    Text: DS1345Y/AB DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Power supply monitor resets processor when VCC


    Original     		PDF DS1345Y/AB 1024K DS13345Y/AB DS1345 DS1345AB DS1345Y DS9034PC

    62A17

    Abstract: HCA62A17 62A50 18PDIP 68-LCC
    Text: í Order this data sheet by HCA62A00/D M MOTOROLA HCA62A00 Series SEM ICO NDUCTO RS P.O B O X 20912 • PHOENIX, A R IZ O N A 85036 HCA62A00 SERIES CMOS MACROCELL ARRAYS The HCA62A00 series m acrocell arrays are im plem ented in sil­ icon gate, 2-m icron draw n gate length, dual-layer metal intercon­


    OCR Scan     		PDF HCA62A00/D HCA62A00 62A17 HCA62A17 62A50 18PDIP 68-LCC

    Untitled

    Abstract: No abstract text available
    Text: DS1345Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR FEATURES DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention 34 33 32 31 30 29 28 27 26 25 24 23 • Data is automatically protected during V cc power


    OCR Scan     		PDF DS1345Y/AB DS1345Y) DS1345AB) DS1345| 34-pin DS13345Y/AB D1345Y/AB 68-pin 34P-SM

    Untitled

    Abstract: No abstract text available
    Text: DS1345Y/AB m a • I a m U A L L A 3 SEMICONDUCTOR FEATURES DS1345Y/AB 1024K Nonvolatile SRAM w j^ Battery Monitor PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC NC A 14 A 13 A 12 A11 A 10 A9 A8 A7 A6 A5 A4 A3 A2 A1


    OCR Scan     		PDF DS1345Y/AB DS1345Y/AB 1024K 34-PIN 13345Y/AB

    Untitled

    Abstract: No abstract text available
    Text: DS1345Y/AB DS1345Y/AB DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Power supply monitor resets processor when V cc


    OCR Scan     		PDF DS1345Y/AB 1024K DS9034PC DGlh722 DS13345Y/AB D01b723

    Untitled

    Abstract: No abstract text available
    Text: DS1345Y/AB • % a | ■ a D S 1 3 4 5 Y /A B a 1024K Nonvolatile SRAM U A L L A 9 with Battery Monitor s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 y e a rs m in im u m d a ta re te n tio n in th e a b s e n c e of e x te rn a l p o w e r 34 33


    OCR Scan     		PDF DS1345Y/AB 1024K DS13345Y/AB

    Untitled

    Abstract: No abstract text available
    Text: DS1345Y/AB P R E L IM IN A R Y DS1345Y/AB DALLAS 1024K Nonvolatile SRAM with Battery Monitor SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x R volatile static RAM or EEPROM


    OCR Scan     		PDF DS1345Y/AB 1024K DS1345 34-pin DS13345Y/AB D1345Y/AB 68-pin 34P-SM

    2 bit magnitude comparator

    Abstract: NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400
    Text: A S I C APPLICATION SPECIFIC INTEGRATED CIRCUITS "i NCR 62A00 2-Micron Gate Array Products fM H ffik • 2-micron drawn, 1.5-micron effective, DLM process • 600 to 8,500 equivalent gate complexity with up to 95% utilization • Commercial, industrial, automotive and


    OCR Scan     		PDF 62A00 2 bit magnitude comparator NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400

    Untitled

    Abstract: No abstract text available
    Text: DS1345Y/AB PRELIMINARY DS1345Y/AB DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT FEATURES • Built-in lithium battery provides more than 10 years of data retention • Data is automatically protected during Vcc power loss


    OCR Scan     		PDF DS1345Y/AB 1024K 34-PIN A0-A16 DS13345Y/AB D1345Y/AB 34P-SMT-3

    Untitled

    Abstract: No abstract text available
    Text: DS1345Y/AB PRELIM INARY DS1345Y/AB DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF DS1345Y/AB 1024K DS13345Y/AB D1345Y/AB 34-PIN 68-pin 34P-SMT-3 HIS-40001-04 PLCC-34-SMT