DMN3115UDM
Abstract: No abstract text available
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance
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Original
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PDF
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DMN3115UDM
AEC-Q101
OT-26
J-STD-020
MIL-STD-202,
DS31187
DMN3115UDM
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Untitled
Abstract: No abstract text available
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate
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Original
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PDF
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DMN3115UDM
AEC-Q101
J-STD-020
MIL-STD-202,
DS31187
|
Untitled
Abstract: No abstract text available
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate
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Original
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PDF
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DMN3115UDM
AEC-Q101
J-STD-020
DS31187
|
Untitled
Abstract: No abstract text available
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 30 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage
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Original
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PDF
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DMN3115UDM
AEC-Q101
OT-26
J-STD-020C
DS31187
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marking 3N1
Abstract: DMN3115UDM
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V
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Original
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PDF
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DMN3115UDM
AEC-Q101
OT-26
J-STD-020C
DS31187
marking 3N1
DMN3115UDM
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marking 3N1
Abstract: DMN3115UDM
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage Low Input Capacitance
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Original
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PDF
|
DMN3115UDM
AEC-Q101
OT-26
J-STD-020
MIL-STD-202,
DS31187
marking 3N1
DMN3115UDM
|
Untitled
Abstract: No abstract text available
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 30V 60mΩ @ VGS = 4.5V 80mΩ @ VGS = 2.5V 130mΩ @ VGS = 1.5V • ID TA = +25°C 3.2A 2.7A 2.1A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMN3115UDM
AEC-Q101
DS31187
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