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Catalog Datasheet	MFG & Type	PDF	Document Tags
DS33570 Abstract: 10b8 SOT23-6 Text: ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS 100V Features and Benefits Max ID TA = +25°C (Note 6) 1.9A 1.68A Max RDS(on) 230mΩ @ VGS = 10V 300mΩ @ VGS = 4.5V Description and Applications This new generation TRENCH MOSFETs from Diodes utilizes a	Original	PDF	ZXMN10B08E6 AEC-Q101 DS33570 10b8 SOT23-6

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DS33570

Abstract: 10b8 SOT23-6
Text: ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS 100V Features and Benefits Max ID TA = +25°C (Note 6) 1.9A 1.68A Max RDS(on) 230mΩ @ VGS = 10V 300mΩ @ VGS = 4.5V Description and Applications This new generation TRENCH MOSFETs from Diodes utilizes a

Original

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ZXMN10B08E6 AEC-Q101 DS33570 10b8 SOT23-6