DMG6602SVT-7
Abstract: marking code 66C
Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Mechanical Data
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Original
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DMG6602SVT
AEC-Q101
TSOT26
J-STD-020
DS35106
DMG6602SVT-7
marking code 66C
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PDF
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DMG6602SVT
Abstract: No abstract text available
Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Mechanical Data
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Original
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DMG6602SVT
AEC-Q101
TSOT26
J-STD-020
DS35106
DMG6602SVT
|
PDF
|
D3A marking code diode
Abstract: No abstract text available
Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Mechanical Data
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Original
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DMG6602SVT
AEC-Q101
TSOT26
J-STD-020
DS35106
D3A marking code diode
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PDF
|
Untitled
Abstract: No abstract text available
Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS= 10V 3.4A 100mΩ @ VGS= 4.5V 2.7A 95mΩ @ VGS= -10V -2.8A 140mΩ @ VGS= -4.5V -2.3A Mechanical Data
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Original
|
DMG6602SVT
AEC-Q101
TSOT26
J-STD-020
DS35106
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMMT2907A ADV AN CE I N FORM AT I ON 60V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V ICM = -1A Peak Pulse Current General purpose NPN transistors ideally suited for low power
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Original
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DMMT2907A
AEC-Q101
DS35106
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Mechanical Data
|
Original
|
DMG6602SVT
DS35106
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Mechanical Data
|
Original
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DMG6602SVT
AEC-Q101
TSOT26
J-STD-020
DS35106
|
PDF
|
marking 907
Abstract: SOT-26 ds35106
Text: DMMT2907A ADVANCE INFORMATION 60V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V ICM = -1A Peak Pulse Current General purpose NPN transistors ideally suited for low power
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Original
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DMMT2907A
AEC-Q101
J-STD-020
MIL-STD-202,
DS35106
marking 907
SOT-26
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PDF
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