Untitled
Abstract: No abstract text available
Text: DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary ADV AN CE I N FORM AT I ON V BR DSS • • • • • • • • • • ID RDS(on) max TA = 25°C 1.0Ω @ VGS = -4.5V -700mA 1.5Ω @ VGS = -2.5V -600mA 2.0Ω @ VGS = -1.8V
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Original
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PDF
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DMP21D5UFB4
-700mA
-600mA
-500mA
-380mA
AEC-Q101
DS35284
|
diode marking 141c
Abstract: DMP21D5UFB4
Text: DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 1.0Ω @ VGS = -4.5V -700mA 1.5Ω @ VGS = -2.5V -600mA 2.0Ω @ VGS = -1.8V -500mA
|
Original
|
PDF
|
DMP21D5UFB4
-700mA
-600mA
-500mA
-380mA
AEC-Q101
DS35284
diode marking 141c
DMP21D5UFB4
|
Untitled
Abstract: No abstract text available
Text: DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits ID RDS(on) max TA = 25°C 1.0Ω @ VGS = -4.5V -700mA 2.0Ω @ VGS = -1.8V -500mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMP21D5UFB4
-700mA
-500mA
AEC-Q101
DS35284
|