Untitled
Abstract: No abstract text available
Text: DMP2018LFK P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS on max ID TA = 25°C 16mΩ @ VGS = -4.5V -12.8A 25mΩ @ VGS = -2.0V -10A V(BR)DSS • • • • • • • -20V Description and Applications Low On-Resistance Low Input Capacitance
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Original
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DMP2018LFK
AEC-Q101
DS35357
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PDF
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DMP2018LFK
Abstract: code diode transient DMP2018LFK-7 DS3535
Text: DMP2018LFK P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS on max ID TA = 25°C 16mΩ @ VGS = -4.5V -12.8A 25mΩ @ VGS = -2.0V -10A V(BR)DSS • • • • • • • -20V Description and Applications Low On-Resistance Low Input Capacitance
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Original
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DMP2018LFK
AEC-Q101
DS35357
DMP2018LFK
code diode transient
DMP2018LFK-7
DS3535
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PDF
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Untitled
Abstract: No abstract text available
Text: DMP2018LFK P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS on max ID TA = 25°C 16mΩ @ VGS = -4.5V -12A 25mΩ @ VGS = -2.0V -9.3A V(BR)DSS • • • • • • • -20V Description and Applications Low On-Resistance Low Input Capacitance
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Original
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DMP2018LFK
AEC-Q101
DS35357
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PDF
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