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    Untitled

    Abstract: No abstract text available
    Text: DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 23mΩ @ VGS = 10V 7.5A 33mΩ @ VGS = 4.5V 6.3 A • • • • • • • 30V • • This MOSFET has been designed to minimize the on-state resistance


    Original
    DMN3024SFG AEC-Q101 DS35439 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 23mΩ @ VGS = 10V 7.5A 33mΩ @ VGS = 4.5V 6.3 A • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized


    Original
    DMN3024SFG AEC-Q101 DS35439 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 23mΩ @ VGS = 10V 7.5A 33mΩ @ VGS = 4.5V 6.3 A • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized


    Original
    DMN3024SFG AEC-Q101 DS35439 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 23mΩ @ VGS = 10V 7.5A 33mΩ @ VGS = 4.5V 6.3 A • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized


    Original
    DMN3024SFG AEC-Q101 DS35439 PDF