Untitled
Abstract: No abstract text available
Text: DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits RDS ON max ID max TA = 25°C 23mΩ @ VGS = 10V 7.0A 33mΩ @ VGS = 4.5V 6.0A V(BR)DSS 100% Unclamped Inductive Switch (UIS) test in production Low RDS(ON) – ensures on state losses are minimized
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Original
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DMG7408SFG
AEC-Q101
DS35620
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits RDS ON max ID max TA = 25°C 23mΩ @ VGS = 10V 7.0A 33mΩ @ VGS = 4.5V 6.0A V(BR)DSS • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized
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Original
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DMG7408SFG
AEC-Q101
DS35620
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits RDS ON max ID max TA = 25°C 23mΩ @ VGS = 10V 7.0A 33mΩ @ VGS = 4.5V 6.0A V(BR)DSS • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized
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Original
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DMG7408SFG
AEC-Q101
DS35620
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS ON max ID max TA = 25°C 23mΩ @ VGS = 10V 7.0A 33mΩ @ VGS = 4.5V 6.0A V(BR)DSS • • • • • • 30V • • This MOSFET has been designed to minimize the on-state resistance
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Original
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DMG7408SFG
AEC-Q101
DS35620
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits RDS ON max ID max TA = 25°C 23mΩ @ VGS = 10V 7.0A 33mΩ @ VGS = 4.5V 6.0A V(BR)DSS • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized
|
Original
|
DMG7408SFG
AEC-Q101
DS35620
|
PDF
|