n channel mosfet vds max 60v, id max 260ma
Abstract: No abstract text available
Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) • • • • • • • • • ID TA = +25°C Package 300mA 3Ω @ VGS = 10V SOT323 60V 260mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMN65D8LW
OT323
260mA
300mA
AEC-Q101
DS35639
n channel mosfet vds max 60v, id max 260ma
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 3Ω @ VGS = 10V 300mA 4Ω @ VGS = 5V 260mA • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the
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Original
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DMN65D8LW
260mA
300mA
AEC-Q101
DS35639
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON 3Ω @ VGS = 10V 300mA 4Ω @ VGS = 5V 260mA • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the
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Original
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DMN65D8LW
260mA
AEC-Q101
DS35639
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PDF
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DMN65D
Abstract: n channel mosfet vds max 60v, id max 260ma
Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 3Ω @ VGS = 10V 300mA 4Ω @ VGS = 5V 260mA • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the
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Original
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DMN65D8LW
260mA
300mA
AEC-Q101
DS35639
DMN65D
n channel mosfet vds max 60v, id max 260ma
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PDF
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