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    Untitled

    Abstract: No abstract text available
    Text: DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C 26mΩ @ VGS = 4.5V 4.8A 29mΩ @ VGS = 2.5V 4.5A V(BR)DSS ADVANCED INFORMATION 12V Features and Benefits Description This new generation MOSFET is designed to minimize the on-state


    Original     		PDF DMN1032UCB4 AEC-Q101 DS36643

    Untitled

    Abstract: No abstract text available
    Text: DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C • Low Qg & Qgd • Small Footprint 26mΩ @ VGS = 4.5V 4.8A • Low Profile 0.62mm height 29mΩ @ VGS = 2.5V 4.5A • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		PDF DMN1032UCB4 AEC-Q101 U-WLB1010-4 DS36643