ITS23C06P
Abstract: T0247
Text: ITS23C06 MITEL SEM ICON D UCTOR Medium Frequency Powerline N-Channel IGBT with Ultrafast Diode Supersedes Novem ber 1998, version DS4739-3.0 DS4739-3.1 April 1999 The ITS23C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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ITS23C06
DS4739-3
ITS23C06
ITS23C06P
T0247
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Untitled
Abstract: No abstract text available
Text: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4739-2.1 ITS23C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS23C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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DS4739-2
ITS23C06
ITS23C06
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Untitled
Abstract: No abstract text available
Text: ITS23C06 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4739-2.1 The ITS23C06 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r
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ITS23C06
DS4739
DS4739-2
ITS23C06
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