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Reliance North America WJDS4-7.5-30P-14-RNA 30 position PCB push-in spring c
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DigiKey	WJDS4-7.5-30P-14-RNA	Ammo Pack			50	1 - 10 - 100 $32.83 1000 $26.27 10000 $25.34	Buy Now

DS4753 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IT S 1 5 C 1 2 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4753 - 2.1 The ITS15C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r	OCR Scan	DS4753 ITS15C12	PDF
Untitled Abstract: No abstract text available Text: GEC P L ES SE Y S i SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4753-2.1 IT S 1 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS15C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage	OCR Scan	DS4753-2 ITS15C12	PDF
ITS15C12P Abstract: T0247 Text: ITS15C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4753 - 2.1 The ITS15C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage	OCR Scan	ITS15C12 DS4753 ITS15C12 ITS15C12P T0247	PDF
Untitled Abstract: No abstract text available Text: S i GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4752-2.1 ITS08C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS08C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage	OCR Scan	DS4752-2 ITS08C12 ITS08C12	PDF