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    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr IXFB50N80Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFB50N80Q2 300ns PLUS264 50N80Q2 1-18-10-C PDF

    IXFB50N80Q2

    Abstract: 50n80 DS99005D 50N80Q2
    Text: IXFB50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFB50N80Q2 300ns PLUS264 -55es 50N80Q2 1-18-10-C IXFB50N80Q2 50n80 DS99005D PDF