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Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr IXFB50N80Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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PDF
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IXFB50N80Q2
300ns
PLUS264
50N80Q2
1-18-10-C
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IXFB50N80Q2
Abstract: 50n80 DS99005D 50N80Q2
Text: IXFB50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
|
Original
|
PDF
|
IXFB50N80Q2
300ns
PLUS264
-55es
50N80Q2
1-18-10-C
IXFB50N80Q2
50n80
DS99005D
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