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    IXTT10N100D

    Abstract: 10N100 IXTH10N100D siemens relay rg DS99529A
    Text: Preliminary Technical Information IXTH10N100D IXTT10N100D High Voltage MOSFETs VDSX ID25 = = ≤ RDS on 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH10N100D IXTT10N100D O-268 100ms 10N100D 3-31-09-B IXTT10N100D 10N100 IXTH10N100D siemens relay rg DS99529A

    T10N100

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage MOSFETs VDSX ID25 IXTH10N100D IXTT10N100D = = ≤ RDS on 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH10N100D IXTT10N100D O-268 100ms 10N100D 3-31-09-B T10N100