CHA3023
Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 1-18GHZ
Text: CHA3023 RoHS COMPLIANT 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes
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Original
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PDF
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CHA3023
CHA3023
dBS21
dBS11
dBS22
DSCHA30235263
MS11
MS12
MS21
MS22
PS11
PS12
PS22
1-18GHZ
|
CHA3023
Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 1-18GHZ
Text: CHA3023 RoHS COMPLIANT 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a pHEMT process of 0.25µm gate length, via holes
|
Original
|
PDF
|
CHA3023
CHA3023
dBS21
dBS11
dBS22
DSCHA30235263
MS11
MS12
MS21
MS22
PS11
PS12
PS22
1-18GHZ
|
Untitled
Abstract: No abstract text available
Text: CHA3023 RoHS COMPLIANT 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a pHEMT process of 0.25µm gate length, via holes
|
Original
|
PDF
|
CHA3023
CHA3023
dBS21
dBS11
dBS22
DSCHA30235263
|