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    IXZ308N120

    Abstract: ixzh ixzh08n120
    Text: IXZH08N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


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    IXZH08N120 IXZ308N120 dsIXZH08N120 ixzh ixzh08n120 PDF