Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRF9Z34
Abstract: IRF9Z34PBF
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF9Z34
IRF9Z34PBF
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IRF9Z34
Abstract: SiHF9Z34 SiHF9Z34-E3
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
O-220AB
2002/95/EC
O-220AB
11-Mar-11
IRF9Z34
SiHF9Z34-E3
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
O-220AB
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRFB18N50KPbF
Abstract: IRFB18N50K SiHFB18N50K SiHFB18N50K-E3
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB18N50K,
SiHFB18N50K
O-220
18-Jul-08
IRFB18N50KPbF
IRFB18N50K
SiHFB18N50K-E3
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IRFP264N
Abstract: IRFP264n equivalent SiHFP264N
Text: IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.060 Qg (Max.) (nC) 210 Qgs (nC) 34 Qgd (nC) 94 Configuration Single D TO-247 Advanced Process Technology Dynamic dV/dt Rating
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IRFP264N,
SiHFP264N
O-247
18-Jul-08
IRFP264N
IRFP264n equivalent
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
2002/95/EC
O-220AB
O-220AB
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
O-220AB
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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34N80
OT-227
E153432
125OC
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S8056
Abstract: No abstract text available
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB18N50K,
SiHFB18N50K
O-220
O-220
IRFB18N50KPbF
SiHFB18N50K-E3
IRFB18N50Kmerchantability,
12-Mar-07
S8056
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Untitled
Abstract: No abstract text available
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB18N50K,
SiHFB18N50K
O-220
O-220
IRFB18N50KPbF
SiHFB18N50K-E3
IRFB18N50Khay
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB18N50K,
SiHFB18N50K
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB18N50K,
SiHFB18N50K
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SiHFB18N50K
Abstract: SiHFB18N50K-E3 IRFB18N50K
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB18N50K,
SiHFB18N50K
O-220
18-Jul-08
SiHFB18N50K-E3
IRFB18N50K
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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irfb18n50k
Abstract: No abstract text available
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB18N50K,
SiHFB18N50K
O-220
O-220
IRFB18N50KPbF
SiHFB18N50K-E3
IRFB18N50Ktrademarks
2011/65/EU
2002/95/EC.
2002/95/EC
irfb18n50k
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9Z34,
SiHF9Z34
O-220AB
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C
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34N80
OT-227
E153432
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34N80
Abstract: 125OC 34N8
Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C
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34N80
34N80
125OC
34N8
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EUPEC tt 162 n 16
Abstract: thyristor tt 142 n EUPEC tt 95 n EUPEC tt 250 n EUPEC tt 104 thyristor TT 95 N 1200 EUPEC tt 142 n 16 thyristor tt 162 n thyristor tt 61 N 1200 thyristor tt 95
Text: Phase control thyristor modules eupec Type / ¡2dt Itavm ^ c V TO> It (di/dt cr (dv/dt)cr Rtwc tvj = tv, = tv, max tvj max DIN typ. IEC 747-6 DIN IEC 747-6 180°el sin. V mQ A/|liS us V /jlS V drm V It r m s m Itsm MTE D 34 G 32 T 7 00 D 0115 T 31 m • UPZCf
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34G32lÃ
00D0115
180-el
EUPEC tt 162 n 16
thyristor tt 142 n
EUPEC tt 95 n
EUPEC tt 250 n
EUPEC tt 104
thyristor TT 95 N 1200
EUPEC tt 142 n 16
thyristor tt 162 n
thyristor tt 61 N 1200
thyristor tt 95
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1SS290
Abstract: No abstract text available
Text: Diode, switching, leaded 1SS290 Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHO Dt BAND ¿ O .d iO . ! Features J • available in DO-34 package • part marking, see following table
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1SS290
DO-34
1SS290
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tw12n
Abstract: BSTC0326S6 eupec FZ 800 R 16 BSTD0313S6 eupec FZ 900 R 16 TW11N BSTD0313 tw12n 1000 BSTD0366S6 TW7N
Text: Type b lE EUPEC Low power thyristors V drm It r m s m / i 2dt Itsm 34 03 HT 7 D 000 134 0 037 Itav m ^ c V TO It (di/dt)cr *q (dv/dt)cr Von Ig t typ. DIN tvj = 25 °C t vj I EC 747-6 2 5 DC sinus V mA °C/W R ,h jc IUPEC Wj max Outline V r r m 10 V A ms,
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34G3HT7
tw12n
BSTC0326S6
eupec FZ 800 R 16
BSTD0313S6
eupec FZ 900 R 16
TW11N
BSTD0313
tw12n 1000
BSTD0366S6
TW7N
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Untitled
Abstract: No abstract text available
Text: International i“R Rectifier 4Ö55452 00 15 7 4 2 34=ï • INR PD-9.637C IRFRC20 IRFUC20 HEXFET Power M O SFET • • • • • • • INTERNATIONAL Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFRC20 Straight Lead (IRFUC20) Available in Tape & Reel
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IRFRC20
IRFUC20
IRFRC20)
IRFUC20)
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Untitled
Abstract: No abstract text available
Text: □ IXYS H H ifl JL æ* X HiPerFET Power MOSFETs Single DieMOSFET ix f n 34N80 v , DSS ^D25 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr R DS on = 800 V = 34 A = 0.24 Q trr < 250 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions
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34N80
OT-227
E153432
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