IRFB18N50KPbF
Abstract: IRFB18N50K SiHFB18N50K SiHFB18N50K-E3
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB18N50K,
SiHFB18N50K
O-220
18-Jul-08
IRFB18N50KPbF
IRFB18N50K
SiHFB18N50K-E3
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S8056
Abstract: No abstract text available
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB18N50K,
SiHFB18N50K
O-220
O-220
IRFB18N50KPbF
SiHFB18N50K-E3
IRFB18N50Kmerchantability,
12-Mar-07
S8056
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irfb18n50k
Abstract: No abstract text available
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB18N50K,
SiHFB18N50K
O-220
O-220
IRFB18N50KPbF
SiHFB18N50K-E3
IRFB18N50Ktrademarks
2011/65/EU
2002/95/EC.
2002/95/EC
irfb18n50k
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AN609
Abstract: IRFB18N50K SiHFB18N50K
Text: IRFB18N50K_RC, SiHFB18N50K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFB18N50K
SiHFB18N50K
AN609,
16-Apr-10
AN609
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Untitled
Abstract: No abstract text available
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB18N50K,
SiHFB18N50K
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SiHFB18N50K
Abstract: SiHFB18N50K-E3 IRFB18N50K
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFB18N50K,
SiHFB18N50K
O-220
18-Jul-08
SiHFB18N50K-E3
IRFB18N50K
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Untitled
Abstract: No abstract text available
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB18N50K,
SiHFB18N50K
O-220
O-220
IRFB18N50KPbF
SiHFB18N50K-E3
IRFB18N50Khay
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFB18N50K,
SiHFB18N50K
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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