BCR108S
Abstract: BG3230 BG3230R mosfet 2g2 marking code 4D marking G2s
Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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BG3230
BG3230R
BG3230
OT363
BCR108S
BG3230R
mosfet 2g2
marking code 4D
marking G2s
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Untitled
Abstract: No abstract text available
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
VPS05604
BG3130R
EHA07461
BG3130
OT363
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marking K1 sot363
Abstract: No abstract text available
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
BG3130R
EHA07461
OT363
OT363
marking K1 sot363
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BG3130
Abstract: BG3130R VPS05604 3D SOT363
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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BG3130.
VPS05604
BG3130
BG3130R
EHA07461
OT363
Feb-27-2004
BG3130
BG3130R
VPS05604
3D SOT363
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Untitled
Abstract: No abstract text available
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
BG3130R
OT363
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BCR108S
Abstract: BG3130 BG3130R 3D SOT363 marking K1 sot363
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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Original
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BG3130.
BG3130
BG3130R
OT363
18may
BCR108S
BG3130
BG3130R
3D SOT363
marking K1 sot363
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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Original
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BG3130.
BG3130
VPS05604
BG3130R
EHA07461
BG3130
OT363
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PDF
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BCR108S
Abstract: BG3130 BG3130R
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
BG3130R
OT363
BCR108S
BG3130
BG3130R
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PDF
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BG3430R
Abstract: Marking G2 BCR108S
Text: BG3430R DUAL N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages of 4 5 6 UHF and VHF tuners • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High gain, low noise figure, high AGC-range
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BG3430R
OT363
BG3430R
Marking G2
BCR108S
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G2 marking
Abstract: BG3140R
Text: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance
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BG3140.
BG3140
BG3140R
OT363
G2 marking
BG3140R
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BG5120K
Abstract: BCR108S
Text: BG5120K Dual N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range
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BG5120K
OT363
BG5120K
BCR108S
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Untitled
Abstract: No abstract text available
Text: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction
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BG5120K
OT363
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BCR108S
Abstract: BG5120K k914
Text: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction
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BG5120K
OT363
BCR108S
BG5120K
k914
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Data sheet status Product specification date of issue April 1995 FEATURES • Short channel transistor with high ratio IVfsi^Cis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143R microminiature
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BF998R
OT143R
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br 8764
Abstract: marking 822 sot363 6710 mosfet sp 9753 BF1214 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
Text: BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable
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BF1214
BF1214
OT363
br 8764
marking 822 sot363
6710 mosfet
sp 9753
sc 6700
N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
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TRANSISTOR mosfet BF998
Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
Text: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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OCR Scan
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BF998
OT143
MCB346
MCB345
TRANSISTOR mosfet BF998
BF998 depletion
UCB343
dual gate mosfet
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Transistor BF988
Abstract: BF988 bf988 philips semiconductor PHILIPS MOSFET MARKING philips bf988 dual gate fet MC3344 mosfet 440 mhz dual gate mosfet in vhf amplifier dual gate
Text: • 711082b QQb7SbM 2Ö4 IPHIN Philips Semiconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfs • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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OCR Scan
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711082b
BF988
Transistor BF988
BF988
bf988 philips semiconductor
PHILIPS MOSFET MARKING
philips bf988
dual gate fet
MC3344
mosfet 440 mhz
dual gate mosfet in vhf amplifier
dual gate
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PHILIPS MOSFET MARKING
Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
Text: • ^53^31 aG23b34 Mbl ■ APX N AMER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification date of issue April 1991 FEATURES • Short channel transistor with high ratio |YfS I/C* • Low noise gain controlled amplifier to 1 GHz.
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OCR Scan
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BF998
OT143
PHILIPS MOSFET MARKING
BF998
TRANSISTOR mosfet BF998
dual gate mosfet
n-channel dual gate
mcb351
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NTE455
Abstract: nte455 MOSFET G2DG1 nte455 data sheet dual-gate
Text: NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Transistor MOSFET Description: The NTE455 is an N−Channel silicon dual−gate MOSFET designed for use as an RF amplifier in UHF TV tuners. This device is especially recommended for use in half wave length resonator type tuners.
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NTE455
NTE455
900MHz
nte455 MOSFET
G2DG1
nte455 data sheet
dual-gate
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bf998 Mop
Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Text: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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75bEb
6F998
OT143
bf998 Mop
BF998
marking t54
PHILIPS MOSFET MARKING
PHILIPS MOSFET
mcb349
dual gate fet
N-channel dual-gate MOS-FET for tv
DUAL GATE MOS-FET
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varicap diodes
Abstract: BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna
Text: AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 Power Module for AMPS Mobile PF0040 Power Module for AMPS Mobile PF0042 Power Module for EAMPS Mobile PF0045A Power Module for AMPS Handheld PF0065 Power Module for AMPS Handheld PF0065A Power Module for AMPS Handheld
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PF0032
PF0040
PF0042
PF0045A
PF0065
PF0065A
HWCA602
HWCB602
HWCA606
HWCB606
varicap diodes
BIPOLAR TRANSISTOR
dual gate mosfet in vhf amplifier
hitachi SAW Filter
gsm module with microcontroller
p channel mosfet
Transistors mosfet p channel
Mosfet transistor hitachi
Low frequency power transistor
vhf fet lna
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K 2611 MOSFET
Abstract: mosFET K 2611 m4t made K 2611 MOSFET VOLTAGE RATING BF1215 N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER
Text: BF1215 Dual N-channel dual gate MOSFET Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.
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BF1215
BF1215
OT363
K 2611 MOSFET
mosFET K 2611
m4t made
K 2611 MOSFET VOLTAGE RATING
N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER
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Untitled
Abstract: No abstract text available
Text: BF1215 Dual N-channel dual gate MOSFET Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.
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BF1215
BF1215
OT363
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Untitled
Abstract: No abstract text available
Text: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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OCR Scan
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0023k.
BF998R
lYfSI/C15.
OT143R
bbS3T31
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