Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27801-1E ASSP For Power Management Applications Mobile Phones Power Management IC for GSM Mobile Phone MB3891 • DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all
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DS04-27801-1E
MB3891
MB3891
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RR40-41
Abstract: F0007 MB3891 MB3891PFV sim 28
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27801-1E ASSP For Power Management Applications Mobile Phones Power Management IC for GSM Mobile Phone MB3891 • DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all
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DS04-27801-1E
MB3891
MB3891
F0007
RR40-41
F0007
MB3891PFV
sim 28
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PDF
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F0007
Abstract: MB3891 MB3891PFV
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27801-1E ASSP For Power Management Applications Mobile Phones Power Management IC for GSM Mobile Phone MB3891 • DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all
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DS04-27801-1E
MB3891
MB3891
F0007
MB3891PFV
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GSM repeater circuit
Abstract: repeater gsm circuit GSM repeater power amplifier module dual gsm repeater repeater gsm gsm repeater LMV242
Text: April 2004 LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller General Description Features The LMV242 is a power amplifier PA controller intended for use within an RF transmit power control loop in GSM/GPRS mobile phones. The LMV242 supports all single-supply PA’s
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LMV242
LMV242
GSM repeater circuit
repeater gsm circuit
GSM repeater power amplifier module
dual gsm repeater
repeater gsm
gsm repeater
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Untitled
Abstract: No abstract text available
Text: LMS6002D Multi-band Multi-standard Transceiver with Integrated Dual DACs and ADCs SUMMARY FEATURES TXINI TXINQ • 2 DEMUX TXD[11:0] 12 TX_IQ_SEL Femtocell and Picocell base stations Repeaters Broadband wireless communication devices for WCDMA/HSPA, LTE, GSM, CDMA2000, IEEE 802.16x
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LMS6002D
CDMA2000,
LMS6002D
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NE5520379A
Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5520379A
NE5520379A
NE5520379A-T1
NE5520379A-T1A
VP215
ldmos nec
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NE5520379A
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5520379A
NE5520379A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5520379A
NE5520379A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5520379A
NE5520379A
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Untitled
Abstract: No abstract text available
Text: Dual, 16-Bit, 1600 MSPS, TxDAC+ Digital-to-Analog Converter AD9142A Data Sheet FEATURES GENERAL DESCRIPTION Supports input data rate up to 575 MHz Very small inherent latency variation: <2 DAC clock cycles Proprietary low spurious and distortion design 6-carrier GSM ACLR = 79 dBc at 200 MHz IF
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16-Bit,
AD9142A
16-bit
72-Lead
CP-72-7)
AD9142ABCPZ
AD9142ABCPZRL
AD9142A-M5372-EBZ
AD9142A-M5375-EBZ
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D13P
Abstract: AD9142 10930-10 adl537x
Text: Dual, 16-Bit, 1600 MSPS, TxDAC+ Digital-to-Analog Converter AD9142 Data Sheet FEATURES GENERAL DESCRIPTION Very small inherent latency variation: <2 DAC clock cycles Proprietary low spurious and distortion design 6-carrier GSM ACLR = 79 dBc at 200 MHz IF SFDR > 85 dBc bandwidth = 300 MHz at ZIF
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16-bit
AD9142BCPZ
AD9142BCPZRL
AD9142-M5372-EBZ
AD9142-M5375-EBZ
72-lead
ADL5372
ADL5375
CP-72-7
D13P
AD9142
10930-10
adl537x
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Untitled
Abstract: No abstract text available
Text: Dual, 16-Bit, 1600 MSPS, TxDAC+ Digital-to-Analog Converter AD9142A Data Sheet FEATURES GENERAL DESCRIPTION Supports input data rate up to 575 MHz Very small inherent latency variation: <2 DAC clock cycles Proprietary low spurious and distortion design 6-carrier GSM ACLR = 79 dBc at 200 MHz IF
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16-Bit,
AD9142A
16-bit
72-Lead
CP-72-7)
AD9142ABCPZ
AD9142ABCPZRL
AD9142A-M5372-EBZ
AD9142A-M5375-EBZ
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DCS Automation PDF Notes
Abstract: 0897/1747 gsm repeater vt 1202 GSM repeater circuit VC-24 VC-2R8A24-0897
Text: FUJITSU MEDIA DEVICE DATA SHEET DS04-21713-1E ASSP for Mobile Telephone VCO 800 to 2000 MHz VC-24 Series • DESCRIPTION With excellent C/N characteristics and low current consumption, this VCO series is suitable for use with GSM and DCS and is ideal to miniaturize dual-band mode products. The VC-24 series can be used in any frequency band
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VC-24
DCS Automation PDF Notes
0897/1747
gsm repeater
vt 1202
GSM repeater circuit
VC-2R8A24-0897
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0897/1747
Abstract: VC-24 vco gsm
Text: FUJITSU MEDIA DEVICE DATA SHEET DS04-21713-1E ASSP for Mobile Telephone VCO 800 to 2500 MHz VC-24 Series • DESCRIPTION With excellent C/N characteristics and low current consumption, this VCO series is suitable for use with GSM and DCS and is ideal to miniaturize dual-band mode products. The VC-24 series can be used in any frequency band
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VC-24
0897/1747
vco gsm
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dual gsm repeater
Abstract: GSM repeater circuit GSM band selective repeater Leaky Feeder gsm repeater HPFO multi-band radio frequency
Text: System Specifications Sheet SUCOceed HPFOR REPEATER TUNNEL COVERAGE SYSTEMS FOR MULTI BAND APPLICATIONS System Features Typical System Layout Its high output power, multiple carrier capability, modular design, and multi-band support make the High Power
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RF Hitec
Abstract: 455KHz notch filter 30 MHz crystal notch filter Ceramic Filters Low Pass 5MHz LC Band Pass Filter band pass filter 10.7mhz RHF-1950R20 RHF-897.2R GSM RHF-935-25A IMT-2000
Text: CAVITY FILTER Cellular/ GSM IMT2000/ WLL FILTER ISO9001 Certified V. 1.8 [FEATURES] Application for Base Stations, Repeaters Low Insertion Loss High Attenuation Custom Design and Development is available GSM Cellular ❍ ❍ ❍ ❍ Model Frequency Range
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IMT2000/
ISO9001
RHF-840R10A
RHF-836R25A
RHF-897
RHDUP-890-25A
RHF-935-25A
20MHz
10MHz)
RF Hitec
455KHz notch filter
30 MHz crystal notch filter
Ceramic Filters Low Pass
5MHz LC Band Pass Filter
band pass filter 10.7mhz
RHF-1950R20
RHF-897.2R GSM
RHF-935-25A
IMT-2000
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lv 1083
Abstract: No abstract text available
Text: LMS6002D Multi-band Multi-standard Transceiver with Integrated Dual DACs and ADCs SUMMARY FEATURES TXINI TXINQ • 2 DEMUX TXD[11:0] TX_IQ_SEL 12 APPLICATIONS Femtocell and Picocell base stations Repeaters Broadband wireless communication devices for
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CDMA2000,
LMS6002D
lv 1083
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dual gsm repeater
Abstract: gsm repeater GSM repeater circuit SKY65330 Base Station subsystem DCS1800 EGSM900 PCS1900
Text: PRODUCT SUMMARY SKY65330: Tx/Rx Front-End Module with Integrated Coupler for Quad-Band GSM and EDGE Applications Applications • Quad-band femto base stations and cellular repeaters for GSM850, EGSM900, DCS1800, and PCS1900 bands Features • High efficiency
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SKY65330:
GSM850,
EGSM900,
DCS1800,
PCS1900
40-pin,
J-STD-020)
SKY65330
00926A
dual gsm repeater
gsm repeater
GSM repeater circuit
Base Station subsystem
DCS1800
EGSM900
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PF08103B
Abstract: GSM repeater circuit GSM 900 mhz repeater circuit DCS1800 E-GSM900 GSM900 PF08103B equivalent
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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BLO1RN1A
Abstract: dual gsm repeater DCS1800 PF08107BP
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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GSM repeater circuit
Abstract: PF08109B dual gsm repeater DCS1800 pf08109
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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PF08114B
Abstract: dual gsm repeater pf08114 GSM repeater DCS1800 GSM900 GSM repeater circuit BLO1RN1-A62-001 GSM 900 mhz repeater circuit
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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dual gsm repeater
Abstract: HMCAD1512
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK A Selection of Hittite Components for Cellular Infrastructure Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation
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HMC920LP5E
HMC374SC70E
HMC617LP3E
HMC618LP3E
HMC636ST89E
HMC616LP3E
dual gsm repeater
HMCAD1512
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Untitled
Abstract: No abstract text available
Text: i FUJITSU SEMICONDUCTOR 11 = DATA SHEET . D S 0 4 -2 3 1 1 3 -1 E ASSP Mobile Communication Systems • DESCRIPTION The S2 type of SAW bandpass filters are named “Soft SAW” because of their performance.
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F9703
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