Untitled
Abstract: No abstract text available
Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 6105D K8 /Subject (5A, 30V, 0.050 Ohm, Dual NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Dual NChannel,
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HUF76105DK8
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iss314
Abstract: log sheet air conditioning Schottky Diode 40V 5A dual Schottky Diode 40V 5A MLP832 ZXMNS3BM832
Text: ZXMNS3BM832 MPPS Miniature Package Power Solutions 30V N Channel MOSFET & 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY N Channel MOSFET- V BR DSS =30V; RSAT(on) =0.18 ; D = 2.7A Schottky Diode - VR = 40V; VF = 500mV (@1A); IC=1A DESCRIPTION Packaged in the new innovation 3mm x 2mm MLP this combination dual
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ZXMNS3BM832
500mV
iss314
log sheet air conditioning
Schottky Diode 40V 5A dual
Schottky Diode 40V 5A
MLP832
ZXMNS3BM832
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Untitled
Abstract: No abstract text available
Text: FDS6990S Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
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FDS6990S
FDS6990S
FDS6990A
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Abstract: No abstract text available
Text: FDS6990AS Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
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FDS6990AS
FDS6990AS
FDS6990A
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FDS6990S
Abstract: FDS6990A
Text: FDS6990S Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
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FDS6990S
FDS6990S
FDS6990A
FDS6990A
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MOSFET and parallel Schottky diode
Abstract: CBVK741B019 F011 F63TNR F852 FDS6990A FDS6990S FDS9953A L86Z
Text: FDS6990S Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
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FDS6990S
FDS6990S
FDS6990A
MOSFET and parallel Schottky diode
CBVK741B019
F011
F63TNR
F852
FDS6990A
FDS9953A
L86Z
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MDS5651
Abstract: mds565 60V dual N-Channel trench mosfet mosfet gate source voltage 20v trench mosfet MOSFET N
Text: Dual N-Channel Trench MOSFET 30V, 7.5A, 26mΩ General Description Features The MDS5651 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability VDS = 30V ID = 7.5A @VGS = 10V
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MDS5651
MDS5651
mds565
60V dual N-Channel trench mosfet
mosfet gate source voltage 20v
trench mosfet
MOSFET N
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FDS8858CZ
Abstract: fds8858
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
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FDS8858CZ
FDS8858CZ
fds8858
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FDS8858CZ
Abstract: fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
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FDS8858CZ
FDS8858CZ
fds8858
DUAL N-CHANNEL POWERTRENCH MOSFET
q2180
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FDS8858
Abstract: No abstract text available
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
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FDS8858CZ
FDS8858
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V
Abstract: No abstract text available
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
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FDS8858CZ
FDS8858CZ
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V
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MOSFET NOTEBOOK
Abstract: FDMS9600S Q235
Text: FDMS9600S tm Dual N-Channel PowerTrench MOSFET Q1: 30V, 32A, 8.5mΩ Q2: 30V, 30A, 5.5mΩ Features General Description Q1: N-Channel This device includes two specialized MOSFETs in a unique dual Max rDS on = 8.5mΩ at VGS = 10V, ID = 12A Power 56 package.
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FDMS9600S
FDMS9600S
MOSFET NOTEBOOK
Q235
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MOSFET NOTEBOOK
Abstract: FDMS9600S
Text: FDMS9600S tm Dual N-Channel PowerTrench MOSFET Q1: 30V, 32A, 8.5mΩ Q2: 30V, 30A, 5.5mΩ Features General Description Q1: N-Channel This device includes two specialized MOSFETs in a unique dual Max rDS on = 8.5mΩ at VGS = 10V, ID = 12A Power 56 package.
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FDMS9600S
FDMS9600S
MOSFET NOTEBOOK
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FDMS9620S
Abstract: MOSFET NOTEBOOK
Text: FDMS9620S tm Dual N-Channel PowerTrench MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ Features General Description Q1: N-Channel This device includes two specialized MOSFETs in a unique dual Max rDS on = 21.5mΩ at VGS = 10V, ID = 7.5A Power 56 package.
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FDMS9620S
FDMS9620S
MOSFET NOTEBOOK
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Untitled
Abstract: No abstract text available
Text: AP4224GM-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Dual N MOSFET Package G2 S2 ▼ RoHS Compliant & Halogen-Free SO-8 S1 BVDSS 30V
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AP4224GM-HF
100ms
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ao4914
Abstract: No abstract text available
Text: AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1 N-Channel excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous
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AO4914
AO4914
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Abstract: No abstract text available
Text: AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1 N-Channel excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous
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AO4914
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Untitled
Abstract: No abstract text available
Text: AO4916 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4916 uses advanced trench technology to provide Q1 N-Channel excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous
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AO4916
AO4916
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FDMS9620S
Abstract: No abstract text available
Text: FDMS9620S Dual N-Channel PowerTrench MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ Features Q1: N-Channel General Description Max rDS on = 21.5mΩ at VGS = 10V, ID = 7.5A This device includes two specialized MOSFETs in a unique dual Max rDS(on) = 29.5mΩ at VGS = 4.5V, ID = 6.5A
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S2DNF30L
Abstract: JESD97 STS2DNF30L
Text: STS2DNF30L Dual N-channel 30V - 0.09Ω - 3A SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS2DNF30L 30V <0.011Ω 3A • Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Description This Power MOSFET is the latest development of
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S2DNF30L
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S2DNF30L
Abstract: STS2DNF30L JESD97
Text: STS2DNF30L Dual N-channel 30V - 0.09Ω - 3A SO-8 STripFET Power MOSFET Features Type VDSS RDS on ID STS2DNF30L 30V <0.11Ω 3A • Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Description This Power MOSFET is the latest development of
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STS2DNF30Land
S2DNF30L
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Untitled
Abstract: No abstract text available
Text: STS2DNF30L Dual N-channel 30V - 0.09Ω - 3A SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS2DNF30L 30V <0.011Ω 3A • Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Description This Power MOSFET is the latest development of
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STS2DNF30L
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FDMS9620S
Abstract: DUAL N-CHANNEL POWERTRENCH MOSFET fdms9620s I-34
Text: FDMS9620S tm Dual N-Channel PowerTrench MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ Features Q1: N-Channel General Description Max rDS on = 21.5mΩ at VGS = 10V, ID = 7.5A This device includes two specialized MOSFETs in a unique dual Max rDS(on) = 29.5mΩ at VGS = 4.5V, ID = 6.5A
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FDMS9620S
FDMS9620S
DUAL N-CHANNEL POWERTRENCH MOSFET fdms9620s
I-34
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Untitled
Abstract: No abstract text available
Text: RF1K49088 HARRIS S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 3.5A, 30V The RF1K49088 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This
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RF1K49088
RF1K49088
42e-9
1e-30
02e-3
98e-6)
50e-3
70e-6)
53e-3
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