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    DUAL P-CHANNEL 30V DS MOSFET Search Results

    DUAL P-CHANNEL 30V DS MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL P-CHANNEL 30V DS MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP2625GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Low Gate Drive -30V R DS ON 185mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description S2


    Original     		AP2625GY-HF-3 OT-26 OT-26 12REF 37REF 90REF 20REF 95REF PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP2623GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Low Gate Charge D2 D1 Low On-resistance BV DSS -30V R DS ON 170mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description


    Original     		AP2623GY-HF-3 OT-26 OT-26 12REF 37REF 90REF 20REF 95REF PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP3028LSD 30V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Description • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(ON and yet maintain superior switching Mechanical Data V(BR)DS


    Original     		DMP3028LSD DS35966 PDF

    Full-bridge inverter

    Abstract: SSM9930M
    Text: SSM9930M DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Low on-resistance Full-bridge applications, such as N-CH P2G N2D/P2D P1S/P2S P1G LCD monitor inverter N1D/P1D SO-8 30V R DS ON 33mΩ 6.3A ID N2G N1S/N2S BV DSS P-CH


    Original     		SSM9930M SSM9930M Full-bridge inverter PDF

    4957agm

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4957AGM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low On-resistance R DS ON 26mΩ Fast Switching Performance ID -7.4A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2


    Original     		AP4957AGM-HF-3 AP4957AGM-HF-3 AP4957A 4957AGM 4957agm PDF

    4957gm

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4957GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low On-resistance R DS ON 24mΩ Fast Switching Performance ID -7.7A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2 S1


    Original     		AP4957GM-HF-3 AP4957GM-HF-3 AP4957 4957GM 4957gm PDF

    STS3DPF30L

    Abstract: No abstract text available
    Text: STS3DPF30L DUAL P - CHANNEL 30V - 0.145Ω - 3A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS3DPF30L • ■ ■ V DSS R DS on ID 30 V < 0.16 Ω 3A TYPICAL RDS(on) = 0.145 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE


    Original     		STS3DPF30L STS3DPF30L PDF

    SSM4957M

    Abstract: ssm4957gm
    Text: SSM4957 G M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 Lower gate charge D1 D1 Fast switching characteristics SO-8 -30V BV DSS D2 G1 S1 R DS(ON) 24mΩ ID -7.7A G2 S2 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the


    Original     		SSM4957 SSM4957M SSM4957GM. ssm4957gm PDF

    DUAL P

    Abstract: STS3DPF30L max8823
    Text: STS3DPF30L  DUAL P - CHANNEL 30V - 0.145Ω - 3A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS3DPF30L • ■ ■ V DSS R DS on ID 30 V < 0.16 Ω 3 A TYPICAL RDS(on) = 0.145 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE


    Original     		STS3DPF30L DUAL P STS3DPF30L max8823 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4953GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low Gate Charge R DS ON 53mΩ Fast Switching Performance ID -5A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2 S1 Advanced Power MOSFETs from APEC provide the designer with


    Original     		AP4953GM-HF-3 AP4953GM-HF-3 AP4953 4953GM PDF

    Untitled

    Abstract: No abstract text available
    Text: SSG4931 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 4.5A - 30V 1 75 @VGS = - 5V 90 @VGS = - 4.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable.


    Original     		SSG4931 PDF

    SSM4953

    Abstract: No abstract text available
    Text: SSM4953 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (mΩ) Max 7 6 5 60 @VGS = -10V -4.5A -30V SO-8 8 1 2 95 @VGS = -4.5V 3 4 D2 (5, 6) D1 (7, 8) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable.


    Original     		SSM4953 SSM4953 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM4931 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 5.5A - 30V 1 70 @VGS = - 5V 2 80 @VGS = - 4.5V 3 4 D2 (5, 6) D1 (7, 8) FEATURES Super high dense cell design for low R DS(ON). G1 (2)


    Original     		SSM4931 PDF

    SSM4935

    Abstract: No abstract text available
    Text: SSM4935A Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 RDS(ON) (mΩ) Max 8 7 25 @VGS = - 10V - 7.5A - 30V 45 @VGS = - 5V 1 2 3 60 @VGS = - 4.5V 6 5 4 D2 (5, 6) D1 (7, 8) FEATURES Super high dense cell design for low R DS(ON).


    Original     		SSM4935A SSM4935 PDF

    4953p

    Abstract: AF4953P
    Text: AF4953P Dual P-Channel 30-V D-S MOSFET „ Features „ General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack


    Original     		AF4953P 015x45 4953p AF4953P PDF

    4953P

    Abstract: AF4953P mosfet 4953 SECT10
    Text: AF4953P Dual P-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack


    Original     		AF4953P 015x45 4953P AF4953P mosfet 4953 SECT10 PDF

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 PDF

    IRF7509PBF

    Abstract: IRF7509 IRF P CHANNEL MOSFET IRF7501
    Text: PD - 95397 IRF7509PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 N-CHANNEL MOSFET


    Original     		IRF7509PbF EIA-481 EIA-541. IRF7509PBF IRF7509 IRF P CHANNEL MOSFET IRF7501 PDF

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


    Original     		CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95397 IRF7509PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 G1 S2 G2 N-CHANNEL MOSFET


    Original     		IRF7509PbF EIA-481 EIA-541. PDF

    STripFET

    Abstract: STS3DPFS30L
    Text: STS3DPFS30L P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V <0.16Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		STS3DPFS30L STripFET STS3DPFS30L PDF

    STS3DPFS30L

    Abstract: No abstract text available
    Text: STS3DPFS30L  P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V <0.16Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		STS3DPFS30L STS3DPFS30L PDF

    8SS138

    Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
    Text: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T


    OCR Scan     		TN0205AD* TN0200T OT-363 OT-23 BSH105 GF6968A GF6968E GF9926 GF4126 8SS138 GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n PDF

    SSD2007

    Abstract: LS125A mosfet n-channel 12 amperes Power MOSFET 50V 20A
    Text: DUAL N-CHANNEL POWER MOSFET SSD2007 FEATURES • Extremely Lower R 8SOIC ds o ni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		SSD2007 SSD2007 250eA LS125A mosfet n-channel 12 amperes Power MOSFET 50V 20A PDF