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    DUAL TRANSISTOR SOT23 Search Results

    DUAL TRANSISTOR SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL TRANSISTOR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LS3550A MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS3550A is a monolithic pair of PNP transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original     		PDF LS3550A LS3550A OT-23 OT-23

    ZDT1049

    Abstract: ZXT12N50DX NPN SOT23-6 sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 zdt705 transistor PNP 5 w ZDT751 DUAL TRANSISTOR
    Text: Multichip Devices Dual Transistor Combinations Various transistor combinations have been developed to meet our customers requirements for reduced component count and smaller packaging, including dual transisitors and traditional H-bridge configurations consisting of two NPN and two


    Original     		PDF ZDT1147 ZXTD1M832 ZXT12P12DX ZXTD6717E6 ZXTDAM832 ZXTDA1M832 ZDT717 ZDT617 ZDT1048 ZXTDBM832 ZDT1049 ZXT12N50DX NPN SOT23-6 sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 zdt705 transistor PNP 5 w ZDT751 DUAL TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


    Original     		PDF LMUN5311DW1T1G LMUN5311DW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LS302 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS302 is a monolithic pair of high voltage SuperBeta NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring


    Original     		PDF LS302 OT-23 OT-23

    Si4539DY

    Abstract: SOIC-16
    Text: Si4539DY Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF Si4539DY SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDS8928A

    Untitled

    Abstract: No abstract text available
    Text: June 1998 FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDS8958A

    8928a

    Abstract: SOIC-16 FDS8928A
    Text: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDS8928A FDS8928A 8928a SOIC-16

    PMGD290XN

    Abstract: No abstract text available
    Text: PMGD290XN Dual N-channel µTrenchMOS extremely low level FET Rev. 01 — 26 February 2004 MBD128 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.


    Original     		PDF PMGD290XN MBD128 OT363 SC-88) PMGD290XN

    Untitled

    Abstract: No abstract text available
    Text: LS120 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT120 The LS120 is a monolithic pair of NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original     		PDF LS120 IT120 OT-23 IT120.

    PMGD400UN

    Abstract: No abstract text available
    Text: PMGD400UN Dual N-channel µTrenchMOS ultra low level FET Rev. 01 — 3 March 2004 MBD128 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PMGD400UN MBD128 OT363 SC-88) PMGD400UN

    SOT363 MARKING CODE 7M

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5211DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These


    Original     		PDF LMUN5211DW1T1G LMUN5211DW1T1 SOT363 MARKING CODE 7M

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These


    Original     		PDF LMUN5111DW1T1G

    SOT23-6L

    Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6
    Text: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original     		PDF STN6561 STN6561 OT-23-6L lSTN6561 ST2300 SOT23-6L SOT-23-6L CA SOT 25 marking 6l IDM-10 N -Channel power Sot 6

    NDS9925A

    Abstract: SOIC-16 8G24
    Text: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF NDS9925A OT-23 NDS9925A SOIC-16 8G24

    FDS8934A

    Abstract: SOIC-16
    Text: May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS8934A OT-23 FDS8934A SOIC-16

    NDS9945

    Abstract: SOIC-16 OC601
    Text: May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS9945 OT-23 NDS9945 SOIC-16 OC601

    NDS9955

    Abstract: SOIC-16
    Text: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS9955 OT-23 NDS9955 SOIC-16

    9936A

    Abstract: FDS9936A SOIC-16
    Text: May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS9936A OT-23 9936A FDS9936A SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS8926A

    Untitled

    Abstract: No abstract text available
    Text: May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS8934A OT-23

    Untitled

    Abstract: No abstract text available
    Text: May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS9945 OT-23

    9936A

    Abstract: F852 FDS9936A L86Z SOIC-16 F011 F63TNR
    Text: May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS9936A OT-23 9936A F852 FDS9936A L86Z SOIC-16 F011 F63TNR

    fds8928

    Abstract: No abstract text available
    Text: F A I R C H I L D iM IC D N D U C T Q R J u ly 1 9 9 8 tm FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF FDS8928A fds8928