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    NDS9955 Price and Stock

    Fairchild Semiconductor Corporation NDS9955

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    Bristol Electronics NDS9955 1,125
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    Quest Components NDS9955 3,650
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    NDS9955 1,998
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    NDS9955 1,853
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    NDS9955 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS9955 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9955 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9955 National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9955 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9955 National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9955 National Semiconductor Power MOSFETS SOIC-8 Dual/Single DMOS Scan PDF

    NDS9955 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS9955

    Abstract: SOIC-16
    Text: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS9955 OT-23 NDS9955 SOIC-16

    1182

    Abstract: F011 F63TNR F852 L86Z NDS9955 SOIC-16 NDS9955 SO-8
    Text: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS9955 OT-23 1182 F011 F63TNR F852 L86Z NDS9955 SOIC-16 NDS9955 SO-8

    Untitled

    Abstract: No abstract text available
    Text: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS9955 OT-23

    0310S

    Abstract: NDS9955
    Text: N February 1996 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9955 NDS9955 0310S

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    18mv

    Abstract: No abstract text available
    Text: G FEATURINperature Range July 2000 Tem ommercial Extended C 70˚C to C 0˚ -2 ment dheld Equip an H e bl ta or for P ML4863 High Efficiency Flyback Controller GENERAL DESCRIPTION FEATURES The ML4863 is a flyback controller designed for use in multi-cell battery powered systems such as PDAs and


    Original     		PDF ML4863 ML4863 DS4863-01 18mv

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    LPE-6562 SERIES

    Abstract: mpp schematic ML4863 ML4863CS ML4863ES ML4863IS DS4863-01
    Text: G FEATURINperature Range July 2000 Tem ommercial Extended C 70˚C to C 0˚ -2 ment dheld Equip an H e bl ta or for P ML4863* High Efficiency Flyback Controller GENERAL DESCRIPTION FEATURES The ML4863 is a flyback controller designed for use in multi-cell battery powered systems such as PDAs and


    Original     		PDF ML4863* ML4863 DS4863-01 LPE-6562 SERIES mpp schematic ML4863CS ML4863ES ML4863IS DS4863-01

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    R4999-B

    Abstract: PC40ER14 Tektronix tds 210 4942 dual fet MMFD3N03 NDS9955 12v electronic transformer RECTIFIER LPE-6562 SERIES 12v transformer winding formula 25x10
    Text: DECEMBER 1995 Application Note 42031 Multiple Output Design Considerations for the ML4863 INTRODUCTION The ML4863 is designed for flyback operation with a minimum number of external components. High efficiency is maintained over a wide load range with the


    Original     		PDF ML4863 ML4863 R4999-B PC40ER14 Tektronix tds 210 4942 dual fet MMFD3N03 NDS9955 12v electronic transformer RECTIFIER LPE-6562 SERIES 12v transformer winding formula 25x10

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    ML4863CS

    Abstract: ML4863 mpp schematic 593D LPE-6562 LPT-4545 ML4863ES ML4863IS LPE-6562 SERIES transconductance amplifier
    Text: G FEATURINperature Range December 1998 Tem ommercial Extended C 70˚C to C 0˚ -2 ment dheld Equip an H e bl ta or for P ML4863 High Efficiency Flyback Controller GENERAL DESCRIPTION FEATURES The ML4863 is a flyback controller designed for use in multi-cell battery powered systems such as PDAs and


    Original     		PDF ML4863 ML4863 ML4863CS mpp schematic 593D LPE-6562 LPT-4545 ML4863ES ML4863IS LPE-6562 SERIES transconductance amplifier

    NDS9955

    Abstract: No abstract text available
    Text: February 1996 FAIRCHILD iM IC D N D U C T O R tm NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS9955 NDS99EE

    NDS9955

    Abstract: No abstract text available
    Text: February 1996 N NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel enhance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is


    OCR Scan     		PDF NDS9955 NDS9955 0D33347

    9955

    Abstract: 9955 a 9955 SO-8
    Text: May 1998 F A IR C H IL D EMICDNDUCTORi NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF NDS9955 9955 9955 a 9955 SO-8

    Untitled

    Abstract: No abstract text available
    Text: February 1996 N NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDS9955 NDS9955 193tQ

    NDS9955

    Abstract: No abstract text available
    Text: Na t i o n a l May 1996 Sem iconductor" NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9955 bSD1130 NDS9955

    601lt

    Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
    Text: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |


    OCR Scan     		PDF S8426A* NQS8426t NDS8425 NDS8926 NDS9925A NDS8410A NDS8410Î NDS9410A NOS8936 NDS9936 601lt Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9952A FDV302P

    NDS9435

    Abstract: NDS9945 NDS9410 NDS9430 NDS9400 NDS9405 NDS9407 NDS9947 NDS9948 NDS9955
    Text: D M fte c E T c / *• T> m bäE Power M OSFETS continued bSQ113G 003^4^3 OOT « N S C 5 SOIC-8 Dual/Single DMOS soice 81 NChannel NATL SEfllCOND rOS(on) (Volts) Min Device VGS= 10V Ves = 4.5V (DISCRETE) 1 •o Po (A) Max (Watts) Max Configuration Pin Out


    OCR Scan     		PDF bSQ113Q NDS9410* NDS9945 NDS9955 NDS9956 NDS9400* NDS9405* NDS9407* NDS9430* NDS9435* NDS9435 NDS9410 NDS9430 NDS9400 NDS9405 NDS9407 NDS9947 NDS9948

    Untitled

    Abstract: No abstract text available
    Text: April 1997 MgLMicro Linear ML4863 High Efficiency Flyback Controller GENERAL DESCRIPTION FEATURES The ML4863 is a flyback controller designed for use in multi-cell battery powered systems such as PDAs and notebook computers. The flyback topology is ideal for


    OCR Scan     		PDF ML4863 ML4863