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    DY TRANSISTOR Search Results

    DY TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DY TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WPCE773LA0DG

    Abstract: bg22 transistor G1454 TPS51125 9LPRS929 transistor bc47 9lprs9 BGA479-SKT-8-GP-U3 winbond wpce773la0dg transistor BG14
    Text: 5 4 3 2 SM30 Block Diagram D 1 SYSTEM DC/DC Project code: 91.4BT01.001 PCB P/N : 48.4BT01.001 Revision : 08239-SA Mobile CPU Penryn CLK GEN. 5V_S5 7A DCBATOUT PCB STACKUP SMSC 5V_AUX_S5 TOP SYSTEM DC/DC VCC INPUTS DDR3 LCD Cantiga 800/1033 12,13 MHz 1D05V_M(16A)


    Original     		PDF 4BT01 08239-SA TPS51125 318MHz 9LPRS929 EMC2103 TPS51124 667/800/1066MHz RT9026 WPCE773LA0DG bg22 transistor G1454 TPS51125 9LPRS929 transistor bc47 9lprs9 BGA479-SKT-8-GP-U3 winbond wpce773la0dg transistor BG14

    diode b1c

    Abstract: No abstract text available
    Text: SK 85 MH 10 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET L<BB LOBB Q< Q<W ?- G HI J$K 407,- %*8,23.-, -', .6.,+ ?- G HI ;SN> J$T M> *' X M &-T ?- G SN J$T M> ?Y Inverse diode SEMITOP 2 MOSFET Module Q] G @ Q< Q]W G @ Q<W ?Y Preliminary Data


    Original     		PDF

    WPCE773LA0DG

    Abstract: alc272x transistor r1009 TPS51125 9lprs9 100 N31 transistor SRN10KJ 9lprs929 ipad3 20D0
    Text: 5 4 3 2 SYSTEM DC/DC Project code: 91.4BT01.001 PCB P/N : 48.4BT01.001 Revision : 08239-SA SM30 Block Diagram D 1 Mobile CPU Penryn 5V_S5 7A DCBATOUT PCB STACKUP SMSC 5V_AUX_S5 TOP SYSTEM DC/DC VCC HOST BUS INPUTS DDR3 LCD Cantiga 800/1033 12,13 MHz 1D05V_M(16A)


    Original     		PDF 4BT01 08239-SA TPS51125 318MHz 9LPRS929 EMC2103 TPS51124 667/800/1066MHz RT9026 WPCE773LA0DG alc272x transistor r1009 TPS51125 9lprs9 100 N31 transistor SRN10KJ 9lprs929 ipad3 20D0

    MAX8778

    Abstract: ECE5021 EMC4001 MEC5025-NU ec isl6236 P26SD mec5025 ICS951463 25VF016 U107D
    Text: A B C D E Battery Charger ISL88731 Parker Block Diagram CPU Clock Generator ICS 951463 U1400 FW289 4 Intel Mobile CPU Yonah / Merom ULV FSB:533Mhz 4 HOST BUS U7500 JW620 +PBATT INPUTS OUTPUTS +PWR_SRC +VCC_CORE System DC/DC DDRII 533/667MHz RS600ME ISL6236/MAX8778


    Original     		PDF U1400 FW289 ISL88731 533Mhz 4S701 200-PIN 533/667MHz ADP3207 MAX8778 ECE5021 EMC4001 MEC5025-NU ec isl6236 P26SD mec5025 ICS951463 25VF016 U107D

    Untitled

    Abstract: No abstract text available
    Text: FQD4P40 P-Channel QFET MOSFET -400 V, -2.7 A, 3.1 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,


    Original     		PDF FQD4P40

    Untitled

    Abstract: No abstract text available
    Text: FQP12P10 P-Channel QFET MOSFET -100 V, -11.5 A, 290 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,


    Original     		PDF FQP12P10 FQP12P10

    Untitled

    Abstract: No abstract text available
    Text: FQT2P25 P-Channel QFET MOSFET -250 V, -0.55 A, 4.0 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,


    Original     		PDF FQT2P25 OT-223

    Untitled

    Abstract: No abstract text available
    Text: FQB9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state


    Original     		PDF FQB9P25

    Untitled

    Abstract: No abstract text available
    Text: FQP11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,


    Original     		PDF FQP11P06 FQP11P06

    orcad schematic symbol for rj45

    Abstract: EPSON C691 MAIN SB450 southbridge KB3910 U62A SCD1U25V3ZY-3GP WISTRON power sequence amp c49 100v 39p hy5ps561621a Wistron Corporation
    Text: 5 4 3 2 1 See 'TEXT' in 0MEMO or 1MEMO property in component Bolsena-E AB2 Block Diagram Dummy when use '10/100' Dummy when use 'GIGA' 200-PIN DDR SODIMM Dummy when use 'UMA' CLK GEN IDT CV1373 Dummy when use 'DIS' D AMD CPU Dummy when use 'IDE' HyperTransport


    Original     		PDF 200-PIN 4G401 05236-SA CV1373 5W/25W CP2211 CB1410 16b/8b RS482M 40V16 orcad schematic symbol for rj45 EPSON C691 MAIN SB450 southbridge KB3910 U62A SCD1U25V3ZY-3GP WISTRON power sequence amp c49 100v 39p hy5ps561621a Wistron Corporation

    KB3910

    Abstract: WISTRON power sequence 208017 SCD1U25V3ZY-3GP orcad schematic symbol for rj45 ATI SB450 MAX1909 M54-p C828 transistors Wistron Corporation
    Text: 5 4 3 2 1 See 'TEXT' in 0MEMO or 1MEMO property in component Bolsena-E AB2 Block Diagram Dummy when use '10/100' Dummy when use 'GIGA' 200-PIN DDR SODIMM Dummy when use 'UMA' CLK GEN IDT CV1373 Dummy when use 'DIS' D AMD CPU Dummy when use 'IDE' HyperTransport


    Original     		PDF 200-PIN 4G401 05236-SA CV1373 5W/25W CP2211 CB1410 16b/8b RS482M 40V16 KB3910 WISTRON power sequence 208017 SCD1U25V3ZY-3GP orcad schematic symbol for rj45 ATI SB450 MAX1909 M54-p C828 transistors Wistron Corporation

    winbond wpce773la0dg

    Abstract: VT1702S G1454R41U ICS9LPRS480BKLFT SCD1U25V3KX-GP MMBT3904-4-GP c5696 WPCE773LA0DG 1gp transistor winbond 25x16
    Text: 5 4 3 2 SJM50-PU Block Diagram 1 SYSTEM DC/DC Project code: 91.4FC01.001 PCB P/N : 48.4FC01.0SB REVISION : 08256-SB 40 TPS51125 INPUTS OUTPUTS 5V_S5 8A 3D3V_S5(6A) 5V_AUX_S5 DCBATOUT D AMD Giffin CPU S1G2 (35W) Thermal Sensor CLK GEN. SMSC 31 Video RAM 4,5,6,7


    Original     		PDF SJM50-PU 4FC01 08256-SB TPS51125 TPS51124 EMC2103 ICS9LPRS480BKLFT 638-Pin uFCPGA638 winbond wpce773la0dg VT1702S G1454R41U ICS9LPRS480BKLFT SCD1U25V3KX-GP MMBT3904-4-GP c5696 WPCE773LA0DG 1gp transistor winbond 25x16

    WPCE773LA0DG

    Abstract: TPS51125 Atheros AR8131 WISTRON power sequence RT8202 Realtek ALC269Q High Definition Audio NDS0610-NL-GP X-14D31818M-35GP Wistron Corporation winbond wpce773la0dg
    Text: 5 4 3 JM41 Block Diagram Intel D CLK GEN. 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SA REVISION : 08266-SA 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 PCB STACKUP 3D3V_AUX_S5 Thermal Sensor CPU TOP L1 S L2 32 EMC2103


    Original     		PDF ICS9LPRS365B 4CQ01 08266-SA TPS51125 EMC2103 RT8202 667/800/1066MHz PCIex16 WPCE773LA0DG TPS51125 Atheros AR8131 WISTRON power sequence RT8202 Realtek ALC269Q High Definition Audio NDS0610-NL-GP X-14D31818M-35GP Wistron Corporation winbond wpce773la0dg

    QM75DY-24

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM7 5 DY-2 4 • Ic • V c ex • hFE Collector current. 75A Collector-emitter voltage. 1200V DC current gain. 75


    OCR Scan     		PDF QM75DY-24 E80276 E80271 QM75DY-24

    30N03

    Abstract: marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SPB30N03 SPP30N03 SMD transistor 2x sot 23 smd code book B3
    Text: SPP 30N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance ^ D S o n • Avalanche rated Continuous drain current b V 30 0.023 a A 30 • dy/df rated


    OCR Scan     		PDF SPP30N03 P-T0220-3-1 Q67040-S4736-A2 SPB30N03 P-T0263-3-2 Q67040-S4736-A3 VPT05I64 fiS35bG5 D133777 SQT-89 30N03 marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SMD transistor 2x sot 23 smd code book B3

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dy/d? rated • Low on-resistance • t7 5 °C operating temperature Pin 1 Pin 2 Pin 3 • also in TO-220 SMD available Type BUZ 101L Vds


    OCR Scan     		PDF O-220 C67078-S1355-A2 fl235bD5 00fl455E

    FT 3528

    Abstract: SAA7350 3528 20 PINS TDA1547 g2g 573 3528 pins 20
    Text: Philips S em iconductora Linear P roducts Prelim inary specification Dual top-performance bitstream DAC TDA1547 FEATURES • Top-grade audio performance * very low harmonic distortion - high signal-to-noise ratio - w ide dy n a m ic ran ge of approxim ately 108 dB not


    OCR Scan     		PDF TDA1547 TDA1547 711002b GG7t1170 711DflSb 0D7T171 FT 3528 SAA7350 3528 20 PINS g2g 573 3528 pins 20

    BB3581

    Abstract: HIGH-VOLTAGE OPERATIONAL AMPLIFIER
    Text: T EL E DY N E COMPONENTS 3bE D 0^17bQ2 00Q7bH2 4 «TSC WTELEDYNE COMPONENTS 1481 OPERATIONAL AMPLIFIER — HIGH-VOLTAGE FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The 1481 is a high-voltage operational amplifier capable of operating with supply voltages as high as +75V or as low


    OCR Scan     		PDF 17bQ2 00Q7bH2 BB3581 HIGH-VOLTAGE OPERATIONAL AMPLIFIER

    Untitled

    Abstract: No abstract text available
    Text: BOUMAR/UHITE TECHNOLOGY T o dY J ISbBfaTfl 0DG005D 4 T -58-11-13 m C u s t o m D e v i c e s , la t e . Applications The 2802 positive voltage regulator, and the 2803 negative voltage regulator are designed to power analog or d ig ita l circu its. H y b r iid F C ir c a itl


    OCR Scan     		PDF 0DG005D 200mA 10/if IN4019

    tone Dialer

    Abstract: ba20 transistor lr48202
    Text: SHARP EL EK / MELEC D IV 1SE o | a ific n n a a c m w P u ls e /T o n e D ia le r LSI LR 48202 LR48202 • / -Dy-Ö-? - Pulse/Tone Dialer LSI D e s crip tio n Pin Connections The LR48202 is a CMOS pulse/tone dialer LSI poviding auto-dialing and redialing. It features a builtin 32-digit X 20 or 16-digit X 40 one-touch or twotouch memory and 32-digit redial memory.


    OCR Scan     		PDF lfi07ia LR48202 LR48202 32-digit 16-digitX40 32DX20 16DX40 tone Dialer ba20 transistor

    0P279

    Abstract: TI OP279 CP279 najog
    Text: AN A LO G D E V IC E S Rail-toRail high Output Current Operational Anplifier 0P279 F U N C T IO N A L B L O C K D IA G R A M FEATURES R a il-to -R a il In p u ts a n d O u t p u t s 8 - L ea d N a rr o w B o dy 8 - L ead P la s tic D IP H ig h O u tp u t C u rr e n t: ± 8 0 m A


    OCR Scan     		PDF 0P279 OP279 0P279 TI OP279 CP279 najog

    185t2

    Abstract: bdy28 BF 184 184T2 BDY26 BDY27 185T2A 185T2B
    Text: * B D Y 2 6 183 T2 *B D Y 2 7 184 12 *B D Y 28 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM , MESA DIFFUSES ^ Preferred device Dispositif recommandé LF large signal power amplification 180 V 200 V BDY 26 , 183 T2 BDY 27 , 184 T2


    OCR Scan     		PDF BDY26 BDY27 87-5W_ CB-19 185t2 bdy28 BF 184 184T2 185T2A 185T2B

    2N 3055

    Abstract: 2N3055 ESM434 BDX 71 2N5294 2N6109 2N6111 ESM435 ESM142 84132N
    Text: N PN Power transistors « Homobase » L l: amplifier and switching » Transistors de puissance « Homobase » Amplification et commutation BF Case f*tot m * B oîtie r O ui _ Compì. > Type C (A ^21E m in max A / (A) Tease 25 C / v CEsat iv i y 'B (A )


    OCR Scan     		PDF TPu75 2N5294 2N6111 2N6109 2N 3055 2N3055 ESM434 BDX 71 ESM435 ESM142 84132N

    2N6155

    Abstract: 2N67 2N6756 2N6156 D-05N md-141 2N6755
    Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 60V -100V rDs on = 0.18 fi and 0.25 fl Features: • SO A is p o w e r-d is s ip a tio n lim ite d


    OCR Scan     		PDF 2N6755, 2N6756 0V-100V 2N6755 2N6756 150cC 2N6155 2N67 2N6156 D-05N md-141